N MOSFET 50V 400A Search Results

SFS9530

Abstract: T0-220F
Contextual Info: SFS9530 Advanced Power MOSFET FEATURES bvdss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.3Q lD = - 8 A ■ 175°C Operating Temperature ■ Extended Safe Operating Area

SFS9630

Abstract: mosfet v0 MC160 d859
Contextual Info: SFS9630 A dvanced Power MOSFET FEATURES BVdss = -200 V • ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.8 Q lD = -4.4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 ^A (Max.) @ VOS= -200V

a2724

Contextual Info: Advanced Power MOSFET S F W /I9 6 3 4 FEATURES B V dss = - 2 5 0 V • Avalanche Rugged Technology ^DS on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ VOS = -250V

Contextual Info: SFP9630 Advanced Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 jiA Max. @ VDS= -200V

Contextual Info: SFS9634 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B V dss = -2 5 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 JA (Max. @ VDS= -250V

SFS9634

Abstract: p-channel 250V power mosfet DIODE D3S 90 Power MOSFET P-Channel 250V 50A d3s diode
Contextual Info: SFS9634 Advanced Power MOSFET FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA Max. @ VDS= -250V

Contextual Info: IRFS140A Advanced Power MOSFET FEATURES b vdss • ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 1751C Operating Temperature Lower Leakage Current : 10 MA Max. @ VOS=100V

SFR 136

Abstract: diode SFR-136
Contextual Info: SFR/U9230 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -5.4 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 fiA (Max.) @ VDS = -200V

Contextual Info: IRL540 A d van ced Power MOSFET FEATURES B V DSS - 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 5 8 Î2 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 100V

SFP9634

Contextual Info: SFP9634 Advanced Power MOSFET FEATURES BVdss = -250 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 |iA Max. @ VOS = -250V

SECI resistor

Abstract: resistor seci
Contextual Info: Advanced Power MOSFET IR F P 1 4 0 A FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175t: Operating Temperature ■ Lower Leakage Current : 10 p A Max. @

IRL540A

Contextual Info: IRL540A A dvanced Power MOSFET FEATURES B V DSS — 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 5 8 Î2 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V

IRL540A

Contextual Info: IRL540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ H BVdss = 100 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS = 100V

IRL540

Contextual Info: IRL540 A dvanced Power MOSFET FEATURES B V DSS — 100 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 5 8 Î2 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS= 1 0 0 V

SF100CB100

Abstract: fast recovery diode trr Pt mosfet 4805
Contextual Info: MOSFET MODULE SF100CB100 UL;E76102 （M） SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode（trr≦300ns）reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for

diode SFR-136

Abstract: SFR 136 diode sfr 136
Contextual Info: SFR/U9230 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = -5.4 A ■ ■ ■ Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ VDS = -200V

Contextual Info: IRLW/I540A A d van ced Power MOSFET FEATURES B VDSS = 1 0 0 V ♦ Avalanche Rugged Technology ^D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 0 .0 5 8 Î2 In = 2 8 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK

Contextual Info: IRLW/I540A A d vanced Power MOSFET FEATURES BVDSS — 100 V ♦ Avalanche Rugged Technology 0.058Î2 ♦ Rugged Gate Oxide Technology ^ D S o n = ♦ Lower Input Capacitance lD = 28 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature

U9130

Abstract: diode 98A G39A
Contextual Info: SFR/U9130 Advanced Power MOSFET FEATURES BVqss = "100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 0 -3 ß ■ Lower Input Capacitance lD = -9.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = -100V

Contextual Info: IRLW/I540A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ b v dss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175°C Operating Temperature Lower Leakage Current : 10 HA Max. @ VDS= 100V

Contextual Info: SFP9630 A d va n ce d Power MOSFET FEATURES BVdss = -200 V • ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : -10 nA Max. @ ■

Power MOSFET SFP9634

Abstract: sfp9634 Power MOSFET P-Channel 250V 50A
Contextual Info: SFP9634 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10|iA Max. @ VDS= -250V

Contextual Info: PD - 91778A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-204AA/AE IRH7250SE 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRH7250SE Radiation Level RDS(on) 100K Rads (Si) 0.10Ω ID 26A International Rectifier’s RADHardTM HEXFET® MOSFET

IRHF7430SE

Abstract: JANSR2N7464T2 400V to 12V DC Regulator 500V 25A Mosfet
Contextual Info: PD - 91863C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-39 IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77Ω ID QPL Part Number