3B32T Search Results

Contextual Info: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature

mosfet vn 10

Abstract: IRFZ24A bvn mosfet 0050II
Contextual Info: IRFZ24A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BV dss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* «Operating Temperature Lower Leakage Current : 10 uA Max. @ VOS= 60V

Contextual Info: SSP3N80A A d v a n c e d Power MOSFET FEATURES B ^ dss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower-Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 800V

Contextual Info: SIEMENS SFH 234 S SILICON FOUR-QUADRANT PHOTODIODE Package Dimensions in Inches mm | |.141 (0.3)| A] Chip Location 012 (.3) max Common ~ . Cathode GrJd .018* 002 (0 45*0.05) 1 A Anode B - - 0 I g | .570* 039 (14.5*1.0)' .118±.008 I (3.0*0 2) .141 Anode \

Contextual Info: SSP4N60AS A d va n ce d Power MOSFET FEATURES B V DS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ V os = 600V

SSP45N20A

Abstract: pj 53 diode
Contextual Info: SSP45N20A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 35 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 200V