N CHANNEL POWER TRENCH MOSFET Search Results

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

FDMC8878/MAX498CWI-T-datasheet

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of advanced Power Trench Fairchild Semiconductor‘s process. It has been optimized for power management

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

3006S

Abstract: 10-6327-01
Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

Contextual Info: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®

Contextual Info: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features General Description „ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FDMC8554 N-Channel Power Trench MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS on = 5mΩ at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14m: Features tm General Description „ Max rDS on = 14m: at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced Power Trench process. It has been optimized for power management

10.7A

Contextual Info: FDD5353 N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

10.7A

Abstract: FDD5353
Contextual Info: FDD5353 tm N-Channel Power Trench MOSFET 60V, 50A, 12.3mΩ Features General Description „ Max rDS on = 12.3mΩ at VGS = 10V, ID = 10.7A „ 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

Contextual Info: FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 60 A, 2.3 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

Contextual Info: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 60 A, 3.1 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package

FDMC8878

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mΩ Features tm General Description „ Max rDS on = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

FDMC8854

Contextual Info: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features tm General Description „ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

Contextual Info: FDMC8854 N-Channel Power Trench MOSFET 30V, 15A, 5.7mΩ Features tm General Description ̈ Max rDS on = 5.7mΩ at VGS = 10V, ID = 15A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

FDMC8878

Contextual Info: FDMC8878 N-Channel Power Trench MOSFET 30V, 16.5A, 14mΩ Features tm General Description „ Max rDS on = 14mΩ at VGS = 10V, ID = 9.6A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management

FDMC86102Z

Abstract: FDMC86102LZ
Contextual Info: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT65N03 Preliminary Power MOSFET 65 Amps, 30 Volts, 3.7mΩ N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT65N03 is a N-channel Trench technology using UTC’s advanced Trench technology to provide customers with a minimum on-state resistance, low gate charge and superior

Contextual Info: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process

FDMS86200

Contextual Info: Preliminary Datasheet FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m: Features General Description „ Max rDS on = 18 m: at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

Contextual Info: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has