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    FDMC86106LZ Search Results

    FDMC86106LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC86106LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 3.3A POWER33 Original PDF 7
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    FDMC86106LZ Price and Stock

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    FLIP ELECTRONICS FDMC86106LZ

    MOSFET N-CH 100V 3.3A POWER33
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    DigiKey FDMC86106LZ Reel 1,500
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    onsemi FDMC86106LZ-L701

    FET 100V 103.0 MOHM MLP33
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    DigiKey FDMC86106LZ-L701 Reel
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    Avnet Americas FDMC86106LZ-L701 Reel 3,000
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    onsemi FDMC86106LZ

    Trans MOSFET N-CH 100V 3.3A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC86106LZ)
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    Avnet Americas FDMC86106LZ Reel 11 Weeks 3,000
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    Verical () FDMC86106LZ 3,263 494
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    FDMC86106LZ 720 494
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    Rochester Electronics FDMC86106LZ 4,221 1
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    Avnet Asia FDMC86106LZ 3,000
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    EBV Elektronik FDMC86106LZ 12 Weeks 3,000
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    Flip Electronics FDMC86106LZ 159,000
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    onsemi FDMC86106LZ-P

    FDMC86106LZ-P
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    Verical FDMC86106LZ-P 56,805 443
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    Rochester Electronics FDMC86106LZ-P 297,832 1
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    Fairchild Semiconductor Corporation FDMC86106LZ

    MOSFET N-CH 100V 3.3A POWER33
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    Rochester Electronics FDMC86106LZ 3 1
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    Win Source Electronics FDMC86106LZ 18,000
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    FDMC86106LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process


    Original     		FDMC86106LZ PDF

    Contextual Info: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process


    Original     		FDMC86106LZ PDF

    Contextual Info: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDMC86106LZ PDF

    FDMC86106LZ

    Abstract: FDMC86106Z
    Contextual Info: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description „ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDMC86106LZ FDMC86106LZ FDMC86106Z PDF