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    FDMC86102LZ Search Results

    FDMC86102LZ Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC86102LZ
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7A 8MLP Original PDF 7
    SF Impression Pixel

    FDMC86102LZ Price and Stock

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    onsemi FDMC86102LZ-P

    LMV INDUSTRIAL CLOUD FET
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    DigiKey FDMC86102LZ-P Tape & Reel
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    Rochester Electronics FDMC86102LZ-P 866 1
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    onsemi FDMC86102LZ

    N-Channel Shielded Gate Power Trench? MOSFET 100V, 22A, 24mO - Tape and Reel (Alt: FDMC86102LZ)
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    Avnet Americas () FDMC86102LZ Tape & Reel 2,174
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    FDMC86102LZ Tape & Reel 65 Weeks 3,000
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    Mouser Electronics FDMC86102LZ 9,677
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    Newark () FDMC86102LZ Tape & Reel 9,396 100
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    FDMC86102LZ Cut Tape 9,396 1
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    FDMC86102LZ Tape & Reel 3,000
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    Future Electronics FDMC86102LZ Reel 22 Weeks 3,000
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    Onlinecomponents.com FDMC86102LZ
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    Bristol Electronics FDMC86102LZ 100 1
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    Quest Components () FDMC86102LZ 272
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    FDMC86102LZ 80
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    Rochester Electronics FDMC86102LZ 1,825 1
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    TME FDMC86102LZ 3,000
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    Avnet Asia FDMC86102LZ 65 Weeks 3,000
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    Fairchild Semiconductor Corporation FDMC86102LZ

    MOSFET N-CH 100V 7A 8MLP
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    Win Source Electronics FDMC86102LZ 13,269
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    FDMC86102LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMC86102Z

    Abstract: FDMC86102LZ
    Contextual Info: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original
    FDMC86102LZ FDMC86102LZ FDMC86102Z PDF

    Contextual Info: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original
    FDMC86102LZ PDF

    Contextual Info: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original
    FDMC86102LZ PDF

    FDMC86102L

    Contextual Info: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original
    FDMC86102LZ FDMC86102L PDF

    FDMC86102L

    Contextual Info: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original
    FDMC86102LZ FDMC86102L PDF