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    FDMC86102LZ Search Results

    FDMC86102LZ Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMC86102LZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 7A 8MLP Original PDF 7
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    FDMC86102LZ Price and Stock

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    onsemi FDMC86102LZ

    MOSFET N-CH 100V 7A/18A 8MLP
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    DigiKey () FDMC86102LZ Cut Tape 2,920 1
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    FDMC86102LZ Digi-Reel 2,920 1
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    Avnet Americas () FDMC86102LZ Reel 15,000 16 Weeks 3,000
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    FDMC86102LZ Reel 2,174
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    Mouser Electronics FDMC86102LZ 18,136
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    Verical () FDMC86102LZ 12,000 3,000
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    FDMC86102LZ Cut Strips 1,186 16 Weeks 1
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    Newark () FDMC86102LZ Cut Tape 25 1
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    FDMC86102LZ Reel 3,000
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    Onlinecomponents.com FDMC86102LZ
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    Bristol Electronics FDMC86102LZ 100 4
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    Quest Components () FDMC86102LZ 272
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    TME FDMC86102LZ 3,000 3,000
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    Richardson RFPD FDMC86102LZ 3,000
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    Avnet Asia FDMC86102LZ 20 16 Weeks 3,000
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    EBV Elektronik FDMC86102LZ 18 Weeks 3,000
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    onsemi FDMC86102LZ-P

    FDMC86102LZ - N-Channel Shielded Gate Power Trench MOSFET
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    Rochester Electronics FDMC86102LZ-P 866 1
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    Fairchild Semiconductor Corporation FDMC86102LZ

    Transistors
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    Vyrian FDMC86102LZ 7,928
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    Win Source Electronics FDMC86102LZ 13,334
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    FDMC86102LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDMC86102Z

    Abstract: FDMC86102LZ
    Contextual Info: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDMC86102LZ FDMC86102LZ FDMC86102Z PDF

    Contextual Info: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original     		FDMC86102LZ PDF

    Contextual Info: FDMC86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 24 mΩ Features General Description ̈ Max rDS on = 24 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process


    Original     		FDMC86102LZ PDF

    FDMC86102L

    Contextual Info: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original     		FDMC86102LZ FDMC86102L PDF

    FDMC86102L

    Contextual Info: FDMC86102LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 22 A, 24 mΩ Features General Description „ Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has


    Original     		FDMC86102LZ FDMC86102L PDF