N CHANNEL MOSFET 12W Search Results

3020 transistor

Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

mosfet vgs 5v

Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET shd220213
Contextual Info: SENSITRON SEMICONDUCTOR SHD220213 TECHNICAL DATA DATA SHEET 4139, REV - HERMETIC POWER MOSFET N-CHANNEL LOGIC LEVEL FEATURES: œ 55 Volt, 0.06 Ohm MOSFET œ Hermetically Sealed œ Add a “C” to the part number for ceramic seals SHDC220213 œ Surface Mount Package

5V GATE TO SOURCE VOLTAGE MOSFET

Abstract: mosfet 221
Contextual Info: SENSITRON SEMICONDUCTOR SHD220213 TECHNICAL DATA DATA SHEET 4139, REV - HERMETIC POWER MOSFET N-CHANNEL LOGIC LEVEL FEATURES: œ 55 Volt, 0.06 Ohm MOSFET œ Hermetically Sealed œ Add a “C” to the part number for ceramic seals SHDC220213 œ Surface Mount Package

IRF130

Abstract: N Channel Mosfet 12W SHD217302A SHD217302
Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

SHD217302

Contextual Info: SENSITRON SEMICONDUCTOR SHD217302A TECHNICAL DATA DATA SHEET 317, REV - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 100 Volt, 0.16 Ohm, 14A MOSFET œ Fast Switching œ Low RDS on œ Equivalent to IRF130 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

BQ25A

Abstract: BQ-25a bq24725A BQ25A TI Texas Instruments BQ25A 14 pin ic ROHM ELECTRONICS SIS412DN BQ24725ARGRT bq24725ARGRR 65W ac adapter schematic
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

transistor v2w

Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240
Contextual Info: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor

bq24725

Abstract: BQ25A
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

BQ25A

Abstract: BQ-25a BQ25A TI Texas Instruments BQ25A
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

BQ25A

Abstract: BQ-25a 14 pin ic ROHM ELECTRONICS BQ25A TI Texas Instruments BQ25A SIS412DN bq24725ARGRR bq24725A BQ24725ARGRT terminal end plate AP 1.5
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

BQ25A

Abstract: BQ-25a BQ25A TI 14 pin ic ROHM ELECTRONICS bq24725ARGRR Texas Instruments BQ25A bq24725A Sis412DN 90W circuit Notebook Power Adapter BQ24725ARGRT
Contextual Info: bq24725A SLUSAL0 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector and Advanced Circuit Protection Check for Samples: bq24725A FEATURES DESCRIPTION • The bq24725A is a high-efficiency, synchronous

BQ735

Abstract: bQ73 bq24735 SIS412DN
Contextual Info: bq24735 SLUSAK9 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous

BQ735

Abstract: bq24735RGRR Sis412DN bQ73 BAT54 BAT54A BAT54C BSS138W FDS6680A PDS1040
Contextual Info: bq24735 SLUSAK9 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous

BQ735

Abstract: bQ73
Contextual Info: bq24735 SLUSAK9 – SEPTEMBER 2011 www.ti.com 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous

n-channel 12p

Contextual Info: STBP112 Overvoltage protection device Datasheet - production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 165 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A

STBP112

Abstract: STBP112DV
Contextual Info: STBP112 Overvoltage protection device Datasheet − preliminary data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A

Contextual Info: STBP112 Overvoltage protection device Datasheet − preliminary data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 170 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A

n-channel 12p

Contextual Info: STBP112 Overvoltage protection device Datasheet − production data Features • Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch - low RDS on of 165 mΩ ■ Integrated charge pump ■ Maximum continuous current of 2 A

BQ735

Contextual Info: bq24735 www.ti.com SLUSAK9A – SEPTEMBER 2011 – REVISED JANUARY 2013 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous

BQ735

Contextual Info: bq24735 www.ti.com SLUSAK9A – SEPTEMBER 2011 – REVISED JANUARY 2013 1-4 Cell Li+ Battery SMBus Charge Controller for Supporting Turbo Boost Mode with N-Channel Power MOSFET Selector Check for Samples: bq24735 FEATURES DESCRIPTION • The bq24735 is a high-efficiency, synchronous

F1840

Abstract: Cree Microwave cree rf UPF2012 UPF2012-178 UPF2012F UPF2012P package type 440109
Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

Contextual Info: UPF2012 12W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.

40af

Abstract: VN67AF vn40af VN89AF vn89af80v
Contextual Info: D f f l r ä D IL VN40AF, VN67AF, VN89AF n-Channel Enhancem ent-m ode Vertical Power MOSFET FEATURES APPLICATIONS • High speed, high current switching • Switching power supplies • Current sharing capability when paralleled • DC to DC inverters • Directly interface to CMOS, DTL, TTL logic