N CHANNEL FET TO92 Search Results

2n5555 Vgs(off)

Abstract: 2N5555 CS 150 10v
Contextual Info: 2N5555 ♦I N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RA T I N G S Tfl=25°C unless otherwise noted

2SK291

Contextual Info: HITACHI 2SK291-SILICON N-CHANNEL JUNCTION FET LOW FREQUENCY LOW NOISE AMPLIFIER n _ Î j_ !. IXuii 2 StHJTli 3 C*tc ia tr/n JEDEC TO-92) MAXIMUM CHANNEL POWER DISSIPATION CURVE • ABSOLUTE MAXIMUM RATINGS {T&=25#C) Tieni Symbol 2SK29I

Contextual Info: bbSBTSl Q0175S3 4 N AMER PHILIPS/DISCRETE 55E D BSJ111 BSJ112 BSJ113 JV N-CHANNEL SILICO N FIELD -EFFECT T R A N SIST O R S Symmetrical silicon n-channel junction FET s in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.

sd403

Abstract: CD11G
Contextual Info: High Speed DMOS N-Channel Switch caioqic CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).

2N3819 junction fet

Abstract: transistor 2N3819 2N3O19 2N3819 fet 2n3819 transistor VGD25 200UA 2N3819 VDS1
Contextual Info: centrai 2N3 819 *1 Central Semiconductor Corp. central semiconductor Corp. N-CHANNEL SILICON JUNCTION FET JEDEC TO-92 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2 N 3819 type is a Silicon N-Channel Junction Field

Contextual Info: IRFNL210B N-Channel B-FET 200 V, 1.0 A, 1.5 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

Contextual Info: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).

1N45B

Contextual Info: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

40822

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement

SD403CY

Abstract: SD403 SD403BD XSD403 high speed TTL in fet
Contextual Info: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).

LN1E

Abstract: Marking code mps
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

transistor marking code 12W SOT-23

Abstract: 12w marking code sot 23 12w SOT 23 package marking code marking 12W SOT23 12W MARKING sot23 fet sot-89 marking code SOT MARKING 213 LN1E 12w marking code of transistor sot 23 Marking code 12w SOT-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

LN1E

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

BF245

Abstract: transistor BF245 Fet BF245 BF245 TRANSISTOR FET TO-92
Contextual Info: G U M O M te tr, DESCRIPTION BF245 is N-Channel Junction Effect Transistor designed VHF/UHF amplifiers and mixer. CRO BF245 N-CHANNEL JUNCTION FET TO-92 Field for GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage Gate-Source Voltage

transistor BF245

Abstract: fet BF245 BF245 transistor BF245 A BF245 TRANSISTOR transistor gds "igss 5 na"
Contextual Info: BF245 N-CHANNEL JUNCTION FET DESCRIPTION TO-92 BF245 is N-Channel Junction Field Effect Transistor designed for V HF/U H F amplifiers and m ixer. GDS ABSOLUTE MAXIMUM RATINGS Drain-Source Voltage VDS 30V Drain-Gate Voltage VDG 30V Gate-Source Voltage VGS 30V

2SK168

Abstract: VUME
Contextual Info: HITACHI 2SK168-SILICON N-CHANNEL JUNCTION FET VHF AMPLIFIER. MIXER, LOCAL OSCILLATOR 1 I 1 _ 1 1 . 1 1 l _ } IVixn. in rrirn JEDEC TO-92) • ABSOLUTE MAXIMUM RATINGS (Ta-25*C) [tern Symbol MAXIMUM CHANNEL POWER DISSIPATION CURVE

Contextual Info: 4ÔE D SD403 CAL06IC CORP 1044322 GGGG2S1 4 m C G C • calocft High Speed DMOS N-Channel Switch CORPORATION V ^P35- Z £ SD403 DESCRIPTION FEATURES • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance,

Contextual Info: 3VD223600NEYL 3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE DESCRIPTION Ø 3VD223600NEYL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø ESD improved capability Ø

K596 b 01

Abstract: K596
Contextual Info: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information

K596

Abstract: K596 b 01 STK596M CAPACITOR MICROPHONE
Contextual Info: STK596M Semiconductor N-Channel Junction FET Description • Capacitor Microphone application Features • Especially suited for use in audio, telephone capacitor microphones • Excellent voltage characteristic • Excellent transient characteristic Ordering Information

2SK546

Contextual Info: Ordering number: EN 1790B N 0.179 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage

ZVN0117TA

Abstract: t50c
Contextual Info: Not Recommended for New Design Please Use ZVNL120A N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN0117TA ISSUE 1 – APRIL 94 FEATURES * 170 Volt BVDS APPLICATIONS * Telephone handsets D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

2SK546

Contextual Info: Ordering number: EN 1790B N 0 .I79 OB 2SK 546 N-Channel Junction Silicon FET Impedance Converter Applications Applications - Impedance conversion • Infrared sensor Features • Low IGSS “ Small ^*iss Absolute Maximum Ratings at Ta=25°C Drain to Source Voltage