N 344 AB Search Results

1598BB

Contextual Info: 2 Bottom View of Assembly A 1 Front Face SECTION A-A Side View Inside Assembly Top Cover n11.69 n 8.74 [.460] (Bottom Boss n) 120.00 [4.724] 179.00 [7.047] Detail View of Boss [.344] (Top Boss n) (Located on Top and Bottom Cover) 5.25 [.207] 120.00 [4.724]

Contextual Info: b b 53 331 Philips Semiconductors 0 0 32 3 2 3 344 WMA P X Product specification CATV amplifier module BGD601 • i " — N AUER PHILIPS/DISCRETE PINNING-SOT115C FEATURES DESCRIPTION PIN • Excellent linearity PIN CONFIGURATION input • Extremely low noise

BFQ268

Contextual Info: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with

Contextual Info: SANYO SEMICONDUCTOR CORP S3E D • 7 T ì7 G 7 b QGlQbGG 344 » T S A J 7 - 7 7 - 0 *? 1 Ordering number: EN >£3932 _ CMOS LSI _ LC7073, LC7073M No. n 3932 S A \y o Error Detection and Correction LSIs for RDS Demodulators

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSBTBl DD2fib03 344 H A P X ESM4045A V ESM4045D(V) ; v SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended for use in motor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

Contextual Info: 44^505 2SK1774 0D13541 344 • H I T M HITACHI/ OPTOELECTRONICS blE D Silicon N Channel MOS FET Application High speed power switching TO-3P*FM Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC

Contextual Info: MA J O R L E A G U E E L E C T R O N I C S 2mm .079" c.l. Socket Strips - Straight Mates with: TSHS, TSHR, TSHC, BSTS, BSTC, TSHCR, TSHSM, BSTCM n U H igh Temp. | 1Pins per row Singles Doubles Lead Style Options "L"ength "T"ail (8,74) .344 (9,09) ,358 (10,54). 415

2SK68

Abstract: 2SK1774 2SK684 10MAVgs
Contextual Info: 4M^b20S 2SK1774 0 0 1 3 5 4^ 344 • H I T 4 HITACHI/COPTOELECTRONICS tiE I Silicon N Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC

UPL2000

Abstract: trompeter pin upl2000 CABLE BELDEN hec 2
Contextual Info: DASH NO CABLE ACCOMMODATED -Dl COMM/SCOPE BELDEN -D2 GEPCO VPM2000 -D4 B E L D E N 16 9 4 A GEPCO VSD200I BELDEN BELDEN -DIO -Dll -DI3 9209 BELDEN 8281 BELDEN .344 TA 1-226 F59 .290 7732A .403 2285 NETWORKS 0 .6/3.7 - D 19 BELDEN I855A .213 BELDEN I505F .255

74LS126

Abstract: TTL 74ls126
Contextual Info: SANYO S E M I C O N D U C T O R CO RP L.3E ]> • 7 tm G 7 b GQlllfl? 344 « T S A J O rdering nu m b er: E N 3 9 1 4 MLC74HC126A No.3914 CMOS High-Speed Standard Logic SA\YO i Quad 3-State N oninverting Buffer Features • The MLC74HC126A consists of 4 identical noninverting buffers with 3-state outputs.

rectifier ds3

Contextual Info: International m 4flSS4S2 0015274 344 —inr pd-9.856 lk»riRectifier IRFIBF30G H EX FET P o w e r M O S F E T • • • • • IN T E R N A T IONAL Isolated Package High Voltage lsolation= 2.5KV R M S Sink to Lead Creepage Dist.= 4.8mm Dynam ic dv/dt Rating

Contextual Info: HEWLETT-PACKARD/ CMPNTS LIE D 4447SÛ4 DDGfl74B 344 IHPA HERMETIC, NUMERIC AND HEXADECIMAL DISPLAYS FOR MILITARY APPLICATIONS HEW LETT PACKARD m HIGH EFFICIENCY RED Low P o w e r High B rightness YELLOW High P e rfo rm a n c e GREEN H D S P -0 78X /07 8X T X V /078 X T X V B

SCR 2N1599

Abstract: specifications 2N1597 SCR 2N1595 2N1595-99 SCR GE C5u scr c108 scr C203 c106b1 scr GE C106B1 SCR C103
Contextual Info: C 103 C203 - 2 N 50 6 0-64 30-200 3 0 400 ?5 400 05 0.8 0 .3 2 * 85 C 0.50 @ 25’ C tlllS lIlt 0 50 @ 2 5 3C- 1.0 < 85° C C3 GE TYPE 2 N 8 7 7 -8 1 "1 JEDEC C5 2N 2322-29 C6 07 - 2N 2 344-48 25-400 25-200 - C106 C107 C 108 - - - 50 4 00 15-600 1 *« K .

scr C106

Abstract: C106Y1 equivalent equivalent SCR c106 c106b1 equivalent SCR C106Y1 SCR TRIGGER circuit dc charger ge c106b1 c106 scr SCR C203 SCR 406J
Contextual Info: C 103 C203 - 2 N 50 6 0-64 30-200 3 0 400 ?5 400 05 0.8 0 .3 2 * 85 C 0.50 @ 25’ C tlllS lIlt 0 50 @ 2 5 3C- 1.0 < 85° C C3 GE TYPE 2 N 8 7 7 -8 1 "1 JEDEC C5 2N 2322-29 C6 07 - 2N 2 344-48 25-400 25-200 - C106 C107 C 108 - - - 50 4 00 15-600 1 *« K .

150GD128D

Contextual Info: SKiM 150GD128D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (78 12 : !"    . */ !64" 0(

varistor mdc z301

Abstract: varistor mdc z151 Varistor MDC Z321 mdc z151 mdc z301 MDC Z131 MDC Z131 20 UL mdc z271 varistor NS 332 Varistor MDC Z681
Contextual Info: Maida Development Company 20 Libby Street • P.O. Box 3529 • Hampton, Virginia 23663 Telephone 757 723-0785 • FAX (757) 722-1194 www: maida.com • e-mail: maidadev@maida.com Large Metal Oxide Surge Absorbers with Tab Leads Series: D78 (32mm), D75 (40mm), D77 (53mm)

cd 332 m

Abstract: varistor NS 332 594 BC varistor 300 v 595 BC varistor 250 v 595 BC varistor 295 v 595 BC varistor 595 BC varistor varistor 332 420 v 595 BC varistor ns 332 varistor
Contextual Info: Metal Oxide Varistors Bussmann 3 2 Series to 5 3 Series - Large MOV’s W ith Tabs F o r A p p lic a tio n s In S e c o n d a ry S u rg e A rre s to rs Bussmann’s metal oxide surge absorbers are larger diameter versions of the conventional metal oxide varistor

200GD128D

Abstract: SKiM200GD128D semikron skim
Contextual Info: SKiM 200GD128D Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (89 12 ; !"    . */ !64" 0(  . 3  ?>        1 SKIM 4  . */ 0(       $ % %89  . */ !64" 0(  . 3  %9  . 34 @  >@ ; . 3/4 0(

Contextual Info: SK50GARL065 # * +, -.        Absolute Maximum Ratings Symbol Conditions IGBT /0 #1 * +, - $ #1 * 5+, - $9:  344 / ,6 7 # * 84 - 64 7 5+4 7 ; +4 / #1 * 5+, - 54 @ # * +, - +, 7 # * 84 - 5B 7 $9:* +  $ SEMITOP 2 / * <44 /= /%0 > +4 /=

skim200gd128d

Contextual Info: SKiM 200GD128D Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (8 12 ; !"    . */ !64" 0(  . */ !64" 0(  . 3  ?>        1 SKIM 4  . */ 0(       $ Values Units 3*44 374 !3,/" ,94 !*64" : *4

Contextual Info: SKiM 200GD128D power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (89 12 ; !"    . */ !64" 0(

SKIM600GD126DLM

Contextual Info: SKiM 600GD126DLM .  * +, -.      Absolute Maximum Ratings Symbol Conditions IGBT /0 1 * -  1 * 3,4 - :; Trench IGBT modules SKiM 600GD126DLM / * ?44 /> /0 B +4 /> /0( C 3+44 / 3+44 / ,+6   5 * 74 - 893 :; * +<"=;> /*?44/

Contextual Info: SK60GB125 % , -. /        Absolute Maximum Ratings Symbol Conditions IGBT 0+ %1 , -. / & %1 , 3-. / &89 IGBT Module SK60GB125  3-44 ( .3 5 % , 64 / 7. 5 344 5 : -4 ( %1 , 3-. / 34 ? % , -. / .@ 5 % , 64 / 76 5 &89, -  &

SKiM250GD128D

Abstract: 250GD128D
Contextual Info: SKiM 250GD128D Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (9: 12 < !"    . */ !64" 0(  . 3  ?>        1 SKIM 4  . */ 0(       $ % %9:  . */ !64" 0(  . 3  %:  . 34 @  >@ < . 3/4 0(