MX29LV Search Results

mx29lv320ttc

Abstract: MX29LV320T Q0-Q15 SA10
Contextual Info: MX29LV320T/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

MX29LV401T

Abstract: SA10
Contextual Info: ADVANCED INFORMATION MX29LV401T/B 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8/262,144 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

MX29LV160CBTC-90

Abstract: 29LV160C MX29LV160C MX29LV160B MX29LV160CT SA10 SA11 SA12 SA13
Contextual Info: MX29LV160C T/B 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection - Hardware method to disable any combination of

Contextual Info: MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation • Fast access time: 55R/70/90ns

MX29LV400

Abstract: mx29LV160cbtc-70g MX29LV800C MX29LV160C MX29LV160CBTI-70G mx29lv160d MX29LV800CBTC-90G MX29LV800CTTC-70 MX29LV160CTTC-70G
Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B MX29LV400C T/B, MX29LV800C T/B, MX29LV160C T/B DATASHEET The MX29LV160C T/B product family has been discontinued. The MX29LV160C T/B product family is not recommended for new designs. The MX29LV160D T/B family is the

MX29LV640D

Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
Contextual Info: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales

MX29LV640ebt

Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
Contextual Info: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

MX29LV033

Contextual Info: ADVANCED INFORMATION MX29LV033A 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention

29LV800

Abstract: TSOP 48 Pattern
Contextual Info: PRELIMINARY MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

EN29LV160BB

Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com

MX29LV040C

Abstract: MX29LV040CT2I-70G MX29LV040CTC-70G MX29LV040CQI-70G MX29LV040CQC-55Q architecture in 4289 MX29LV040 MX29LV040CQI-55Q MX29LV040CTI-70G 555H
Contextual Info: MX29LV040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • • • • • • • • • • • • • • • Extended single - supply voltage range 2.7V to 3.6V 524,288 x 8 only Single power supply operation - 3.0V only operation for read, erase and program operation

MX29LV320DT

Abstract: MX29LV320DB MX29LV320DBTI-70G MX29LV320DBTI MX29LV320DTTI-70G MX29LV320D 29LV320 3F000Fh mx29lv320dbxbi-70g MX29LV320DTTI
Contextual Info: MX29LV320D T/B MX29LV320D T/B DATASHEET P/N:PM1281 REV. 1.2, OCT. 02, 2009 1 MX29LV320D T/B Contents FEATURES. 5

PM1076

Abstract: A0-A21 MX29LV640B Q0-Q15 MX29LV640BTTC-90G
Contextual Info: MX29LV640B T/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

MX29LV004T

Abstract: SA10
Contextual Info: PRELIMINARY MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 • Single power supply operation - 3.0V only operation for read, erase and program operation

PM1076

Abstract: MX29LV640BTTC-90G MX29LV640B 29LV640 A0-A21 Q0-Q15
Contextual Info: MX29LV640B T/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

Contextual Info: MX29LV160T/B, MX29LV161T/B FEATURES 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 2,097,152 x 8/1,048,576 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

Contextual Info: MX29LV640B T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable

Contextual Info: PRELIMINARY MX29LV800CT/CB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY and erase operation completion. • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection

Contextual Info: PRELIMINARY MX29LV008CT/CB 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8 • Single power supply operation - 3.0V only operation for read, erase and program

Contextual Info: R MX29LV320AT/B 32M-BIT [4M x 8 / 2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10 years data retention

Contextual Info: MX29LV040C 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 524,288 x 8 only • Single power supply operation - 3.0V only operation for read, erase and program operation

Contextual Info: MX29LV400C T/B MX29LV800C T/B MX29LV160C T/B SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Byte/Word mode switchable: - 524,288 x8 / 262,144 x16 MX29LV400C - 1,048,576 x8 / 524,288 x16 (MX29LV800C) - 2,097,152 x8 / 1,048,576 x16 (MX29LV160C)

29LV800-70R

Contextual Info: ADVANCE INFORMATION MX29LV800T/B 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program

mx29lv320db

Contextual Info: MX29LV320D T/B MX29LV320D T/B DATASHEET P/N:PM1281 REV. 1.0, AUG. 14, 2008 1 MX29LV320D T/B Contents FEATURES . 5