| 99716
Abstract: 95579 
Contextual Info: MwT-1789HL DC-4 GHz Packaged FET Preliminary Data Sheet June 2005 Features Ideal for DC –4000 MHz High Linearity / High Dynamic Range Applications Excellent RF Performance: 46 dBm IP3 70 dBc ACPR 28 dBm P1dB 14 dB SSG @ 2000 MHz MTTF > 100 years @ channel temperature 150ºC
 | Original
 | MwT-1789HL 
OT-89
MwT-1789
MwT-1789HL
cdma2000,
stations56
99716
95579 | PDF | 
| ap910401
Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10 
Contextual Info: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology
 | Original
 | MGA-444940-02 
ap910401
mmic code h5
MWT-PH15
WPS44
MMA-054025-Q3
MWT-10
mps080817nxx
445122
MGA-242740-02
MMA-343737-Q10 | PDF | 
| MPS 808
Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820 
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical
 | Original
 |  | PDF | 
| MPS 808
Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator 
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical
 | Original
 |  | PDF | 
| MwT-1789HL
Abstract: wimax 99716 T1789 
Contextual Info: MwT-1789HL DC-4 GHz Packaged FET Data Sheet June 2006 Features: • • • • Ideal for DC – 4 GHz High Linearity / High Dynamic Range Applications Excellent RF Performance: o 45 dBm IP3 o 70 dBc ACPR o 28 dBm P1dB o 14 dB SSG @ 2000 MHz MTTF > 100 years @ channel temperature 150ºC
 | Original
 | MwT-1789HL 
OT-89
MwT-1789HL
cdma2000,
LA804 
wimax
99716
T1789 | PDF | 
| mps 0940
Abstract: WPS-252717-82 WPS-495917-02 
Contextual Info: Linear Amplifier Solutions Typical RF Performance Freq WPS-252717-82 WPS-252724-02 WPS-252724-99 MPS-343717-82 MPS-343617-82 MPS-363817-82 WPS-343722-02 WPS-343724-99 WPS-343724-02 WPS-495917-02 WPS-495922-02 MWT-1789HL MWT-1789LN*  Ghz  (dB) Ga P-1dB (dBm)
 | Original
 | WPS-252717-82 
WPS-252724-02 
WPS-252724-99 
MPS-343717-82 
MPS-343617-82 
MPS-363817-82 
WPS-343722-02 
WPS-343724-99 
WPS-343724-02 
WPS-495917-02 
mps 0940
WPS-252717-82
WPS-495917-02 | PDF | 
| 7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
 | Original
 | MS-013
10-Pin
5M-1994 
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2 | PDF | 
| MwT1789HL
Abstract: solar schematic 
Contextual Info: Application Notes MwT-1789HL DC-4 GHz Packaged FET June 2005 Application Circuit Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency Typical Data MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss
 | Original
 | MwT-1789HL 
200mA,
wT-1789 
MwT1789HL
solar schematic | PDF | 
| T1789
Abstract: FET application note 3435G 
Contextual Info: MwT-1789HL DC-4 GHz Packaged FET Application Note June 2006 Application Circuit: Typical RF Performance bias at Vds=6.5V, Ids=200mA, Ta=25 °C Parameter Units Test Frequency MHz 870-960 1930-1990 2400-2600 3400-3500 Gain dB 18 14 11 10 Input Return Loss dB
 | Original
 | MwT-1789HL 
200mA,
wT-1789 
OT-89
T1789
FET application note
3435G | PDF |