MWT10 Search Results

Contextual Info: MwT-102G XTH m 2-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY B • » m 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 7.0 dB TYPICAL SMALL SIGNAL GAIN 1.9:1 TYPICAL VSWR 16 dBm TYPICAL P1dB ±0.75 dB TYPICAL OUTPUT POWER FLATNESS SINGLE SUPPLY BIAS

Contextual Info: MI CR O W A V E T E C H N O L O G Y bhE D • b l E M l G G Q D 0 D E T 2 bSl ■ H R W V MwT-10 GN / SN / LN 40 GHz Low Noise GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT

Contextual Info: bbE D MI CR O W A V E T E C H N O L O G Y b l E U l G D DDDD3Dfl AMT IMRU V MwT-101 2-8 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 30 dB TYPICAL REVERSE ISOLATION • *0.6 dB TYPICAL OUTPUT POWER FLATNESS

Contextual Info: MwT-101G U&kM 2-8GHZ MMIC AMPLIFIER MODULE 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 MICROWAVE TECHNOLOGY Ï DJ] i Tl •14 dB TYPICAL GAIN • 1.5:1 TYPICAL INPUT AND OUTPUT VSWR • 30 dB TYPICAL REVERSE ISOLATION • ±0.6 dB TYPICAL OUTPUT POWER FLATNESS

Contextual Info: M w T -1 0 G N / S N / LN 40 GHz Low Noise GaAs FET DEVICE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 FEATURES • 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT • 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT • 0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: 2-8 GHz MMIC AMPLIFIER CHIP M ic r o W a v e • 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 Tech no lo g y -¡MICROWAVE TECHNOLOGY 37E D b l 2 4 1 Q0 0 Q0 D0 Ö0 T IMRÙJV • 35 dB TYPICAL REVERSE ISOLATION •+0.5 dB TYPICAL OUTPUT POWER FLATNESS

Contextual Info: MwT-102G 2-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY • 7.0 dBTYPICALSMALL SIGNAL GAIN •1.9:1 TYPICAL VSWR •1 6 dBm TYPICAL P1dB • d0.75 dB TYPICAL OUTPUT POWER FLATNESS •SINGLE SUPPLY BIAS • CENTER FEED CONFIGURATION • IDEAL FOR LIMITING AMPLIFIER APPUCATIONS

Contextual Info: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP M / Î 7 MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat

dg471

Contextual Info: w. g MICROWAVE TEC H NO LO G Y HYBRID MIC MODULES 4 2 6 8 SolarWay Fremont, CA 9 4 5 3 8 5 1 0 -6 5 1 -6 7 0 0 F A X 5 1 0 -6 5 1 -2 2 0 8 FEATURES • Low Cost, Miniature Blocks for Drop-In Hybrid Applications • Defense and Commercial Low Noise and Power Applications

ap910401

Abstract: mmic code h5 MWT-PH15 WPS44 MMA-054025-Q3 MWT-10 mps080817nxx 445122 MGA-242740-02 MMA-343737-Q10
Contextual Info: New Products in 2010 New Linear GaN Amplifiers • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at 4.4 to 4.9 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical • Flexible Customization for other Frequency Bands using Hybrid Technology

MPS 808

Abstract: MWT-PH15 WPS-445122-XX mmic code h5 MPS 806 transistor MwT-10 ap910401 GaN amplifier MMA-022028-S7 mps 0820
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

Contextual Info: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP M ic r o W a v e T e c h n o l o g y MICROWAVE 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 3 7E biamcm D ? godgoôm Tm r ? v ~ " • 30 dB TYPICAL REVERSE ISOLATION • ±0.5 dB TYPICAL OUTPUT POWER FLATNESS

Contextual Info: MwT -0208-101DG/TC 2.0-8.0 GHz, SELF TEMPERATURE COMPENSATING MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 426 8 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C JUl 3TTB •H Jn UU • 25 dB SMALL SIGNAL GAIN • 1.0 dB GAIN VARIATION, -54°C TO +95°C

AX5101

Contextual Info: PRODUCT SELECTION GUIDE M ic r o w a v e GALUUM ARSENIDE FIELD EFFECT TRANSISTORS 100 MHz TO 40 GHz tec h no lo g y ABOUT MwT MwT is located in the heart of California’s Silicon Valley in 3 0 ,0 0 0 square feet of m odern fa c ilitie s d e d ic a te d to the

Contextual Info: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP M ß k U L MICROWAVE TECHNOLOGY 4268 solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat

MPS 808

Abstract: MwT-10 252724 445122 MwT-h17 MIL-PRF38535 Power Amplifier MMIC 2.6 GHz 0218-H4N2 .H2 sot89 solar voltage regulator
Contextual Info: New Products in 2009 New Linear GaN Amplifiers for WiMax Applications • High Linear Output with OFDM Signals: +33 dBm at 2.5% EVM • Fully Matched to 50 ohm impedance at Typical WiMax Frequency Bands: 2.5, 3.5, and 5.5 GHz • High Output Power at 3 dB Gain Compression Point: 40 dBm Typical

Contextual Info: niCROül A VE TECHNOLOGY bbE D • blBMlDD □ □ DD 3 T5 EMI « M R I i l V MwT-102G 2-18 GHz MMIC AMPLIFIER MODULE MICROWAVE TECHNOLOGY 7.0 dB TYPICAL SMALL SIGNAL GAIN 1.9:1 TYPICAL VSWR 16 dBm TYPICAL P1dB ±0.75 dB TYPICAL OUTPUT POWER FLATNESS SINGLE SUPPLY BIAS

MwT-10

Contextual Info: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL/GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz

Contextual Info: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBe TYPICAL SECOND HARMONICS AT Psat

Contextual Info: MwT-101 2-8 GHz MMIC AMPLIFIER CHIP MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 30 dB TYPICAL REVERSE ISOLATION • 40.6 dB TYPICAL OUTPUT POWER FLATNESS • 3 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Quality System

Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4
Contextual Info: MMIC Amplifiers ƒƒHigh Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies ƒƒHigh Linearity, Fully Matched WiMax Power Amplifiers ƒƒMilitary Screening Available on Hermetically Sealed Package Products ƒƒLow Cost Commercial Products

Contextual Info: MwT-101G 2-8GHZ MMIC AMPLIFIER MODULE MICRO WA VE TEC HNOLOG Y 4268 Solar W ay Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 14 dB TYPICALGAIN • 1.5:1 TYPICAL INPUT AND OUTPUT VSWR • 30 dB TYPICAL REVERSE ISOLATION • d0.6 dB TYPICAL OUTPUT POWER FLATNESS

Contextual Info: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz