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    TIM1213-8

    Contextual Info: TOSHIBA TIM1213-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    Original
    TIM1213-8 2-11C1B) MW50240196 TIM1213-8 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan
    TIM1213-8 2-11C1A) MW50250196 TCH725G G2231S TDT7250 TIM1213-8L PDF

    MW5024

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - G1dB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


    OCR Scan
    TIM1213-8 MW50240196 MW5024 PDF