TDT7250 Search Results

2N3789

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ- Ü b ï>Ëf| L O T T E S O □□OflDEb 9097250 TOSHIBA <DISCRETE/OPTO SILICON PNP TRIPLE DIFFUSED TYPE_ POWER AMPLIFIER, SWITCHING CIRCUIT AND REGULATOR Unit in mm APPLICATIONS. 60MAX. 2*81.0 MAX FEATURES: -h . High Gain and Excellent h^E Linearity:

Contextual Info: TIM5964-4A FEATURES: • HIGH POWER PldB = 36.5 dBm at 5.9 GHz to 6.4 GHz ■ BROAD BAND INTERNALLY MATCHED ■ HIGH GAIN GidB = 8.5 dB at 5.9 GHz to 6.4 GHz ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 25V CHARACTERISTICS Output Power

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 39.5 dBm at 12.7 GHz to 13.2 GHz • High gain - ldB = 5.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package

2sd 2901

Abstract: low noise HEMT 2sd 311
Contextual Info: Low Noise HEMT Chip Form JS8901-AS FEATURES: ULTRA LOW NOISE FIGURE I.O d B a tf = 12 GHz 1.3 dB a tf = 18 GHz • 0.3 ¿tm GATE LENGTH SUPER HIGH ASSOCIATED GAIN 11 dB at f = 12 GHz 9 d B a t f = 18 GHz CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 13 dB at f = 12 GHz

TLP321GB

Abstract: TLP321 TI OBH marking marking gB diode TLP3211
Contextual Info: GaAs IRED S PHOTO-TRANSISTOR T L P 3 2 1 PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA TLP321, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP321-2 offers two isolated channels in an eight lead plastic

Contextual Info: TOSHIBA TLRD125 LED Lamp GaAIAs Red Light Emission Panel Circuit Indicator 3.1mm Diameter T1 • GaAIAs Red LED • All Plastic Mold Type • Colorless Transparent Lens • Low Drive Current, High Intensity Red Light Emission - Recommended Forward Current: ¿ = 15 - 20 mA (DC)