MW MARK Search Results

SOT23 MARK Y2

Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)

1N52438

Abstract: LN5261 motorola 1N759 1n750 motorola MMBZ5234 1N5533B JANTX lN5254 B2X84C11 MLL4691 MLL4699
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)

UV LED 310 nm

Abstract: ENFIS UNO Air Cooled Light 400X MW288 LM LED driver led light engine fan pc
Contextual Info: ENFIS UNO AIR COOLED LIGHT ENGINE ENFIS UPTO 36W POWER CAPABILITY The European Power of Ingenuity Typical Array Light Output Levels* Wavelengths nm 375 310 mW 410 4680 mW 465 4680 mW / 252 Lumens 520 1980 mW / 792 Lumens 595 770 mW / 360 Lumens 630 1760 mW / 288 Lumens

ams SOT23

Contextual Info: I n ter n a tio n a l MMBZ5226 thru S e m ic o n d u c to r , I n c . MMBZ5262 350 mW SURFACE MOUNT ZENER DIODES THERMAL C HA RA CTERISTICS f' Characteri sti c Symbol Max Uni t 225 mW 1.30 mW/ °C R oja 556 °C/mW Pq 300 mW 2. 40 mW/ °C 417 °C/mW Po Total Devi ce Dissi pati on Mounted on

GFM 51A

Abstract: GFM 16A 921 6v8a GFK 13A CASE 403A GFM 22A gfx 56a mrc 444 gfx 75A GFM 15A
Contextual Info: TVS — in Surface Mount Table 10. Surface Mount Packages − 0.225 Watt Nominal Zener Breakdown Voltage 225 mW Energy Rated SOT−23 225 mW Energy Rated SOT−23 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 Case 318

mu diode

Abstract: Hitachi DSA00100 ECN3064 ECN3064SP ECN3064SPR ECN3064SPV Hitachi motor driver
Contextual Info: ECN3064 4. Electrical Characteristics Ta=25 °C Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. Items 1 Standby Current 2 3 Output device FVD 4 Symbols IS ICC VFT Terminal VS1,VS2 VCC MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV,

2148 static ram

Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads

MMBD6050LT1

Abstract: MMBD6050LT1G MMBD6050LT3 MMBD6050LT3G 5A SOT23-3
Contextual Info: MMBD6050LT1 Switching Diode Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit 225 1.8 mW mW/°C 556 °C/W 300 2.4 mW mW/°C RqJA

MMBD2835LT1

Abstract: MMBD2836LT1
Contextual Info: ON Semiconductort MMBD2835LT1 MMBD2836LT1 Monolithic Dual Switching Diodes MAXIMUM RATINGS EACH DIODE Rating Reverse Voltage Symbol Value Unit VR 35 75 Vdc IF 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W

am2101

Abstract: AM9101 256x4 static ram
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW

AM9112

Abstract: am91l12
Contextual Info: Am9112 2 56 x4 Static RAM ZU 6U JV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise imm unity — full 400 mV Uniform switching characteristics — access times insen­

Am2101

Abstract: AM9101 2101 256x4 L01A amd 9101 256x4 static ram ram 256 256x4 Am2101-2 AM9101CPC
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW

9112C

Abstract: AM9112 91L12A AM91L12A P2112A maxim 2112
Contextual Info: Am9112 2 5 6 x 4 Static RAM ZL16UIV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen­

am9101

Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads

BAW56TT1

Abstract: SMD310
Contextual Info: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current

MMBD6050LT1

Contextual Info: ON Semiconductort Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg

MMBD6050LT1

Contextual Info: ON Semiconductort Switching Diode MMBD6050LT1 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg

BAV70

Abstract: BAV70TT1 SMD310
Contextual Info: BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current

AM9112

Abstract: ram 2112 256x4 static ram AM91L12 AM9112APC
Contextual Info: Am9112 Am9112 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access times insen­

Contextual Info: BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current

pc2101

Abstract: 91L01
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads

mmbd6050lt1

Contextual Info: ON Semiconductort Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg

Contextual Info: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current

AM9112

Abstract: ram 2112 RAM 2112 256 word AM9112APC
Contextual Info: Am9112 Am9112 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen­