MW MARK Search Results

SOT23 MARK Y2

Abstract: BZXB4C10 MARK Y6 Transistor SOT23 MARK Y3 1N5239B equivalent BZXB4C4V7 MMBPU131 glass zener diodes motorola 1n746 B2X84C 1N756A
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)

1N52438

Abstract: LN5261 motorola 1N759 1n750 motorola MMBZ5234 1N5533B JANTX lN5254 B2X84C11 MLL4691 MLL4699
Contextual Info: Nominal Zener Voltage 'Note 1 250 mW 250 mW 250 mW 250 mW 350 mW Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Mark Low Level Cathode = Polarity Mark Low Noise Cathode = Polarity Marik Cathode = Polarity Mark (‘ Notes 2.3,14) ('Notes 2,3,18) (•Notes 2,3,18)

GFM 51A

Abstract: GFM 16A 921 6v8a GFK 13A CASE 403A GFM 22A gfx 56a mrc 444 gfx 75A GFM 15A
Contextual Info: TVS — in Surface Mount Table 10. Surface Mount Packages − 0.225 Watt Nominal Zener Breakdown Voltage 225 mW Energy Rated SOT−23 225 mW Energy Rated SOT−23 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 500 mW Energy Rated SOD−123 Case 318

mu diode

Abstract: Hitachi DSA00100 ECN3064 ECN3064SP ECN3064SPR ECN3064SPV Hitachi motor driver
Contextual Info: ECN3064 4. Electrical Characteristics Ta=25 °C Unless otherwise specified, VCC=15V, VS=325V Suffix T; Top arm No. Items 1 Standby Current 2 3 Output device FVD 4 Symbols IS ICC VFT Terminal VS1,VS2 VCC MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV, MW MU,MV,

2148 static ram

Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads

AM9112

Abstract: am91l12
Contextual Info: Am9112 2 56 x4 Static RAM ZU 6U JV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise imm unity — full 400 mV Uniform switching characteristics — access times insen­

Am2101

Abstract: AM9101 2101 256x4 L01A amd 9101 256x4 static ram ram 256 256x4 Am2101-2 AM9101CPC
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power • High output drive — two full TTL loads 290 mW maximum— standardpower• High noise immunity — full 400 mV 175 mW

9112C

Abstract: AM9112 91L12A AM91L12A P2112A maxim 2112
Contextual Info: Am9112 2 5 6 x 4 Static RAM ZL16UIV DISTINCTIVE CHARACTERISTICS Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access tim es insen­

am9101

Abstract: 91l01 am91l01 9101C Am9101/91L01/2101
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating 125 mW typ.; 100 mW typ.; Logic voltage power 290 mW maximum — standardpower 175 mW maximum — low power levels identical to TTL • • • • High output drive — two full TTL loads

Contextual Info: BAW56TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current

AM9112

Abstract: ram 2112 256x4 static ram AM91L12 AM9112APC
Contextual Info: Am9112 Am9112 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS • • • Low operating power dissipation 125 mW typ.; 290 mW maximum — standard power 100 mW typ.; 175 mW maximum — low power High noise immunity — full 400 mV Uniform switching characteristics — access times insen­

Contextual Info: BAV70TT1 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit 225 mW 1.8 mW/°C 555 °C/W 360 mW 2.9 mW/°C Peak Forward Surge Current

pc2101

Abstract: 91L01
Contextual Info: Am9101 Family Am9101 Family 2 5 6 x 4 Static RAM DISTINCTIVE CHARACTERISTICS Low operating power 125 mW typ.; 290 mW maximum — standardpower 100 mW typ.; 175 mW maximum — low power Logic voltage levels identical to TTL • • • • High output drive — two full TTL loads

mmbd6050lt1

Contextual Info: ON Semiconductort Switching Diode MMBD6050LT1 3 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg

Contextual Info: MOTOROLA Order this document by BAL99LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAL99LT1 ANODE 3 O CATHODE O 2 MAXIMUM RATINGS Rating Symbol Value Unit Vr 70 Vdc if 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R o ja 556 °C/W Pd 300 mW 2.4 mW/°C

Contextual Info: Am99C88/Am99CL88 8 Kx 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access times 70/100/120/150 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max. Standby: 550 /jW Max.

1N5988B

Abstract: 1N6006B 1N5994B 1N5995B 1N5993B 1N6020B 1N5996B
Contextual Info: TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Note 1 Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤75°C, Lead Length = 3/8” PD 500 mW 4.0 mW/°C -65 to +200 °C Derate Above 75°C

DS_61022_EN_TXS

Abstract: relay 6v
Contextual Info: TX-S Very High Sensitivity, 50 mW nominal operating Relay with LT style pin layout FEATURES 1. Nominal operating power: High sensitivity of 50 mW By using the highly efficient polar magnetic circuit “seesaw balance mechanism”, a nominal operating power of 50 mW (minimum operating

1N5221B

Abstract: 1N5256B zener 6A ZENER DIODES 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5281B DO-204AH
Contextual Info: TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Note 1 Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤75°C, Lead Length = 3/8” PD 500 mW 4.0 mW/°C -65 to +200 °C Derate Above 75°C

DM marking code

Abstract: MM1Z4717 MM1Z4678 MM1Z4681
Contextual Info: MM1Z4678~MM1Z4717 Zener Voltage Regulators 500 mW SOD-123 Surface Mount Absolute Maximum Ratings Tj = 25℃ Parameter Total Power Dissipation FR-5 Board at TL=75℃ Symbol Value Unit PD 500 mW 6.7 mW/℃ Derated Above 75℃ Thermal Resistance Junction to Ambient

79C2V4

Abstract: BZX79C3V9
Contextual Info: TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Note 1 Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤75°C, Lead Length = 3/8” PD 500 mW 4.0 mW/°C -65 to +200 °C Derate Above 75°C

MARKING 182 DO-35 zener diode

Contextual Info: TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Note 1 Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤75°C, Lead Length = 3/8” PD 500 mW 4.0 mW/°C -65 to +200 °C Derate Above 75°C

CY marking code

Abstract: DM marking code MM1Z4717 marking bf sod-123
Contextual Info: MM1Z4678~MM1Z4717 Zener Voltage Regulators 500 mW SOD-123 Surface Mount Absolute Maximum Ratings Tj = 25℃ Parameter Total Power Dissipation FR-5 Board at TL=75℃ Symbol Value Unit PD 500 mW 6.7 mW/℃ Derated Above 75℃ Thermal Resistance Junction to Ambient

55c12 zener diode

Abstract: 55c15 zener diode 55c12 diode 55C15 Diode 55C2V4 55C4V3 55C6V2 55C3V0 55c3v9
Contextual Info: TAK CHEONG 500 mW DO-35 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Note 1 Rating Symbol Value Unit Maximum Steady State Power Dissipation @ TL ≤75°C, Lead Length = 3/8” PD 500 mW 4.0 mW/°C -65 to +200 °C Derate Above 75°C