MW 1616 Search Results

MAZ8068-H

Abstract: MAZ3000 MAZ8000 MAZ8024 MAZ8027 MAZ8027-H MAZ8027-L MAZ8030 MAZ8030-H MAZ8030-L
Contextual Info: Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply A • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Repetitive peak forward current IFRM 200 mA Total power dissipation* Ptot 150 mW Junction temperature

2n3019 equivalent

Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
Contextual Info: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE

ACAS 0606 AT

Contextual Info: ACAS 0606 AT, ACAS 0612 AT - Precision Vishay Beyschlag Precision Thin Film Chip Resistor Array Superior Moisture Resistivity FEATURES • Superior moisture resistivity, |ΔR/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per resistor

ACAS 0606 AT

Contextual Info: ACAS 0606 AT, ACAS 0612 AT - Precision Vishay Beyschlag Precision Thin Film Chip Resistor Array Superior Moisture Resistivity FEATURES • Superior moisture resistivity, |ΔR/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per resistor

110R

Abstract: 220R ACAS 0606 AT
Contextual Info: ACAS 0606 AT, ACAS 0612 AT - Precision Vishay Beyschlag Precision Thin Film Chip Resistor Array Superior Moisture Resistivity FEATURES • Superior moisture resistivity, |ΔR/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per resistor

dsp16a block diagram

Abstract: DSP16A PDA30 DSP1616 T9682 t86a WE DSP16A DB10 AT&T DSP1610
Contextual Info: Data Sheet September 1995 RT DSP1616-x11 Digital Signal Processor 1 Features Optimized for digital cellular applications with a bit manipulation unit for higher signal coding efficiency 38 ns and 33 ns instruction cycle Low power consumption: <15.0 mW/MIPS typical at 5 V

MC ATAU - Precision

Abstract: ACAS 0606 AT
Contextual Info: ACAS 0606 ATAU - Precision www.vishay.com Vishay Beyschlag Precision Thin Film Chip Resistor Array for Conductive Gluing FEATURES • Gold terminations for conductive gluing • Superior moisture resistivity, |R/R| < 0.5 % 85 °C; 85 % RH; 1000 h • Rated dissipation P70 up to 125 mW per

Contextual Info: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating

ST ARM CORE 1825 0255

Abstract: 55132-2 REV H
Contextual Info: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating

transistor fcs 9012

Contextual Info: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex®-A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating

Contextual Info: AT91SAM ARM-based Embedded MPU SAMA5D3 Series PRELIMINARY DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating

EQUIVALENT TRANSISTOR bc109c

Abstract: TRANSISTOR pnp BC140 TRANSISTOR BC140 BC140 equivalent TRANSISTOR BC141 2N1026 EQUIVALENT TRANSISTOR bc108 bcy59 equivalent bcy31 BC177 pnp transistor
Contextual Info: Discrete Devices Transistors Cont. Low Level Amplifiers Maxim um Ratings Type Polarity Pd Ambient mW Electrical Characteristics @ 25° C VCB VCE V e b Volts Volts Volts V c E (S a t) @ Ic / lß H p E *C Min/Max mA Volts m A/m A ft MHz Min NF@f Cob pF

Contextual Info: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3

4x0603

Contextual Info: V i shay I n tertech n o l o g y, I n c . ACAS 0 6 0 6 AT a nd ACAS 0 612 AT Pre cision Se r ie s Key Benefits • Two or four resistor values on one substrate • Superior moisture resistivity: < 0.5 % 85 °C; 85 % RH; 56 days • High power rating: P70 = 125 mW per resistor

J FET AM LNA

Contextual Info: A fr i Coming Attractions m an A M P com pany 250 mW Power Amplifier with T/R and Diversity Switches 2.4 - 2.5 GHz AM55-0003 Features SSOP-28 • H ighly In te g ra te d P o w e r A m plifier W ith T /R a n d D iversity S w itches _ +.0025 .0275 . 0025 • O p e ra te s O v e r 2.7 V to 6 V S u p p ly Voltage

1616A

Contextual Info: 1616A 1310 nm DOCSIS 3.1 DFB Laser Module PRELIMINARY DATASHEET | JULY 2014 FIBER OPTICS The 1616A 1310 nm DOCSIS 3.1 DFB laser module is designed for both broadcast and narrowcast analog applications. The 1616A laser module is compliant with the new DOCSIS 3.1 standard, supporting operational bandwidth

Contextual Info: 1616A 1310 nm DOCSIS 3.1 DFB Laser Module PRELIMINARY DATASHEET | MAY 2014 FIBER OPTICS The 1616A 1310 nm DOCSIS 3.1 DFB laser module is designed for both broadcast and narrowcast analog applications. The 1616A laser module is compliant with the new DOCSIS 3.1 standard, supporting operational bandwidth

Contextual Info: M X -1616, M X -818 □ M n E L FEATURES • • « • • 800 Nanoseconds settling time Programmable input mode Break-before-make switching Dielectrically isolated CMOS TTL/CMOS-compatible High-Speed CMOS Analog Multiplexers MECHANICAL DIMENSIONS INCHES MM

M51W

Contextual Info: HM51W16165 Series HM51W18165 Series 16 M EDO DRAM 1-Mword x 16-bit 4 k Refresh/1 k Refresh HITACHI ADE-203-650D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM 51W 16165 Series, HM 51W 18165 Series are CM OS dynam ic RAMs organized as 1,048,576-word X 16-bit. They employ the m ost advanced CMOS technology for high performance and

mx618

Contextual Info: M X-1616, M X-818 High-Speed CMOS Analog M ultiplexers FEATURES • • • • 800 Nanoseconds settlin g tim e Program m able Input m ode B reak-before-m ake sw itching D ielectrically isolated CMOS LS • TTL/CMOS-compatible GENERAL DESCRIPTION The MX-1616 and MX-818 are high-speed,

NEC 4216160

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ /¡¿ P D 42S 16160, 4216160, 42S 18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description T h e /1 P D 4 2 S 1 6 1 6 0 ,4 21 6160, 4 2 S 1 8 1 6 0 ,4 2 1 8 1 6 0 a re 1,048, 576 w o rds by 16 b its C M O S d y n a m ic RA M s. T he

msm5116165a

Contextual Info: O K I Semiconductor MSM5 1 16165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116165A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 16160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

BG40

Abstract: LC99452
Contextual Info: Ordering number : ENN*6298 _ LC99452 ¡SAHYOI 2M pixel 2/3-inch Progressive Scan CCD Image Sensor with Square Pixel Preliminary Features • Very high resolution: 1616 x 1296 H x V pixels. progressive scan • 2/3 inch image area: 8.24mm x 6.61mm. Image diagonal