MV21 Search Results

30yW

Abstract: 2114L MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3 UPD444
Contextual Info: MV21SC14 A PLESSEY ADVANCE INFORMATION S e m ic o n d u c t o r s . CMOS Advance inform ation is issued to advise Customers of new additions to the Plessey S em iconductors range which, nevertheless, s till have ‘pre-production’ status. Details given may, therefore, change w ithout notice although we w ould expect th is performance data to

MV2112

Contextual Info: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207

MV2105

Abstract: MMBV2108LT1G
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features High Q Values for Higher Frequency Performance Constant Gamma Design Low Reverse Current Available as Chip or Packaged Diodes Available in Chip-on-Board Packaging Custom Designs Available

850C

Abstract: C7JC
Contextual Info: MV21O L Vvc + [– r I p-q-+” SEATING PLANE 1 3- 11111 K STYLE 1. PIN1. ANUUt 2. CATHODE DIM A A.A MI LLIMETERSI MIN I MAX 4.45 MAX 4.70 0.175 0.185 0.41 0.48 0.016 0.019 J 2.29 1270 2.79 – 0.090 0.500 0.110 - K CASE +radema,k of M~~orola ~MOTOROLA

2114L

Abstract: MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3
Contextual Info: # 8 ü i l S S S ^ 2 , 0 CMOS çt/. 003698 ? - V MV21SC14 1024 x 4 BIT STATIC RAM T he MV21SC14 is a h ig h speed, lo w pow e r 4096-bit Static R andom Access M em ory, organised as1024 w ord s b y 4-bits and fabricated w ith th e IS O -C M O S process. It is a fu lly static

MV21005

Abstract: gaas varactor diodes Tuning Varactors MV20000
Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features ● High Q Values for Higher Frequency Performance ● Constant Gamma Design ● Low Reverse Current ● Available as Chip or Packaged Diodes ● Available in Chip-on-Board Packaging ●

LV2205

Abstract: LV2209 MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MV2101 MV2105 MV2109 MERIT INCH
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

MMBV2104

Abstract: TO-236-AA TO-236AA mv2110 diode MV2213 MV2102 MMBV2102 MV2201 MV2110 MV2205
Contextual Info: 6367255 MOTOROLA S C <OI ODES/ OPTO> 89D 7 7 4 5 2 General Purpose Abrupt Junction Tuning Diodes continued 30 Volts ' CASE 318-02 (TO-236AA) Style 8 t . h, 6.8 * - , i - Device Type 450 MV2101 2.5 450 \ • 10 f - • 12 2.5 400 MV2103 2.5 400

MV212D-22JC

Contextual Info: Vector Modulator, 2100 to 2200 MHz Package Style 22 MV212D-22JC with independent phase/attenuation control Key Features • • • • Low Loss: 1.4 dB Phase Shift: 100° Attenuation: 17 dB IP3: 40 dBm Guaranteed Specifications Insertion Loss (dB) TYP 1.4

ram 2114L

Abstract: 2114L UPD444 cn plessey CM09 MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3
Contextual Info: MV21SC14 A PLESSEY w Sem iconductors. OVIOS ADVANCE INFORMATION Advance information is issued to advise Customers of new additions to the Plessey Semiconductors range which, nevertheless, still have ‘pre-production’ status. Details given may, therefore, change without notice although we would expect this performance data to

Contextual Info: Tuning and Switching Diodes Tuning Diodes − Abrupt Junction CT @ VR = 4.0 V, 1.0 MHz VR Volts Device pF Min pF Nominal pF Max Cap Ratio Min Q@4 4.0 0V 50 MHz Typ MV2101 30 6.1 6.8 7.5 2.5 450 MV2105 30 13.5 15 16.5 2.5 400 MV2109 30 29.7 33 36.3 2.5 200

mv2105

Abstract: marking code 4h diode
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209 Silicon Tuning Diodes 6.8–100 pF, 30 Volts Voltage Variable Capacitance Diodes http://onsemi.com These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general

Contextual Info: Vector Modulator, 2070-2190 MHz Package Style 35 MV212A-35Q with independent phase/attenuation control Key Features • • • • Low Loss: 2.5 dB TYP Phase Shift: 200° minimum Attenuation: 20 dB minimum IP3: +42 dBm TYP, +40 dBm MIN Guaranteed Specifications

V2205

Abstract: MV2201 MV2213 MV2215 V2103 V2105
Contextual Info: K n o x S e m ic o n d u c t o r , in c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 -M V 2115 MV2201 - MV2215 TYPE NU M BER CAPACITANCE @ - 4 Vdc 1 M H z pF MIN Q U A LITY FACTOR Q @ - 4 Vdc f = 50 M Hz CA PA C ITA N C E RATIO C-2V / C-30V MIN MV2101

Contextual Info: Vector Modulator, 2100-2200 MHz Package Style 70 MV212A-70TK with independent phase/attenuation control Key Features • • • • Low Loss: 3 dB TYP Phase Shift: 390° Attenuation: 22 dB IP3: +42 dBm TYP, +40 dBm MIN Guaranteed Specifications Insertion Loss (dB)

SOT23 MARKING code 4W

Abstract: MV2109 MMBV2105L 65t marking diode mv2105 sot-23 297 marking marking 297 sot-23 marking code 4h diode SOT23 65T MMBV2109LT1 equivalent
Contextual Info: MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209 Preferred Device Silicon Tuning Diodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solid−state

MV2107

Abstract: BV2108 MV2113 BV-2108
Contextual Info: MOTOROLA SEMICONDUCTOR MMBV2101L thru MMBV2109L MV2101 thru MV2115 TECHNICAL DATA W V O L T A G E -V A R IA B L E C A PA C ITA N C E D IO D ES C 6.8-100 pF 30 VOLTS SILIC O N EPIC A P D IO D ES % C A S E 318-07 TO-236AB SOT-23 MMBV2101L thru MMBV2109L C A SE 182-02

MV2115 TO-92

Abstract: mv2115
Contextual Info: Abrupt Tuning Varactor MV2115 Series DESCRIPTION The MV2115 abrupt tuning varactor provides an extremely high Q and low series resistance. It is packaged in the TO-92 package. Features • TO-92 High Q Maximum Ratings Rating Limits Units VBR V Operating Temperature, TOPR

gaas varactor diodes

Abstract: MV2101 MV21004 MV20001
Contextual Info: GaAs Varactor Diodes Abrupt Junction TM MV20001 – MV21010 Features ● High Q Values for Higher Frequency Performance ● Constant Gamma Design ● Low Reverse Current ● Available as Chip or Packaged Diodes ● Available in Chip-on-Board Packaging ●

MV2110

Abstract: MV2109 positive lead dioda bridge MV2112 DIODE CQ MV2101 MV2102 MV2103 MV2107 mv2110 diode
Contextual Info: MV2101 SILICON thru MV2115 v v c - W IV O LTA G E -V A R IA B LE CAPACITANCE DIODES 6 .8 -1 0 0 p F 30 V O L T S SILICON EPICAP DIODES . . . designed in the popular P L A S T IC P A C K A G E for high volume requirements of FM Radio and T V tuning and A F C , general frequency

MV2213

Abstract: MV2201 MV2112 TO-92
Contextual Info: 6367255 MOTOROLA SC <OIODES/OPTO> 89D 77452 General Purpose Abrupt Junction Tuning Diodes continued _ , s* High Volume * W S& m l- i . V. " ; CASE 318-02 5v V •):r, ■•■;.• /.- t o -236 a a ' -CASE 182-02 5 2-Lead TO-92 2.5 450 2.5 400 MV2103

MV212A-35TB

Contextual Info: Vector Modulator, 2100-2200 MHz Package Style 35 MV212A-35TB with independent phase/attenuation control Key Features • • • • Low Loss: 2.5 dB TYP Phase Shift: 200° minimum Attenuation: 20 dB minimum IP3: +42 dBm TYP, +40 dBm MIN Guaranteed Specifications

Contextual Info: ^ ^ S m te o n d u c to r * 003698 OVIQS a,VoA MV21SC14 1024 x 4 BIT STATIC R A M The MV21SC14 is a high speed, low power 4096-bit Static Random Access Memory, organised as1024 words by 4-bits and fabricated with the ISO -CM O S process. It is a fully static