MTY16N80E Search Results
MTY16N80E Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MTY16N80E |
|
TMOS E-FET Power Field Effect Transistor | Original | 243.44KB | 8 | ||
| MTY16N80E |
|
Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| MTY16N80E/D |
|
TMOS POWER FET 16 AMPERES 800 VOLTS | Original | 207.23KB | 8 | ||
| MTY16N80E-D |
|
TMOS E-FET Power Field Effect Transistor | Original | 243.44KB | 8 |
MTY16N80E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: MTY16N80E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading |
Original |
MTY16N80E MTY16N80E/D | |
AN569
Abstract: MTY16N80E
|
Original |
MTY16N80E/D MTY16N80E MTY16N80E/D* AN569 MTY16N80E | |
|
Contextual Info: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T Y 16N 8 0 E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T his high vo lta g e M O S F E T uses an adva n ce d te rm in a tio n |
OCR Scan |
MTY16N80E/D 340G-02 O-264 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
|
Original |
2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 | |
TIC 122 Transistor
Abstract: TY16N80E TY16N y16n
|
OCR Scan |