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    MTH13N50E

    Contextual Info: MOTOROLA SC ÍXSTRS/R F> 2bE D • b3b?2S4 0 0 ^ 0 4 ñ Order this data sheet by MTH13N50E/D MOTOROLA E3 SEMICONDUCTOR TECHNICAL DATA MTH13N50E Designer's Data Sheet TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate T M O S POWER FET


    OCR Scan     		mth13n50e/dmth13n50eswi065o-218ac+1c66760 PDF

    MTH13N50

    Abstract: MTM565 MRF531 MM3220 MM1758 MM3904 MM3004 mth5n100 MTM26N40E MTH7N50
    Contextual Info: STI Type: MJE8502A Notes: Polarity: NPN Power Dissipation: 80 VCEV: 1200 VCEO: 700 ICEV: 1200 ICEV A: 1.0 hFE: 7.5 hFE A: 1.0 VCE: 2.0 VBE: 1.5 IC: 2.5 COB: 300 fT: 5.0 Case Style: TO-220AB/TO-220: Industry Type: MJE8502A STI Type: MJF16010A Notes: Polarity:


    Original     		mje8502ao-220ab/to-220mjf16010ao-254+12mjf16018mjf16206mth13n50mtm565mrf531mm3220mm1758mm3904mm3004mth5n100mtm26n40emth7n50 PDF

    MTH13N50E

    Abstract: MTG9N50E MTH13N50 AN569 DS3903 mosfet ss 544
    Contextual Info: Order this data sheet by MTG9N50E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Full Pak Isolated TM OS E-FET High Energy Pow er M O SFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.4 OHM MAX 500 VOLTS This advanced high voltage TM O S E-FET is designed to w ith­


    OCR Scan     		mtg9n50e/dmth13n50emtg9n50emth13n50+3an569ds3903mosfet ss 544 PDF