MTB MARKING Search Results

Contextual Info: PLASTIC FILM CAPACITORS MTBS, MTB Series Tape Wrapped Metallized Polyester Film Capacitors This series offers metallized film capacitors that have axial leads and exhibit excellent heat resistance and moisture resistance. These capacitors employ a metallized polyester film

2j104k

Abstract: 2A104K mtb 230 0.33uf j 630v 033 j 630v 2J104
Contextual Info: PLASTIC FILM CAPACITORS MTBS, MTB Series Tape Wrapped Metallized Polyester Film Capacitors This series offers metallized film capacitors that have axial leads and exhibit excellent heat resistance and moisture resistance. These capacitors employ a metallized polyester film

5889

Abstract: OS15
Contextual Info: MTA and MTB Series Full-Size 7.3mm or 4.7mm height • Industry Standard Package • 5.0 or 3.3 Volt • HCMOS, Sinewave, Clipped Sine • 1.000MHz to 1.000GHz • Stability Down to ±1ppm Electrical Specifications H Option = HCMOS Output Frequency Range

3 pin TRIMMER capacitor

Contextual Info: MTA and MTB Series ¾ Industry Standard Package ¾ +3.30VDC or +5.00VDC ¾ RoHS Compliant Available ¾ Up to 77.760MHZ ELECTRICAL SPECIFICATIONS: Output Frequency Range Load Supply Current HCMOS Clipped Sinewave Sinewave 1.000 MHZ to 77.760 MHZ 8.000 MHZ to 77.760 MHZ

Contextual Info: PLASTIC FILM CAPACITORS MDD-P, MTB-P Series Metallized Polypropylene Film Capacitors for High frequency Product Specifications These types are metallized polypropylene film capacitors that have been used for many years and are suitable for communication devices and inverter

Contextual Info: PLASTIC FILM CAPACITORS MDD-P, MTB-P Series Metallized polypropylene film capacitors for high frequency Product Specifications These types are metallized polypropylene film capacitors that have been used for many years and are suitable for communication devices and inverter

MTB marking

Contextual Info: MTB, MTD, MVTB & MVTD Series SMD TCXO & VCTCXO FEATURES Microcom MDL Devices Ltd. Phone: 403-686-1889 Fax: 403-686-1604 www.microcomdevices.com . Surface Mount Packages . Wide Frequency & Temperature. Range . 5V, 3.3V, 3V Operation SPECIFICATIONS subject to change w/o notice

2j104k

Abstract: H R C M F 2J 225 2A104K MTB-p, hitachi 300-02F
Contextual Info: PLASTIC FILM CAPACITORS MTBS, MTB Series Tape Wrapped Metallized Polyester Film Capacitors This series offers metallized film capacitors that ha ve a x ial lead s and e x h ib it e x c e lle n t heat re s is ta n c e and m o is tu re re s is ta n c e . T h ese

Contextual Info: Thyristors S i B O D “ B r e a k o v e r D e v i c e s ? S MTB J Control overpower T "Cro w B a r" Protection MECHANICAL CHARACTERISTICS To protect sensitive telecom m unications • Transfer molded, void free epoxy body circuitry, Crydom Thyristors (SiBOD "

d0245

Abstract: BCW30 BCW29 IEC134 332 z marking, sot-23
Contextual Info: •I bb53S31 DD^MSbl MTb H A P X N AUER P H I L I P S / D I S C R E T E BCW29 BCW30 b?E ]> SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.

IXF6151

Abstract: LXT6051 249309 intel date code format
Contextual Info: IXF6151 28 T1/E1 Mapper Specification Update January 2001 Notice: The IXF6151 may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this specification update.

The 2002 is a COMMON BASE transistor

Abstract: high hfe transistor KRC681T KRC682T KRC683T KRC684T KRC685T KRC686T resistor 4.7 k
Contextual Info: SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES 1 High emitter-base voltage : VEBO=25V Min G High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) B C 2 F A Low on resistance : Ron=1 (Typ.) (IB=5mA)

KRC881T

Abstract: KRC882T KRC883T KRC884T KRC885T KRC886T MTB marking
Contextual Info: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)

Contextual Info: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K FEATURES 1 6 G 2 5 G High emitter-base voltage : VEBO=25V Min K B 3 4 DIM A B C D E A Low on resistance : Ron=1 (Typ.) (IB=5mA)

Contextual Info: SEMICONDUCTOR KRC881T~KRC886T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E K 6 G 2 5 3 4 D EQUIVALENT CIRCUIT TOP VIEW I 6 5 1. 2. 3. 4. 5. 6. Q1 Q2 E 1 2 0.95 H I _ 0.05 0.16 + 0.00-0.10 J 0.25+0.25/-0.15

Sauro CTM

Abstract: Sauro CIF Sauro msb Sauro CIM CSM 6850 SMC072S045 SMC072 Sauro t011 Sauro Cvf
Contextual Info: Product Identification and related Part-Number Produktidentifizierung und entsprechende Artikelnummer To order a SAURO’s product, the Complete Part-Number must be identified. It is composed by a Standard Code and a potential Custom Code. Code structures are indicated in the below diagrams.

KRC281S

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

jhdd

Contextual Info: SEM ICONDUCTOR KRC281S-KRC286S TECHNI CAL DATA EPI TAXI AL PLANAR NPN TRA NS IST OR SW ITC H IN G A PPLICATION. A U D IO M U TIN G A PPLICATION. FEA T U RE S L lì L DIM • High emitter-base voltage : V EBO=25V Min • High reverse hFE : reverse h FE=150(Typ.) (VCE=-2V, Ic=-4mA)

Toggle Switch mta 206pa

Abstract: MTF206TA MTE206PA MTL206N-P MTL306D 8Z0143 MTF406P alco MPn AC1500V MTF406PA
Contextual Info: Ｓ GREEN Ｍ Ｔ 照 SWITCH SERIES 光 •はじめに ■Introduction フジソクグリーンスイッチシリーズはMIL、DSP、UL 規格適合品などに代表されるように、当社の蓄積技術と 経験をもとにして、市場のニーズを先取りし端子部の永

Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20

KRC281S

Abstract: KRC282S KRC283S KRC284S KRC285S KRC286S MTB marking
Contextual Info: SEMICONDUCTOR KRC281S~KRC286S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B L L 3 H G A 2 1 C J DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20

10DB

Abstract: 50DBM 50MHZ
Contextual Info: Contents SPECTRUM ANALYZERS 3250 Series EMI Measurement User Manual Document part no. 47090/029 SPECTRUM ANALYZERS 3250 SERIES EMI Measurement User Manual Aeroflex Ltd. 2010 No part of this document may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying,

MRB 154

Contextual Info: SEMICONDUCTOR KRC681T~KRC686T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. E B FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

NATIONAL SEMICONDUCTOR MARKING CODE sot

Abstract: national marking code NATIONAL SEMICONDUCTOR MARKING CODE DEVICE MARKING CODE table sot-23 MARKING CODE ZA On semiconductor date Code dpak YEAR A national top marking codes national marking date code national marking code sot sot23 mark code KS
Contextual Info: Device Marking Conventions National Semiconductor marks devices sold in order to provide device identification and manufacturing traceablility information. The method of presenting the information marked on the device is dependent on the size of the device package