80 amp 30v npn darlington
Abstract: UD3008 transistor 2sc115 bd107a BD265A A515 B3570 B3571 BD106 HFE-10
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110bd265bd265abd265b+13y220bbd265lbd266lbd267l80 amp 30v npn darlingtonud3008transistor 2sc115bd107aa515b3570b3571bd106hfe-10
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75n07
Abstract: BD106 oms 450 2SC22 2N2306 usaf516es047m bdy15 2N5925 2SC115 M06G
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn11075n07bd106oms 450+72sc222n2306usaf516es047mbdy152n59252sc115m06g
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Transistors 2n551
Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts
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2n3392n339a2n3402n340a+162n3412n341a2n3422n342a2n3432n343atransistors 2n551heat sink to-392n19042n50682n29952n39162n35992n29512n31422n3444
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2N3920
Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
Contextual Info: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)
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2n9412n9422n9432n944+162n9452n9462n16762n16772n19172n19182n39202n6482n20042n29952n22022n2860to112n22282n29sa2n4307
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BD107
Abstract: BD106 m06g MT20a D7G2 SDT9903 2N2306 MT27 BLY86 m06b
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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npn110se7020sft440sft443a+15200m5180msns94202n23062n4262330msbd107bd106m06gmt20ad7g2sdt9903mt27bly86m06b
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G74B111
Abstract: pm35f A4T29-PC MT30A M8050 tamura PHT-023 G52E211 ttc123 PF6-24 SP3230
Contextual Info: Product Number Index MICROTRAN Part No. Page Part No. Page Part No. Page Part No. Page Part No. 1QA006 10A007 10A008 10A009 10A010 10A011 10B004 10B005 10B006 10C009 1QC010 10C011 10C012 20 20 20 20 20 20 20 20 20 20 20 20 20 3FD-416 3FD-420 3FO-424 3FD-428
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1qa00610a00710a00810a009+1610a01010a01110b00410b00510b00610c009g74b111pm35fa4t29-pcmt30am8050 tamurapht-023g52e211ttc123pf6-24sp3230
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2NS404
Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55
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2n3382n339a2n3402n340a+162n3412n341a2n3422n342a2n3432n343a2ns404transistors 2n5512n10182n14782n16202n5512n29512n39202n34442n2204
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