MSM5118160 Search Results

Contextual Info: OKI Semiconductor MSM5118160B_ E2G 0051-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM5118160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power

MSM5118160

Abstract: SOJ42
Contextual Info: J2G0152-29-41 作成：1999年 4月 MSM5118160D/DSL l 前回作成：1998年10月 ¡ 電子デバイス MSM5118160D/DSL 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5118160D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラン

MSM5118160B

Abstract: SOJ42-P-400-1
Contextual Info: E2G0051-17-41 ¡ Semiconductor MSM5118160B ¡ Semiconductor This version: Jan. 1998 MSM5118160B Previous version: May 1997 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160B is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS

MSM5118160D

Abstract: SOJ42-P-400-1
Contextual Info: O K I Semiconductor M S M 5 1 1 8 1 6 0 D 1rM 8,576-W onJ x 16-BJt DYNAJMC RAM : FAST PAOE MODE TYPE DESCRIPTION The MSM5118160D is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5118160D achieves high integration, high-speed operation, and low-power consumption

MSM5118160D

Abstract: MSM5118160DSL SOJ42-P-400-1
Contextual Info: E2G0152-29-41 ¡ Semiconductor MSM5118160D/DSL ¡ Semiconductor This MSM5118160D/DSL version: Apr. 1999 Previous version: Oct. 1998 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicon-gate

MSM5118160B

Contextual Info: OKI Semiconductor MSM5118160B_ E2G 0051-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM5118160B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power

Contextual Info: A O K I Semiconductor MSM5118160A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118160A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5118160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION MSM5118160Aisa 1,048,576-word xl6-bitdynam ie RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118160A achieves high integration, high-speed operation, and low-power

MSM5118160F

Abstract: SOJ42-P-400-1
Contextual Info: FEDD5118160F-01 1Semiconductor MSM5118160F This version: August. 2000 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Ras 1210

Abstract: MSM5118160 D012 MSM5118160A ES36
Contextual Info: O K I Semiconductor MSM5118160 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118160A achieves high integration, high-speed operation, and low-power

Contextual Info: PEDD5118160F-01 1Semiconductor MSM5118160F This version: May. 2000 Previous version :  Preliminary 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: FJDD5118160F-02 1電子デバイス MSM5118160F 今回作成：2001 年 1 月 前回作成：2000 年 8 月 1,048,576-Wordx16-Bit DYNAMIC RAM : 高速ページモード • 概要 MSM5118160F はCMOS プロセス技術を用いた 1,048,576 ワード×16 ビット構成のダイナミックラ

nc05

Contextual Info: O K I Semiconductor E2G0051-17-41 MSM5118160B_ 1,048,576-Word x 16-Blt DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160B is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5118160B achieves high integration, high-speed operation, and low-power

SOJ42-P-400-1

Abstract: MSM5118160F
Contextual Info: FEDD5118160F-01 1Semiconductor MSM5118160F This version: June. 2000 Previous version :  1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

M5118160

Abstract: Ras 1210 MSM5118160 MSM5118160A
Contextual Info: O K I Semiconductor MSM5118160 A_ 1,048,576-Word x 16-B it DYNAMIC RAM : FAST PAGE M ODE TYPE DESCRIPTION The MSM5118160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5118160A achieves high integration, high-speed operation, and low-power

UG2M13201PBT

Contextual Info: UG2M13201PBT-6AT Data sheets can be downloaded at www.unigen.com 4M Bytes 1M x 32 bits FPM MODE DRAM MODULE FPM Mode 72Pin SIMM based on 2 pcs 1M x 16 DRAMs with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM FEATURES Single 5V ± 10% power supply

MSM5118160B

Abstract: SOJ42-P-400-1
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

DRAMs

Abstract: MSM5416258A MSM5432126 MSM54V32126 oki Package SOJ msm51v17405b MSM54 TSOP300 msm514260c
Contextual Info: OKI Semiconductor DRAMs 1-Meg DRAMs 5 V Part Number Description Organization Pins / Package Access Time Max (ns) MSM511664B-xx Fast page 64K x 16 40 / DIP 70, 80 MSM514256C-xx Fast page 256K x 4 60, 70, 80 MSM514256CL-xx Fast page, low-power 20 / DIP, ZIP

MSM5118160F

Abstract: FJDD5118160F-03 SOJ42-P-400-1 MSM5118160 TPC35 oki MSM5118160F
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

UG6M13601PBG-6

Contextual Info: UG6M13601PBG-6 Data sheets can be downloaded at www.unigen.com FPM MODE DRAM MODULE 4M Bytes 1M x 36 bits FPM Mode 72Pin SIMM w/Parity based on 2 pcs 1M x 16 & 4 pcs 1M x 1 DRAMs with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

msm514260c

Abstract: MSM514256C edo 16m x 32
Contextual Info: E2G0004-17-42 Product Overview O K I Semiconductor Product Overview DRAM H H 5V 1M xT~1— I MSM5110OOC/CL H 256K X 4 1— I MSM514256C/CL j 128K X 8 h i MSM518126/L MSM518128/L I 64K X 16 M MSM511664C/CL MSM511666C/CL 2M~~hj 2M X 1 I— I M 3M 512100/T 1M X 2 I— ì MSM512200/L~

UG6M13601PBT-6

Abstract: UNIGEN
Contextual Info: UG6M13601PBT-6 Data sheets can be downloaded at www.unigen.com FPM MODE DRAM MODULE 4M Bytes 1M x 36 bits FPM Mode 72Pin SIMM w/Parity based on 2 pcs 1M x 16 & 4 pcs 1M x 1 DRAMs with LVTTL, 1K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 72-Pin SIMM

dq15 ti io board

Contextual Info: UG2M13201PBG-6KT Revision History Apr 10 , 2002 Rev - B Added More Detailed Dimension Information Of PCB , Full Data sheet Changed to new format. Data sheet released. U N IG EN C O N FI D EN TI AL Pr el im in ar y Dec 17 , 1997 Rev - A 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088