MSM5 Search Results

OE10E

Contextual Info: OKT semiconductor 1C MSM 5330/5331_ HIGH VOLTAGE LCD DRIVER_ GENERAL DESCRIPTION The MSM5530/5531 high w ith sta n d in g voltage driver LSI drives a TFT typ e LCD panel. It outputs analog voltages up to 15 V o f dynam ic range.

Contextual Info: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted

MSM5116800C

Contextual Info: Pr E2G0110-18-42 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800C is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116800C achieves high integration, high-speed operation, and low-power

MSM51V16165D

Abstract: MSM51V16165DSL SOJ42-P-400-1
Contextual Info: Pr E2G0132-17-61 el im y 1,048,576-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V16165D/DSL is a 1,048,576-word ¥ 16-bit dynamic RAM fabricated in Oki's silicongate CMOS technology. The MSM51V16165D/DSL achieves high integration, high-speed operation,

MSM5416258A

Abstract: msm5416258
Contextual Info: E2L0047-28-Z2 This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 ¡ Semiconductor MSM5416258A ¡ Semiconductor 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate

MSM51V17805D

Abstract: MSM51V17805 MSM51V17805DSL
Contextual Info: Pr E2G0129-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM51V17805D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM5547

Abstract: Hour,minute and second Digital Clock Circuit 12 Hour Digital Clock Circuit msm55 4.194304 crystal oscillator Digital Pulse Counter Two Digit M5547 MSM5547GS-L2 QFP44-P-910-0 12 pin 4digit 7 segment display
Contextual Info: FEDL5547-03 FEDL5547-03 ¡ Semiconductor MSM5547 ¡ Semiconductor This version: May. 2000 MSM5547 Previous version: Nov. 1999 Digital Clock GENERAL DESCRIPTION MSM5547 is a clock IC having a wide power supply range with 4.194304 MHz original oscillation. MSM5547 is a 12 hour cycle AM/PM clock for a static fluorescent character display

MSM51V17800

Abstract: MSM51V17800DSL
Contextual Info: Pr E2G0127-17-61 el im y 2,097,152-Word ¥ 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800D/DSL is a 2,097,152-word ¥ 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17800D/DSL achieves high integration, high-speed operation,

MSM51V4222C

Abstract: MSM51V8222A MSM54V12222A MSM54V12222A-30-TS-K MSM54V12222A-40-TS-K
Contextual Info: MSM54V12222A OKI Semiconductor OKI Semiconductor MSM54V12222A REVISION-1 1997. 9 . 30 262,214 Words ¥ 12 Bits FIELD MEMORY GENERAL DESCRIPTION The OKI MSM54V12222A is a high performance 3M bits, 256K X 12 bits, Field Memory especially designed for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital

msm51v17400d

Abstract: MSM51V17400 MSM51V17400DSL
Contextual Info: Pr E2G0123-17-61 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17400D/DSL is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17400D/DSL achieves high integration, high-speed operation,

MSM5432128

Contextual Info: Pr E2L0045-17-Y1 el im DESCRIPTION The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word ¥ 32-bit configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate process technology. The device operates with a single 5 V power supply.

MSM514900CSL

Contextual Info: E2G0025-17-42 ¡ Semiconductor MSM514900C/CSL ¡ Semiconductor This MSM514900C/CSL version: Jan. 1998 Previous version: May 1997 524,288-Word ¥ 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514900C/CSL is a 524,288-word ¥ 9-bit dynamic RAM fabricated in Oki's silicon-gate

MSM5117800

Abstract: MSM5117800C
Contextual Info: E2G0112-18-42 O K I Semiconductor MSM5 1 17800 C This version: Apr. 1998 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800C is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power

MSM514221A

Abstract: MSM518221 MSM518222 MSM518222-25JS MSM518222-30ZS MSM518222-40JS L171B
Contextual Info: O K I Semiconductor MSM518222 262,214 Word x 8-bit Field Memory DESCRIPTION The OKI MSM518222 is a high performance 2M bit Field Memory designed for applications such as HDTV {high definition television , TBC time base correction), TVs/VCRs w ith digital effects, multimedia or other applications where serial data storage is required. The 262,214 word depth allows for

bq785

Abstract: 20-P-300-1 MSM514100DL ZIP20-P-400-1 msm514100d
Contextual Info: O K I Semiconductor MSM5141 OOP/PL_ E2G0022-17-41 4,194,304-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514100D/DL is a 4,194,304-word x 1-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM514100D/DL achieves high integration, high-speed operation, and

MSM51V17805

Abstract: MSM51V17805DSL
Contextual Info: E2G0129-17-61 O K I Semiconductor MSM51V17805D/DSL 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM51V17805D/DSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805D/DSL achieves high integration, high-speed operation,

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

PIN DIAGRAM of IC AD 524

Abstract: MSM534001B
Contextual Info: O K I Semiconductor MSM534001B 5 2 4 ,2 8 8 - W o r d x 8 - B i t M a s k R O M DESCRIPTION 15 a hlgh' speed Silkon Sate CMOS Mask ROM with 524,288-word x 8-bit capacity, n in cfi/n operates on a single 5.0 V power supply and is TTL compatible. The chip's asynchro­

MSM51V18165BSL

Abstract: S0j42-P-400-127 msm51v18165b
Contextual Info: O K I Semiconductor MSM5 1V18 1 65B/BSL_ E2G 0087-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION MSM51 V18165B/BSL is a 1,048,576-word x 16-bit dynamic RAMfabricated in Oki's silicon-gate CMOS technology. The MSM51V18165B/BSL achieves high integration, high-speed operation, and

transistor sl 431

Abstract: ZIP40-P-475
Contextual Info: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate MSM51419 0 /SL is OKI's CMOS silicon gate process technology.

MSM5416263

Abstract: 256x16* STATIC RAM weland SM5416
Contextual Info: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.

MAS 10 RCD

Abstract: MSM54V32128 1DQ23
Contextual Info: O K I Semiconductor_ M SM 54V 32126/8_ 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM54V32126/8 is a new generation Graphic D RAM organized in 131,072-word x 32-bit configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CM O S silicon gate