MSB12 Search Results

Contextual Info: MSB1218A-RT1 Preferred Device PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−70/SOT−323 package which is designed for low power surface

MSB120DA-1

Contextual Info: Ultra Bright LED Lamps T Y PE NO. SOURCE COLOUR rv Xp nm Vf MAX If MIN If (mcd) (mA) (V) (m A ) LENS CHARACTERISTICS MSB 12 OTA GaAlAs Red 660 55 20 2.4 20 Clear transparent GaAlAs Red 660 55 20 2.4 20 Red transparent MSB120DA-1 GaAlAs Red 660 25 20 2.4

Contextual Info: CRO MSB120DA-X U LTRA H IG H BRIGHTNESS R ED LED LA M P DESCRIPTION MSB120DA-X is ultra high brightness output red GaAlAs LED lamp encapsulated in a 12mm diameter large package, red diffused lens. 6 brightness grouping is provided for customer’s selection.

transistor sc 308

Abstract: MSB1218A MSB1218A-RT1 SMD310
Contextual Info: ON Semiconductort MSB1218A-RT1 PNP Silicon General Purpose Amplifier Transistor ON Semiconductor Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package which is designed for low power surface

Bypass Diode Module for Solarcell

Contextual Info: MSB12A45S2L Bypass Diode Module for Solarcell Reverse Voltage 45V Forward Current 12A Schottky Barrier Diode Type Features ◆ Low thermal resistance ◆ Low forward voltage drop,low power loss ◆Compact ◆ Outline Drawing internal schematic diagram outline design

MSB120DA-1

Abstract: MSB120DA-4 MSB120DA-5 MSB120DA-X
Contextual Info: MSB120DA-X ULTRA HIGH BRIGHTNESS RED LED LAMP DESCRIPTION MSB120DA-X is ultra high brightness output red GaAlAs LED lamp encapsulated in a 12mm diameter large package, red diffused lens. 6 brightness grouping is provided for customer's selection. No Scale

MSB120DA-3B

Abstract: MSB120DA-4B MSB120DA-5B MSB120DA-B
Contextual Info: UKU ULTRA HIGH BRIGHTNESS RED LED LAMP DESCRIPTION MSB120DA-B is ultra high brightness output AlGalnP LED lamp encapsulated in a 12mm diameter large package, red diffused lens with 3 brightness grouping is provided for customer's selection. ABSOLUTE MAXIMUM RATINGS

Contextual Info: CRO MSB120DA-B ULTRA HIGH BRIGHTNESS RED LED LAMP DESCRIPTION 011.80 0.46 MSB120DA-B is ultra high brightness output AlGalnP LED lamp encapsulated in a 12mm diameter large package, red diffused lens with 3 brightness grouping is provided . for customer's selection.

Contextual Info: ON Semiconductort MSB1218A-RT1 PNP Silicon General Purpose Amplifier Transistor ON Semiconductor Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package which is designed for low power surface

Contextual Info: MICRO ELECTRONICS LT» bCHlTöfi □OOCHb'i Ô 41E D 3 MEHK 7 MSB120DA-1 ULTRA HIGH BRIGHTNESS BIG LED LAMP 012mm DESCRIPTION MSB120DA-1 is an ultra high brightness output red GaAlAs LED lamp encapsulated in a 12mm diameter round type package with red diffused

Contextual Info: MSB1218A- RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface

Contextual Info: ON Semiconductort MSB1218A-RT1 PNP Silicon General Purpose Amplifier Transistor ON Semiconductor Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package which is designed for low power surface

marking IAM transistor sot-23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB1218A-RT1 PNP Silicon General Purpose A m plifier Transistor Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package

MSB1218A

Abstract: MSB1218A-RT1 MSB1218A-ST1 SMD310
Contextual Info: MOTOROLA Order this document by MSB1218A–RT1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 MSB1218A-ST1 This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package

Contextual Info: CRO MSB120DA-X ULTRA HIGH BRIGHTNESS RED LED LAMP DESCRIPTION MSB120DA-X is ultra high brightness output red GaAlAs LED lamp encapsulated in a 12mm diameter large package, red diffused lens. 6 brightness grouping is provided for customer’s selection. ABSOLUTE MAXIMUM RATINGS

MSB1218A

Contextual Info: MSB1218A−RT1 Preferred Device PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−70/SOT−323 package which is designed for low power surface

Transistor motorola 418

Abstract: kd pnp RB SC-70
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSB1218A-RT1 MSB1218A-ST1 PNP Silicon General Purpose Am plifier Transistor M o to ro la Preferred D e v ic e s This PNP Silicon Epitaxial Planar Transistor is designed for general purpose am plifier applications. This device is housed in the SC -70/SOT-323 package

MSB1218A-RT1G

Abstract: MSB1218A
Contextual Info: MSB1218A- RT1G PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface

Contextual Info: SK4295 REVISION RECORD EC O 19378 DATE SET 5 -a BE NC APP DR X HE :( .673 42.49] ; < J u y t - 0 .5 8 3 c r 1, [ 14 . 81 ]— D D O Z ^ MSB122D 44X H PO SITR O N IO IN D U S T R IE S INC. •w w w .connectpositronic.com I SCALE -S 3 10.015 r0.3fll Iff 4484

MSB120DA-0

Abstract: MSB120DA-1 MSB120DA-2 MSB120DA-4 MSB120DA-5 MSB120DA-X
Contextual Info: UKU MSB120DA-X ULTRA HIGH BRIGHTNESS RED LED LAMP DESCRIPTION MSB120DA-X is ultra high brightness output red GaAlAs LED lamp encapsulated in a 12mm diameter large package, red diffused lens. 6 brightness grouping is provided for customer’s selection. •

MSB1218A-RT1-D

Contextual Info: MSB1218A−RT1 Preferred Device PNP Silicon General Purpose Amplifier Transistor This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−70/SOT−323 package which is designed for low power surface

MSB1218A

Abstract: MSB1218A-RT1 SMD310
Contextual Info: MOTOROLA Order this document by MSB1218A–RT1/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor MSB1218A-RT1 Motorola Preferred Devices This PNP Silicon Epitaxial Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC–70/SOT–323 package

Contextual Info: CRO MSB120DA-B ULTRA HIGH BRIGHTNESS RED LED LAMP DESCRIPTION MSB120DA-B is ultra high brightness output AlGalnP LED lamp encapsulated in a 12mm diam eter large package, red diffused lens with 3 brightness grouping is provided for custom er's selection. ABSOLUTE MAXIMUM RATINGS

Contextual Info: N AMER PHILIPS/DISCRETE II ObE D ^ 1^53=131 Q01SQ71 T • MAINTENANCE TYPE I MSB12900Y for new design use MSB11900Y / V T - 3 3 -/5" PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in