MS027 Search Results

IS41LV16257B

Abstract: 41LV16257B PK13197T40
Contextual Info: IS41LV16257B JUNE 2007 256K x 16 4-MBIT DYNAMIC RAM WITH FAST PAGE MODE FEATURES DESCRIPTION • • • • The ISSI IS41LV16257B is 262,144 x 16-bit highperformance CMOS Dynamic Random Access Memories. Fast Page Mode allows 512 random accesses within a single row with access cycle time as

IS61C5128AL

Abstract: IS61C5128AS-25QLI IS61C5128AL-10KLI IS61C5128AL-10TLI IS61C5128AS-25TLI 64C5128AS
Contextual Info: IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64C5128AL • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS)

Contextual Info: SLD433S4 60W Array Laser Diode Preliminary Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power

Contextual Info: jdt 3.3V CMOS STATIC RAM 4 MEG 256K x 16-BIT) PRELIMINARY I n t e g r a t e d D e v i c e T e c h n o lo g y , In c . FEATURES: • 256K x 16 advanced high-speed CMOS Static RAM • JEDEC Center P ow er/G N D pinout for reduced noise. • Equal access and cycle times

Contextual Info: IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features • 16,777,216 word by 4 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out CAS before RAS Refresh - 4096 cycles/Retention Time 64ms Standard Power SP Retention Time

IS41LV16105A

Contextual Info: ISSI IS41LV16105A 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE APRIL 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41LV16105A is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page

IS41C16105

Abstract: IS41LV16105 IS41C16105-50TL N-40A
Contextual Info: IS41C16105 IS41LV16105 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH FAST PAGE MODE DECEMBER 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single

SAA4955TJ

Abstract: SAA4955TJDP-T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAA4955TJ 2.9-Mbit field memory Product specification Supersedes data of 1997 Sep 25 File under Integrated Circuits, IC02 1999 Apr 29 Philips Semiconductors Product specification 2.9-Mbit field memory SAA4955TJ PALplus, PIP and 3D comb filter. The maximum storage

Contextual Info: IS63LV1024 IS63LV1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT MAY 2004 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

Contextual Info: IBM0165805B IBM0165805P ADVANCED 8M x 8 12/11 E D O D R A M Features • 8,388,608 word by 8 bit organization Read-Modity-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time

CHN 920

Abstract: 71024S15 chn 830
Contextual Info: jdt CMOS STATIC RAM 1 MEG 128Kx 8-BIT) IDT71024 ïite g ia te d D ev ize T ech n o logy, ï i c . FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed CM O S static RAM • Com m ercial (0° to 70°C), Industrial (-40° to 85°C) and M ilitary (-55° to 125°C) tem perature options

sony ir module

Abstract: 2 Wavelength Laser Diode C6802 IEC60825-1 SLD433S4 laser diode lifetime water conductivity circuit
Contextual Info: SLD433S4 60W Array Laser Diode Preliminary Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S207 Features • High power

ordering information

Contextual Info: Mechanical Drawings DEVICES INCORPORATED Mechanical Drawings ❑ Ceramic Dual In-line Package ❑ Sidebraze, Hermetic Dual In-line Package ❑ Flatpack ❑ Ceramic Pin Grid Array ❑ Plastic J-Lead Chip Carrier ❑ Ceramic Leadless Chip Carrier ❑ Ceramic Flatpack

mpc560xb bolero

Abstract: MPC5606B CHN 949 transistor BC 247 LINFlex PROTOCOL linflex MPC560xB "Base Station subsystem 30f131 pj 989
Contextual Info: Devices Supported: MPC5607B MPC5607BRM Rev. 5 31 Jan 2010 MPC5607B Microcontroller Reference Manual, Rev. 5 Freescale Semiconductor Preliminary—Subject to Change Without Notice 1 Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available

IS61WV5128EDBLL

Abstract: is61wv5128
Contextual Info: IS61WV5128EDBLL IS64WV5128EDBLL 512K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2011 DESCRIPTION The ISSI IS61/64WV5128EDBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

Contextual Info: IS61C1024AL IS64C1024AL ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM DECEMBER 2004 FEATURES DESCRIPTION • High-speed access time: 12, 15 ns • Low active power: 160 mW typical • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

is61wv5128

Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM JULY 2007 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

IS61WV6416EEBLL

Abstract: IS64WV6416EEBLL-10BA3
Contextual Info: IS61WV6416EEBLL IS64WV6416EEBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC NOVEMBER 2012 DESCRIPTION The ISSI IS61/64WV6416EEBLL is a high-speed, FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW typical • Low Standby Power: 7 mW (typical)

is61wv5128

Abstract: IS61WV5128BLL-10TLI
Contextual Info: IS61WV5128ALL/ALS IS61WV5128BLL/BLS IS64WV5128BLL/BLS 512K x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM MAY 2007 FEATURES HIGH SPEED: IS61/64WV5128ALL/BLL • High-speed access time: 8, 10, 20 ns • Low Active Power: 85 mW (typical) • Low stand-by power: 7 mW (typical)

Contextual Info: ISSI IS63LV1024 IS63LV1024L 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT DECEMBER 2005 FEATURES DESCRIPTION • High-speed access times: 8, 10, 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for

is61c1024al-12jli

Abstract: MS-027
Contextual Info: IS61C1024AL IS64C1024AL 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW typical • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications

Contextual Info: IS41C16100 IS41LV16100 ISSI 1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE September 2005 FEATURES DESCRIPTION • TTL compatible inputs and outputs; tristate I/O The ISSI IS41C16100 and IS41LV16100 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories.

SOJ40

Contextual Info: PDF: 2003 Mar 24 Philips Semiconductors Package outline SOJ40: plastic small outline package; 40 leads J-bent ; body width 10.16 mm SOT449-1 X D c eE y bp 40 b1 A 21 w M E HE A2 A pin 1 index A1 (A 3) 1 20 Lp ZD e detail X v M A 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

SAA4955TJ

Abstract: SOJ40
Contextual Info: Philips Semiconductors Preliminary specification 2.9-Mbit field memory SAA4955TJ PALplus, PIP and 3D comb filter. The maximum storage depth is 245772 words x 12 bits. A FIFO operation with full word continuous read and write could be used as a data delay, for example. A FIFO operation with