MS016 Search Results

Contextual Info: 5 THIS DRAW ING IS U N PU BLISH ED. RELEASED FOR ALL COPYRIGHT BY TYCO ELECTRON ICS PU BLICATIO N RIGHTS - 4 2 3 REV ISI ONS ,- RESERVED. AG C O R PO R A T IO N. 53 LTR DESCRIPTIO N G2 /K ECO —07 —0 05 547 MATERIAL: HOUSING - THERMOPLASTIC U L 9 4 CENT ACT - PHESPHER BRENZE,

electrical circuit diagram reverse forward move

Abstract: 10S20A 1000k pot HC55120 HC55121 HC55130 HC55131 HC55140 HC55141 HC55142
Contextual Info: HC55120, HC55121, HC55130, HC55131, HC55140, HC55141, HC55142, HC55143, HC55150, HC55151 Data Sheet June 2002 Low Power UniSLIC14 Family Features The UniSLIC14 is a family of Ultra Low Power SLICs. The feature set and common pinouts of the UniSLIC14 family

T4 1060

Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

SST39LF512

Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet

SST39SF010A

Abstract: SST39SF020A SST39SF040 A17-A3
Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations

AT45D161

Abstract: AT45DB161B TSOP 28 SPI memory Package flash AT45D161-JC PA10 PA11
Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations

hk-001 94v-0

Abstract: sec d 5072 transistor D 5038 Transistor Horizontal equivalent of transistor sec 5027 8011-8G7 LSG-1DG17-14 508-AG10D augat 510AG92D20ES Catalog 1307612 augat 8136
Contextual Info: Catalog 1307612 Courtesy of Steven Engineering, Inc. Ÿ 230 Ryan Way, South San Francisco, CA, 94080-6370 Ÿ Main Office: 650 588-9200 Ÿ Outside Local Area: (800) 258-9200 Ÿ www.stevenengineering.com Sockets Revised 7-01 Table of Contents DIP Sockets Solder Tail Dual Leaf (DL) Contact …………………………………………5002-5007

AT28HC256N

Abstract: AT28HC256N-12 AT28HC256N-12JI AT28HC256N-90 AT28HC256N-90JI MS-016
Contextual Info: Features • Fast Read Access Time – 90 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms Maximum – 1 to 64-byte Page Write Operation

H 1061

Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

SST49LF020A

Contextual Info: 2 Mbit LPC Flash SST49LF020A SST49LF020A2Mb LPC Flash Data Sheet FEATURES: • LPC Interface Flash – SST49LF020A: 256K x8 2 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks

AT45DB161-RI

Abstract: AT45DB161 AT45DB161-JC atmel 528 AT45DB161B PA10 PA11 AT45DB161-TC
Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram Erase and Program – 4096 Pages (528 Bytes/Page) Main Memory Optional Page and Block Erase Operations

AT49LV040

Abstract: 496k AT49BV040 AT49LV040-70TC AT49BV040-12JC
Contextual Info: Features • • • • • • • • • Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time – 70 ns Internal Program Control and Timer 16K Bytes Boot Block with Lockout Fast Chip Erase Cycle Time – 10 seconds

MS-016

Contextual Info: MS-016 P LA ST IC CHIP CARRIER PCC FAMILY 1 . 21m m / .050" LEAD SPACING, R E C T A N G U L A R JEDEC SOLID STATE PRODUCTS S T ANDARD OUTLINE SHT. 1 OF 12 mm fncfi t 153-01) B9 FIGURE 1 PRINCIPAL DIMENSIONS S DATUMS MS-016 SHT. 2 OF 12 -D ♦ ± D . 0 0 2 / “ A-B

Contextual Info: Features • Single 4.5V - 5.5V Supply • Serial Interface Architecture • Page Program Operation - Single Cycle Reprogram Erase and Program - 2048 Pages (264 Bytes/Page) Main Memory • Two 264-Byte SRAM Data Buffers - Allows Receiving of Data while Reprogramming of

Contextual Info: Features • 2.7 to 3.6V Supply - Full Read and Write Operation • Low Power Dissipation - 8 mA Active Current - 50 nA CMOS Standby Current • Read Access Time - 250 ns • Byte Write - 3 ms • Direct Microprocessor Control - DATA Polling - READ/BUSY Open Drain Output on TSOP

39lf040

Abstract: SST39VF010 SST39VF020 SST39VF040 SST39VF512 SST39LF010 SST39LF020 SST39LF040 SST39LF512
Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

Contextual Info: Features • Fast Read Access Tim e - 70 ns • Dual Voltage Range Operation - Low Voltage Power Supply Range, 3.0V to 3.6V - or Standard 5V ± 10% Supply Range • Com patible with JEDEC Standard AT27C010 • Low Power CMOS Operation - 20 i*A max. less than 1 jiA typical Standby for Vcc = 3.6V

Contextual Info: Features Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time -120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time -1 0 seconds Byte-by-Byte Programming - 30 |is/Byte Typical

ABL SURSUM

Abstract: MA4.0U NFPA70 MA32U sursum MS063 MA6.3U FI22.03Y FI44.30 Cat fi22.03
Contextual Info: Circuit Protection Devices MA Three Phase Adjustable Circuit Breakers — 35 mm DIN Rail Mount The Altech/ABL SURSUM MA holds through starting and inrush currents of three phase transformers, lighting, power supplies and motors including the new high efficiency motors yet provides tight overload protection, fast half-cycle short-circuit protection, and current/energy let-through protection.

SST29EE010

Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability

0565C-FLASH-05

Contextual Info: Features • • • • • • • • • • • • • Single Voltage, Range 3V to 3.6V Supply 3-volt Only Read and Write Operation Software Protected Programming Fast Read Access Time - 100 ns Low Power Dissipation – 15 mA Active Current – 40 µA CMOS Standby Current

5962-88525 15 ZX

Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC AT28C256 CERAMIC LEADLESS CHIP CARRIER AT28C256-15 AT28C256-20 AT28C256-25 AT28C256-35 AT28C256F
Contextual Info: Features • Fast Read Access Time – 150 ns • Automatic Page Write Operation • • • • • • • • • • – Internal Address and Data Latches for 64 Bytes – Internal Control Timer Fast Write Cycle Times – Page Write Cycle Time: 3 ms or 10 ms Maximum

MS-016-AE

Abstract: MO-052 MS-016AE 32-PIN MS-016 MO-052AE
Contextual Info: DEVICES INCORPORATED 1320 Orleans Drive Sunnyvale, CA 94089 408 542-5400 TITLE PLASTIC J-LEAD CHIP CARRIER 32-PIN 0.490" x 0.590" DOCUMENT NUMBER DATE MD-J6 01/13/97 REV B SHEET 1 OF 1 0.050 BASIC 0.045 x 45˚ 0.390 0.430 0.490 0.530 Reference: JEDEC - MO-052-AE