MS-6 G Search Results

Phototransistor L14

Abstract: SL-2341 32 SLP-836A-37 SL-2341-20 SLR-981A SLP-881A-37 SLP-255 SLR-931A SL1255 SLP881A37
Contextual Info: Magnetoresistance sensors va max V P max (mW) Vout (ittVrm*) R <Q) Width (mm) MS-0 Device 5.5 50 0.4 to 1.1 600 to 4500 3 MS-E 5.5 50 0.4 to 1.1 600 to 4500 6 MS-F-06 5.5 44 0.16 to 0.42 700 to 4500 3 MS-F-11 5.5 44 0,16 to 0.42 700 to 4500 3 Features High S/N ratio

TTC-199

Abstract: PA-1101
Contextual Info: REV. S ta tu s REVISION 1 2 / 0 9 / 8 5 MS REVISION A 0 3 / 2 1 / 8 6 MS REVISION B 0 2 / 2 6 / 9 0 HA REVISION C REVISED AND REDRAWN ON CAD/CAM 0 4 / 2 7 / 9 8 TS LOW PROFILE TELECOMMUNICATION COUPLING TRANSFORMER A. Electrical Specifications 25° C

Contextual Info: VUE 50 VRRM = 1200 V IdAV = 50 A trr = 40 ns Three Phase Rectifier Bridge VRSM VRRM V V 1200 1200 4 5 1/2 Type VUE 50-12NO1 12 10 8 6 8 4/5 10 6 Symbol Test Conditions IdAV TK = 85°C, module IFSM TVJ = 45°C; VR = 0 t = 10 ms 50 Hz , sine t = 8.3 ms (60 Hz), sine

Contextual Info: REV. S ta tu s REVISION 0 6 /1 8 /8 8 YA REVISION A 0 6 /1 2 /8 7 MS REVISION B 0 6 /1 9 /8 7 MS REVISION C 0 7 /1 9 /8 8 YA REVISION D REVISED AND REDRAWN ON CAD/CAM 0 4 /2 4 /9 8 TS TELECOMMUNICATION WET COUPLING TRANSFORMER DESIGNED TO OPERATE FROM —45dBm TO +10dBm WITH 0 TO 90mADC IN PRIMARY AND REFLECT A PRIMARY

Contextual Info: —Stan dard Valves— 4222-B Valve 4222-B VALVE HALF W A V E W A T E R C O O LE D RECTIFIER. SP EC IFIC A TIO N . Cathode. Pure Tungsten filament. Constant voltage type. W ater Jacket. Type MS. 1362 Grp. I for anode dissipation up to 6 Kw. Type MS. 1362 Grp. 20 for below panel con­

4006a

Abstract: 4006
Contextual Info: Standard Valves 4006-A Valve — 4006-A VALVE SIN G LE EN D ED W A T E R C O O LE D TRIO DE. 75* Diam SPECIFICATION. Cathode. Pure Tungsten Filament. Constant Voltage Type. W ate r Jacket. Type MS. 1362 Grp. I for anode dissipation up to 6 Kw. Æ L Type MS. 1362 Grp.20 used for below panel con­

2n4416

Abstract: Siliconix N-Channel JFETs marking code vishay SILICONIX to-72 2N4416 Siliconix SST4416
Contextual Info: 2N4416/2N4416A/SST4416 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number V G S o ff (V) V (B R )G S S Min (V) gfs Min (mS) loss (mA) -3 0 4.5 -2 .5 to - 6 -3 5 4.5 5 -< 6 -3 0 4.5 5 2N4416 -< 6 2N4416A SST4416 5 FEATURES BENEFITS APPLICATIONS

OSC-8MHZ

Abstract: MN151634 QFP100-P-1818A
Contextual Info: □ MN151634 M N 151634 1 Type • R O M x 8 -b it 16K ■ R A M (x 4 -b it) 512 1 N u m b e r of Instru ctio ns 104 1 .Ops (at 4 .5 1o 5 .5V) 1 Minimum Instruction Execution Time 2 6 . 6 ms (at 2 . 2 to 5 .5 V , 150kHz) 5 3 . 3 ms (at 2 . 2 to 5 .5 V , 75kHz)

Rod 436

Abstract: push to on switch V3-1001 push to on data switch of push to on switch Honeywell v3-1001 4AC54 122H
Contextual Info: CATALOG m ic r o sw rrcH a Honeywell Division FED. MFG. CODE LIS TIN G 4AC54 ASSEMBLY-SWITCH KC-D0561 91929 MILITARY STDS PART NO. MS 1 6 1 0 6 -2 PUSH TO OPERATE - RETURNS AUTOM ATICALLY TO POSITION SHOWN PULL TO OPERATE - REMAINS IN OPERATED POSITION UNTIL

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0 G 6 1 - 0 0 8 6 - 0 2 DWN 20DEC02 APVD JR MS D D © & @ STAMPED □N UNDERSIDE

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC ALL RIGHTS RESERVED. REVISIONS J LTR B2 DESCRIPTION REDRAW W /0 CHANGE DWN DATE E C R -0 6 -0 1 8497 APVD MS KB 01AUG 06 6. 2 L ±0. 3 3. 6 l. 8 3.

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

M1061

Abstract: M1014 M163C M-137 M53X
Contextual Info: .780 MAX. P art Number 1.75 MAX. Des ign V oltage A mps MS C P L ife Hours F ilament T ype C M210 C M1014 6.5 6.6 1.78 1.50 15.0 10.0 100 200 C -6 C -6 C M1061 C M104 C M1004 6.7 12.8 12.8 1.80 1.00 .94 13.0 12.0 15.0 400 500 100 C -6 C -6 C -6 P art Number

Diodes de redressement

Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Contextual Info: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A

95010

Contextual Info: Ref. #: MS-100719 Last Update: 2-20-09 Dimensions: mm in. 17.40 (.685) 7.50 (.295) 4.85 (.19) PT 7.45 OP 6.65 6.90 (.293) (.271) (.261) 6 (.236) FP 2.30 (.09) ø2.60 (ø.102) ø2.30 (ø.09) COM: BLACK 3±1 (.118±0.39) Min500 (19.69) NC: GRAY NO: BLUE 5.20

OP 745

Abstract: G-70
Contextual Info: Ref. #: MS-100026 Last Update: 5-9-05 Dimensions: mm In. 17.40 (.685) 7.50 (.295) 4.85 (.19) PT 7.45 6.65 6.90 (.293) (.261) (.271) 6 (.236) FP OP 2.30 (.09) ø2.60 (ø.102) ø2.30 (ø.09) 8.50 (.334) Min 5 (.196) COM: BLACK NC: GRAY NO: CYAN 5.20 (.204)

SM81L256K16DJ-30

Abstract: SM81L256K16DJ-35 SM81L256K16DJ-40 SM81L256K16DS-30 SM81L256K16DS-35 SM81L256K16DS-40
Contextual Info: Silicon SM81L256K16D MAGIC 256K x 16 EDO DRAM .[ '2'5$0 9ROW Features        262,144-Word by 16-Bit organization Single +3.3V (+10%/-5% power supply 512 refresh cycles / 8 ms Refresh modes: 5$6-only, &$6-before-5$6 (CBR) and Hidden

Contextual Info: TM4256FL8, TM4256GU8 262,144 BY 8 BIT DYNAMIC RAM MODULES OCTOBER 1985 —REVISED FEBRUARY 1988 2 6 2 ,1 4 4 x 8 Organization TOP VIEW Utilizes Eight 256K Dynamic RAMs in Plastic Chip Carrier vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 W Long Refresh Period . . . 4 ms (25 6 Cycles)

Contextual Info: Low Power Diodes Rectifier diodes Ifsm I favm trr outline V A 10 m s, tvj ~ tvj max A °C/W Io D 6/ j ° Type 1200.1600 100 6 - 150 151 I fa v m V rrm Cathnrift 151 Controlled avalanche diodes Type V rrm V DA 3 / DA 6 / V br Ifs m A A 10 ms, tA = 45°C tvj = tvj max

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - ALL RIGHTS RESERVED. LOC DIST AD 00 REVISIONS LTR RECOMMENDED DESCRIPTION REVISED PER E C Q - 0 5 - 0 1 2 2 2 6 DATE DWN APVD 1 9 MAYO6 GS MS PANEL CUTOUT

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G 3H — 0 0 6 9 — 0 4 DWN 10MAR04 APVD JR MS D D ±.005 ±.015 .620 _L ± .0 1 0

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 50 LTR DESCRIPTION DATE REV PER 0G3H— 0 0 4 6 — 04 DWN 16FEB04 APVD JR MS D D 1111 CDLDR CDDED PURPLE

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION LOC G ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. DIST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G 3H — 0 0 6 9 — 0 4 DWN 10MAR04 APVD JR MS D D +.005 , 5 2 5 - DIA, G +.015

RUBYCON twss

Abstract: RUBYCON Capacitors TWSS twss series
Contextual Info: RU BY CON AMERICA INC OflE D | T^OOS^Ö 0000544 0 | A ,Q S -U -0 capacitors REB M 8 8 — t 5(MS 1 6 MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS MS16 SERIES CLow profile, 12.5mm to 25mm Height] • FEATURES iISv«0«r # M S 1 6 series has been designed for low profile equipments such as