MRF559 V Search Results

MRF559 V Result Highlights (5)

Part	Manufacturer	Description
LM2907MX	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907MX/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917M/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907M/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917MX/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85

MRF559 V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
motorola MRF559 Abstract: mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor Contextual Info: MOTOROLA Order this document by MRF559/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF559 . . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts	Original	MRF559/D MRF559 motorola MRF559 mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor	PDF
mrf559 v Abstract: MRf559 mrf555 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB	Original	MRF559 2N5109 MRF5943C 2N4427 MRF4427, MRF559 mrf559 v mrf555	PDF
MRF559 Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB	Original	MRF559 2N5109 2N4427 MRF4427, MSC1317 MRF559 mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607	PDF
MRF559 Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF559 MRF545 MRF544 MRF559	PDF
MRF559 Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF559 MRF559 3-20-0erves	PDF
MRF559 Contextual Info: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package	Original	MRF559 MRF559G MRF559	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF559 The RF Line 0 .5 W — 8 7 0 M H z HIG H FREQUENCY TR A N SISTO R N P N S IL IC O N H IG H F R E Q U E N C Y T R A N S IS T O R N P N S IL IC O N . d e s ig n e d fo r U H F lin e a r a n d la rg e - s ig n a l a m p lifie r a p p lic a tio n s .	OCR Scan	MRF559	PDF
MRF553T Abstract: MRF517 Contextual Info: MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB typ @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA • Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz	Original	MRF517 To-39 MRF545 MRF544 MRF553T MRF517	PDF
j353 Abstract: transistor j353 j353 transistor MRF559 TRANSISTOR J408 j361 MHW808 Contextual Info: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistor . . . designed for UHF linear and large-signal amplifier applications. • 0.5 W, 870 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON Specified 12.5 Volt, 870 MHz Characteristics —	OCR Scan	MHW808 IS22I MRF559 j353 transistor j353 j353 transistor TRANSISTOR J408 j361 MHW808	PDF
s-parameter 2N3866A Abstract: mrf571 S-parameter 2N5179 Contextual Info: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz	Original	MRF4427, MRF3866 200MHz MRF545 MRF544 s-parameter 2N3866A mrf571 S-parameter 2N5179	PDF
2N3866 Abstract: Transistor 2N3866 RF 2N3866 2n3866a 2N3866 application note 2N3866 equivalent mrf555 BFR91 parameter S data 2n3866 low cost BFR90 transistor Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics	Original	2N3866 2N3866A To-39 28Vdc BFR90 MRF545 MRF544 2N3866/2N3866A Transistor 2N3866 RF 2N3866 2n3866a 2N3866 application note 2N3866 equivalent mrf555 BFR91 parameter S data 2n3866 low cost BFR90 transistor	PDF
MRF517 Abstract: VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA	Original	MRF517 To-39 MRF517 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2N5109 To-39 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179	PDF
2n4427 MOTOROLA Abstract: motorola 2N4427 2n4427 MSC1301 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA	Original	2N4427 To-39 MRF4427, MSC1301 2n4427 MOTOROLA motorola 2N4427 2n4427 Transistor 2n4427 2N3866 MOTOROLA 2N4427 equivalent MOTOROLA 2N5179 MOTOROLA SELECTION NPN Transistor output 10 w MRF559	PDF

Contextual Info: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF555 MRF545 MRF544	PDF
2N4427 Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607 Contextual Info: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF557 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607	PDF
S-parameter 2N5179 Abstract: s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866 MRF4427 Contextual Info: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz	Original	MRF4427, MRF3866 200MHz MRF559 MRF904 MRF4427 S-parameter 2N5179 s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866	PDF
2N4427 equivalent bfr91 Abstract: 13 6 npn 2N4427 equivalent transistor bfr96 transistor BFR91 2N5109 2N5179 BFR90 transistor BFR96 mrf5812 equivalent Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB	Original	MRF555 BFR90 MRF545 MRF544 MSC1316 2N4427 equivalent bfr91 13 6 npn 2N4427 equivalent transistor bfr96 transistor BFR91 2N5109 2N5179 BFR90 transistor BFR96 mrf5812 equivalent	PDF
Contextual Info: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF557 MRF545 MRF544	PDF
mrf571 Abstract: 2N3866 Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2N3866 2N3866A To-39 28Vdc MRF545 MRF544 mrf571	PDF
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB	Original	MRF557	PDF
mrf555 Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB	Original	MRF553 BFR91 BFR90 MRF545 MRF544 MRF553 mrf555	PDF
2N5109 Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2N5109 To-39 Volta12, 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, 2N5109 transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor	PDF
RF 2N3866 Abstract: 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607 Contextual Info: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2N3866 2N3866A To-39 28Vdc Volta15 RF 2N3866 2N3866A Transistor 2N3866 2N4427 2N5179 2N6255 MRF4427 MRF553 MRF607	PDF

MRF559 V Search Results

MRF559 V Result Highlights (5)

MRF559 V Datasheets Context Search

motorola MRF559

mrf559 v

MRF559

MRF559

MRF559

MRF559

MRF553T

j353

s-parameter 2N3866A

2N3866

MRF517

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

2n4427 MOTOROLA

2N4427

S-parameter 2N5179

2N4427 equivalent bfr91

mrf571

mrf555

2N5109

RF 2N3866