MR826 DIODE Search Results

r821 diodes

Abstract: MR826 diode CR72 mr826 MR821 MR826 equivalent diode sg 5 ts MR822 mr820 motorola
Contextual Info: MOTOROLA SC DIODES/OPTO b4E b3b7S5S D OQflbmM TET •MOT? MR820 MR821 MR822 MR824 MR826 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MR822 and MR826 are Motorola Preferred Devices D o s ì ì ì 'i u m -s D a t a S h e e t FAST RECOVERY POWER RECTIFIERS SUBMINIATURE SIZE, AXIAL LEAD MOUNTED

DR820

Abstract: MR826 diode
Contextual Info: Looking For: MR820, MR821, MR822, MR824, MR826 Replacements? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP LEAD MOUNT FAST RECOVERY BUTTON DIODES MECHANICAL SPECIFICATION FEATURES

MR826 diode

Abstract: MR824 MR821 MR826 equivalent MR820 MR822 DR820-1A MR826 3501S
Contextual Info: Looking For: MR820, MR821, MR822, MR824, MR826 Replacements? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 35 AMP LEAD MOUNT FAST RECOVERY BUTTON DIODES MECHANICAL SPECIFICATION FEATURES

Contextual Info: FÂGOR MR820. MR826 Dimensions in mm. P-6 Plastic Voltage 50 to 600 V Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point, 4 mm. • High current capability

MR826

Abstract: MR821 MR826 diode MR820 MR822 MR824 MR826 equivalent MR-820
Contextual Info: MR820. MR826 5 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. 8.7 ± 0.3 59.5 ± 1 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

Contextual Info: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._

Contextual Info: MR820. MR826 5 Amp. Glass Passivated Fast Recovery Rectifier Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. 8.7 ± 0.3 59.5 ± 1 • Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point,

FA60R

Abstract: HVR062 MR820 MR826 3C63
Contextual Info: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._

D0201AE

Abstract: rm 826 FA60R L105 MR820 MR826 D0-201AE
Contextual Info: S7E D 34ST3BS 00007Mb 702 • F G R S MR820.MR826 FA60R ELECTRONICS Prñi'u-ÍH'ii1 ‘é^'j s ‘u. "* * Dimensions in mm. o P-6 Plastic Voltage 50 to 600 V. (X>| Q. Current 5.0 A. at 55°C. I ^7^-3 _ 59.5 nun._

M70X

Abstract: Fagor GP
Contextual Info: -57E D FAGOR BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,

GP 821

Abstract: Fagor GP diode FAG 50 MR820GP MR822 GP 826 MR824
Contextual Info: -57E D FAGOR BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,

MR826

Abstract: Fagor GP C5000/3300 HVR062 MR820GP
Contextual Info: -57E D BMS'ìBgS G D D O b ì b 357 • FGRS MKöidU-OP FAGOR MR826-GP FAGOR E L E C T R O N I C S Dimensions in mm. P-6 Plastic Voltage 50 to 600 V. Current 5.0 A. at 55 °C. • Glass passivated junction Mounting instructions • Fast Recovery Diodes 1. Min. distance from body to soldering point,

MR822

Abstract: mr821 MR826 MR824 A JR 3221 MR826 equivalent
Contextual Info: M MR820 MR821MR822 MR824 MR826 M O T O R O L A S U B M IN IA T U R E SIZE, A X IA L LEAD M O UNTED FAST REC O V ER Y POWER R E C TIF IE R S FAST REC OVERY POWER R E C TIF IE R S . . . designed f o r special a p p lic a tio n s such as d c p o w e r supplies,

RECTIFIER DIODES Motorola mr 820

Abstract: diode p6000 MR826 equivalent diode p6000 j MR821 MR822 MR826 p6000 diode Variac MR826 diode
Contextual Info: MR820,MR821,MR822, MR824.MR826 D a t a S h e e t FA S T R E C O V E R Y POWER R E C T IF IE R S SU BM IN IA TU R E S IZ E , A X IA L L E A D MOUNTED FA S T R E C O V E R Y POWER R E C T IF IE R S 50-600 V O LTS 5.0 A M PERES . . . designed for special applications such as dc power supplies,

Alpha

Abstract: SB200-SB210 MR756 SB200-SB21 SB500-SB510 MR824 mr750 MR752 MR751 1n5819 die db810
Contextual Info: DIOTEC ELECTRONICS CORPORATION 18020 HOBART BLVD. GARDENA, CA 90248 USA PH: 310-767-1052 FX: 310-767-7958 email: sales@diotec-usa.com Web Site: www.diotec-usa.com 05 November 2009 DIOTEC ELECTRONICS CORP. - VALID PART NUMBER LIST New products have been added! These products are replacements for ON Semiconductor's1 lead mount button diodes MR750, MR751, MR752, MR754, MR756 see DR750-DR756 series

SB550 1n5402

Abstract: BY2000 P1000J p1000M p1000s BY1800 1N4002 1N4003 SB840 1N4005
Contextual Info: 3A 5A 5/8 A 12 A 7.5±0.1 ±0.5 62.5 7,5±0.1 62.5±0.5 Type 7.5 ±0.1 Type ±0.5 6.3±0.1 Type 62.5±0.5 5.1-0.1 Type +0.5 62.5 -2.5 3.9 62.5 Voltage [V] Diodes / Rectifiers Standard Recovery 2A 5/6 A 10.15 A 15/20 A 25 A 30 A Current 1N4001 BYW27-50 1N5391

je5740

Abstract: MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5740 M JE5741* M JE 5742* NPN Silicon Power Darlington Transistors ‘Motorola Pr#f*rr#d Dovte* The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications

MJE5742 equivalent

Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

MJE5740

Abstract: transistor 2n222 2n222 TRANSISTOR 1N493 2N222 2N2905 MJE5742 MR826 OF 2n222
Contextual Info: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:

2n222 TRANSISTOR

Abstract: 1N493 2N222 MJE5740 MJE5740G MJE5742 MJE5742G MR826
Contextual Info: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • Pb−Free Packages are Available*

2n2222 npn bipolar junction

Abstract: 2N2905 MOTOROLA motorola transistor ignition MJE5740-D MJE5742 2N2905 equivalent 2N2905 MOTOROLA datasheet data sheet book TRANSISTOR 2N2222 2n2222 transistor to 92 MR826 diode
Contextual Info: MOTOROLA Order this document by MJE5740/D SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741 * MJE5742 * NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications

transistor 2n222

Abstract: MJE5742G MJE5740 1N493 2N222 MJE5740G MJE5742 MR826 of diode 2n222 1K68
Contextual Info: MJE5740G, MJE5742G NPN Silicon Power Darlington Transistors The MJE5740G and MJE5742G Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant*

2n222 TRANSISTOR

Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

1N493

Abstract: transistor 2N222
Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS