MQ 131 Search Results

Contextual Info: G EN ERAL SPECIFICATIONS: MECHANICAL: INSERTION / EXTRACTION FORCE .65Kg - 3Kg. LIFE TEST-5 0 0 0 CYCLES. ELECTRICAL: CONTACT RESISTANCE: DCR ,1A INITIAL TEST: 30 mQ AFTER TEST: 60 mQ INSULATION RESISTANCES 100 MQ @ 500 VDC @ 90 - 95% RH, 40°C WITHSTANDING VOLTAGE: 500V/AC FOR ONE MINUTE.

Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode TrenchMOS transistor array SYMBOL FEATURES • • • • • PHN70308 QUICK REFERENCE DATA 30 mQ isolation transistor 80 mQ spindle transistors TrenchMOS technology Logic level compatible

MQ 6 SENSOR pin diagram

Abstract: MQ 6 SENSOR MQ 6 gas sensor J5800-002 MQ-FW1-01 MQ-FWAR2-DC12-24V push switch 6 leg plywood MQ-FWAR1-DC12-24V MQ-FWCR1-DC12-24V
Contextual Info: 200-206/MQ-FW 0.6.10 12:46 Page 1 TRIGONOMETRIC AREA REFLECTIVE OPTICAL FIBER PHOTOELECTRIC SENSORS MQ-FW Series Ratchet mechanism with the threeturn adjuster equipped with the indicator • The three-turn adjuster allows fine adjustment of the detectable distance.

E1751E20

Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
Contextual Info: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features

Diode D25 N10 P

Abstract: Diode D25 N10 R
Contextual Info: p V DSS MegaMOS FET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100V ^D25 DS on 67 A 25 mQ 75 A 20 mQ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T j = 25“ C to 150°C 100 V V«, ^ 100 V Vos v GSM Continuous ±20 V T ransient ±30

50N20

Abstract: 42N20 IXTH42N20
Contextual Info: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200

42n20

Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083
Contextual Info: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family

MQ-131

Abstract: MQ 6 gas sensor AND PIN CONFIGURATION MQ 2 sensor MQ131 MQ 9 sensor MQ 6 SENSOR gas detector MQ 2 gas sensor AND PIN CONFIGURATION MQ 131 MQ 6 gas sensor
Contextual Info: TECHNICAL DATA MQ-131 GAS SENSOR FEATURES Fast response and High sensitivity Stable and long life Simple drive circuit Wide detecting range APPLICATION They are used in air quality control equipments for buildings/offices, are suitable for detecting Of O3 .

Contextual Info: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

MQ-W70A-DC12-24V

Abstract: MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W20C-DC12-24VEM MQ-W20A-DC12-24V photoelectric through beam sensor circuit diagram MQ-W3C-DC12-24VEM MQ-W70C-DC12-24V triangulation position sensitive device
Contextual Info: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

position sensitive device

Abstract: MQ-W20C-DC12-24VEM MQ-W70A-DC12-24V MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W3CR-DC12-24V MQ-W20 MQ-W20A-DC12-24V MQ-W3A-DC12-24V MQ-W3A-DC12-24VEM
Contextual Info: MQ-W Series TRIPLE BEAM TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

Laser InP

Abstract: 1310nm photodiode
Contextual Info: LD-0032 AFONICS Performance Highlights 1310nm DFB Laser Diode - 3.0mW into 9/125µm fibre available - 1310nm InGaAsP/InP DFB Laser Diode -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum (MQW activ tive lay - Laser diode electrically isolated from monitor photodiode

Afonics

Abstract: LD-0001
Contextual Info: LD-0001 AFONICS Performance Highlights 1310nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum

Contextual Info: WB MR SERIES MINI SIZE PUSH BUTTON SW ITCH Feature mini size SPST, momentary function Application hearing aid hand-held device ► SPECIFICATIONS SWITCH SPECIFICATIONS POLE - POSITION Momentary action , SPST CONTACT RATING 3 V DC, 100 mA 150 mQ MAX. 1.5 V DC; 100 mA ,

philips resistor 2322

Abstract: resistor 2322 series ATIC 91
Contextual Info: A — /9-05T Philips Components Product Specification Power Resistor Chip Size 1218 5% FEATURES Reduced size of final equipment 2322 735 QUICK REFERENCE DATA Resistance Range 1 fl to 1 MQ; E24 Series Lower assem bly costs Resistance Tolerance ±5% Higher com ponent and equipm ent

Contextual Info: LD-0003 AFONICS Performance Highlights 1310nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum

GE4F

Abstract: Mono tft PC40R MediaQ GE-80 Hitachi DSA002714
Contextual Info: MQ-100/HD64464 LCD/CRT 2D Graphics Subsystem Data Book Version 1.09 August 1998 Preliminary Product Information Copyright Notice Copyright 1998 MediaQ, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by MediaQ, Inc. You may not reproduce, transmit, transcribe, store in a retrieval system, or translate

S-5412

Contextual Info: COULD I N C / GOULD A M I MQ E D MDSSTlb 001313 S 1 IA M I •> GOULD 12-Bit, 1MHz SelfCalibrating A/D Converter A M MI.eSemiconductors Preliminary Data Sheet S5412 Features General Description • Monolithic CMOS Sampling ADC On-Chip Track and Hold Amplifier

ci 555

Abstract: ci555 C.I.555
Contextual Info: Advanced Technical Information HiPerFAST IGBT IXGN 200N60B CES ^C25 VCE sat Test Conditions Symbol Maximum Ratings SOT-227B, miniBLOC V CES Tj = 25° C to 150° C 600 V Vw CGR Tj = 25° C to 150eC; RGE = 1 MQ 600 V V GES Continuous ±20 V v GEM Transient

Contextual Info: P a t c h C o rd s Nominal diameter Withdraw. force 4 mm Rated current 24 A 4 mm | Contact resistance Type Part No. 0.2 mQ LK 415 21.1900 25 cm Highly flexible patch cord with 4 mm (.160 in) dia. MC -Multilam plugs with 4 mm (.160 in) dia. in-line socket.

Contextual Info: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol

si6045

Contextual Info: BHXYS Advanced Technical Information Hi PerFAST IGBT IXGK 120N60B IXGX 120N60B V CES ^C25 V CE sat Symbol Test Conditions Maximum Ratings T j = 25° C to 150° C T,J = 25° C to 150° C; FL. = 1 MQ üb 600 600 V V Continuous Transient +20 ±30 V V L.

31053A2

Abstract: BST45 17331A2 BSA45 30504A2 bsr45
Contextual Info: re c tifie r diodes discs D isc D evices v TO @ T VJ rT @ T vj RthQ-c pth c-hs) T v, @ T vl (kA) (A2sx103) (V) (mQ) (°C/W) fC/W ) (•C) 1205 9 405 0.75 0.25 0.07 0.02 175 11120t+ 6010 6639 17500 37.4 51.5 162 7000 8490 84500 0.6 0.6 0.6 0.872 0.0514 0.0225

IXYS DS 145

Contextual Info: PIXYS_ MegaMOS FET IXTH/IXTM 67N10 IXTH / IXTM 75N10 p v DSS ^D25 100 V 100 V 67 A 75 A DS on 25 mi] 20 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj =25°C to150°C 100 V VDQB T j = 25° C to 150° C; RGS= 1 M il 100 V VGS