MQ 131 Search Results

MQ 6 SENSOR pin diagram

Abstract: MQ 6 SENSOR MQ 6 gas sensor J5800-002 MQ-FW1-01 MQ-FWAR2-DC12-24V push switch 6 leg plywood MQ-FWAR1-DC12-24V MQ-FWCR1-DC12-24V
Contextual Info: 200-206/MQ-FW 0.6.10 12:46 Page 1 TRIGONOMETRIC AREA REFLECTIVE OPTICAL FIBER PHOTOELECTRIC SENSORS MQ-FW Series Ratchet mechanism with the threeturn adjuster equipped with the indicator • The three-turn adjuster allows fine adjustment of the detectable distance.

50N20

Abstract: 42N20 IXTH42N20
Contextual Info: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200

42n20

Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083
Contextual Info: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family

Contextual Info: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

MQ-W70A-DC12-24V

Abstract: MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W20C-DC12-24VEM MQ-W20A-DC12-24V photoelectric through beam sensor circuit diagram MQ-W3C-DC12-24VEM MQ-W70C-DC12-24V triangulation position sensitive device
Contextual Info: MQ-W SERIES Triple Beam Trigonometric Area Reflective Photoelectric Sensors Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

position sensitive device

Abstract: MQ-W20C-DC12-24VEM MQ-W70A-DC12-24V MQ 6 gas sensor MQ-W20C-DC12-24V MQ-W3CR-DC12-24V MQ-W20 MQ-W20A-DC12-24V MQ-W3A-DC12-24V MQ-W3A-DC12-24VEM
Contextual Info: MQ-W Series TRIPLE BEAM TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS Very accurate detection by triple beam triangulation sensing method in a compact package. Environmental resistance Immersion protected construction equivalent to IEC IP67 High speed detection: Max. 2 ms

Contextual Info: WB MR SERIES MINI SIZE PUSH BUTTON SW ITCH Feature mini size SPST, momentary function Application hearing aid hand-held device ► SPECIFICATIONS SWITCH SPECIFICATIONS POLE - POSITION Momentary action , SPST CONTACT RATING 3 V DC, 100 mA 150 mQ MAX. 1.5 V DC; 100 mA ,

GE4F

Abstract: Mono tft PC40R MediaQ GE-80 Hitachi DSA002714
Contextual Info: MQ-100/HD64464 LCD/CRT 2D Graphics Subsystem Data Book Version 1.09 August 1998 Preliminary Product Information Copyright Notice Copyright 1998 MediaQ, Inc. ALL RIGHTS RESERVED. This manual is copyrighted by MediaQ, Inc. You may not reproduce, transmit, transcribe, store in a retrieval system, or translate

Contextual Info: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol

Contextual Info: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500

15n60

Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60
Contextual Info: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C

25N100A

Contextual Info: nixYS Lo w Vce mi ig b t High Speed IGBT IXSH/IXSM25N100 IXSH/IXSM 25 N100A v* C E S ^C 25 vv C E (s a t) 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Test Conditions Maximum Ratings VCES Tj - 25°C to 150°C 1000 V v CGR v GES v GEM T, = 25°C to 150°C; RGE = 1 MQ

SN74ACT8832

Contextual Info: • 50-ns Cycle Time • Low -P ow er EPIC CMOS • Three-Port I/O A rch ite ctu re • 64-W ord by 3 6 -B it Register File • S im ultaneous ALU and Register Operations • C onfigurable as Quad 8-B it or Dual 16-B it Single Instruction, M ultiple Data Machine

UP050CH101

Abstract: CE400 UP050B103 p050y ep050 UP050CH221 marking s350 dd0006 UP050CH220J
Contextual Info: T v - WU ' J — ' í7 H > x > 1í' AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. -2 5 ~ + 8 5 °C L ' g S t 5 B ? o aq < 7 » í f c f r ' ñ J i É V1F£<, n % k ® & T y 7 , £ j* —.X feiÄ'J'' • C la s s 1 p n li[l]iS D S M i$ 'ttiS iE S t> ')i|> ^ IS ^ t4 < D S S ;'ib o B,

da152

Abstract: 74as895 1/tic 2250
Contextual Info: SN54AS895, SN74AS895 8 BIT M EM O R Y AD D R ESS G ENERATORS NOVEMBER 1 9 8 5 -R E V IS E D APRIL 1 9 8 6 • • ■ • I I • • • S ig n, C arry O u t, O v e rflo w , and Z e ro -D e te c t and O u tp u ts • E x c es s -3 BCD A rith m e tic 1 3 A rith m e tic and Logic Functions

TP535

Abstract: RD3153 hbag tic154 MP21D M722 MP63 fuse OD80 WQ MITAC schematic MX C532
Contextual Info: REVISION TITLE R00 BLOCK DIAGRAM HISTORY DESIGN FOR EVT 1.Change R651,653 from 0.33u to lu for Audio CPU-UPGA2 1 2.Remove R662 ami Add R648 for Geyserville CPU-uPGA2 (2) ROA M722 Schematic ROB BANISTER (1) BANISTER (2) CLOCK SYNTHERISZER- ICS9248-101 3.Change R651 R653 form 6.8k to 0 and Add C194,C635,CÓ36 for reduce

tic 2250

Abstract: 74AS887 1/triac tic 2250 S-8871 74AS887-1 rJ17
Contextual Info: 1 SN54AS887, SN74AS887 8 BIT PROCESSORS i • STL-AS Technology • Parallel 8 -Bit ALU w ith Expansion Inputs and Outputs • 13 Arithm etic and Logic Functions • 8 • 4 Instructions th at Manipulate Bits • Add and Subtract Immediate Instructions •

HA-7712

Abstract: HA-7712A 131 8pin
Contextual Info: - 131 - HA-7712 BiMOS mWm., HARRIS m 150 ß Atyp # eSäSfätEEISSI: +4-— 1-16V HA-7712B m « Ta=25°C • f t t lf c DCiNfti y it v je RL=100k # - V SÄ> i><DAJ]MEiWM •fe ft » Vs-±5V K • v — t. J I fi fa / & iS A m O U T L IN E D R A W IN G 8-PIN M INID IP

6S32B

Contextual Info: 6C32B TpHOA nOBblIUCHHOÌf HaAeîKHOCTH Triode of improved reliability The 6C32B triode of improved relia b ility is designed for amplification of low-frequency volt­ age. CTOTbl. KOHCTpyKTHBHO TpHO^bl IIOBblllieHHOH Ha^e^KThe 6C32B triodes of improved reliability are

regulateur de tension

Abstract: SELF DE CHOC sgs Thomson Thyristor MQ-52 inductivity lt 744
Contextual Info: Würth Elektronik GmbH & Co. KG Verbindungstechnik Riedenstraße 16 D-74635 Kupferzell Toroidal Line Chokes WE-SI Self de choc toriques WE-SI • ideal for IC’s from National Semiconductor LM Linear Technology (LT) Maxim • low leakage and minimal acoustic noise since a toroidal core

LA 7670

Abstract: POWER Transformator 50 kv A28-14W telefunken tubes
Contextual Info: Netzröhre för GW-Heizung jHdirakt gehabt DC-AC-heating indirectly heated A 2 8 -1 4 W TELEFUNKEN • fc fc fc ■ W 11 " 11 " ohne lonenfalle TV-picture tube without Ion-Trap Vorläufige technische Daten * Tentative data Rechteckige Fernseh-Bildröhre ohne lonenfalle, elektrostatische Fokussierung,

Contextual Info: CAPACITORS •UL/CSA Recognized Type for Antenna-Coupling CR NETWORKS CERAMIPEC5 Standard No. Part Number UL1414 C22.2 No.O. No.1 B2R131C131RD-DM -121 MF -141 MG B2R131C271RD-DM-121 MF -141 MG B2R131C471RD-DM-121 MF -141 MG • Resistance Circuit Capacitor

Contextual Info: S i GEC P L E S S E Y A U G U ST « 9 5 SEMI CO NDUC TOR S DS4167-2.3 DS1104SG RECTIFIER DIODE KEY PARAMETERS VRRM 3000V U> 1315A Ifsm 20000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. ■ Welding. ■ Battery Chargers.

Philips 2222 056 58103 capacitors

Abstract: 057 58689 Philips capacitor 056 PSM-SI Philips capacitor 056 Philips 2222 050 58103 capacitors Philips 2222 050 56472 capacitors Philips electrolytic 132 philips 154 series aluminium 050 57223 PHILIPS capacitors 056
Contextual Info: Philips Components Product specification Aluminium electrolytic capacitors Power Standard Miniature Snap-in 056/057 PSM-SI FEATURES • Polarized aluminium electrolytic capacitors, non-solid • Large types, minimized dimensions, cylindrical aluminium case, insulated with a blue sleeve