AFONICS Search Results

Afonics Fibreoptics

Abstract: 1550nm laser diode FXP0011 IEC-825 laser diode 15mw 1550nm FXP0012
Contextual Info: FXP0012 AFONICS - 1550nm DFB Laser - 9/125µm fibre pigtail - FC/APC connector - Typical fibre output power of 1.5mW - Laser diode is DC Electrically isolated from housing - Operating temperature 0°C to +85°C Performance Highlights LIMITING VALUES SYMBOL

Contextual Info: LXP0060 AFONICS - 1310nm FP laser - 9/125 µm pigtailed package 9/125µ - FC/PC connector P r eliminar p ecific ation eliminaryy SSp ecification - Minimum fibre output power of 250 µW 250µ - Electrically isolated housing - Operating temperature -30°C to +75°C

PIN photodiode responsivity 1550nm 1.1

Abstract: photodiode responsivity 1550nm 2 Photodiode 1550nm bandwidth PIN Photodiode 1550nm Photodiode 1550nm bandwidth Afonics Fibreoptics LPM0032 LPM0033 PIN Photodiode 1550nm 1310nm photodiode InGaAs Photodiode 1550nm
Contextual Info: LPM0032 AFONICS Performance Highlights - 1550nm Tx 1310nm Rx WDM - 9/125µm fibre stub receptacle - FC/PC receptacle - 1550nm FP Laser diode minimum 1.2mW into 9/125µm fibre - InGaAs photodiode minimum responsivity 0.45A/W - Optical crosstalk better than –50dB

pfp830

Abstract: DXR0074 Afonics Fibreoptics
Contextual Info: DXR0074 AFONICS Performance Highlights - 850nm LED - ST receptacle - Minimum 50µW into 62.5/125µm fibre at 100mA drive current - Bandwidth > 50MHz - Operating temperature –40 to +85ºC LIMITING VALUES Continuous forward current see note 1 Reverse voltage

Afonics

Abstract: LD-0001
Contextual Info: LD-0001 AFONICS Performance Highlights 1310nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum

45-65mA

Contextual Info: LD-0014 AFONICS Performance Highlights 785nm Laser Diode - >1.8mW into 9/125µm fibre available - Operating temperature -10ºC to +60ºC - Low droop characteristics - All options operable from a single 5V supply L I M I T I N G V A LU E S S Y M B OL V A LU E

Contextual Info: R A -0011 AFONICS - InGaAs PIN/TIA - 1GHz minimum bandwidth - Differential output and AGC -R esp onsivit y ttypic ypic ally 3300 V/W Resp esponsivit onsivity ypically - Typic al sensitivit y -28dBm ypical sensitivity -M inimum o v er load -3dBm Minimum ov

Contextual Info: LD-0005 AFONICS Performance Highlights 1550nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2 Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum

PXR0110

Abstract: Afonics Fibreoptics
Contextual Info: PXR0110 AFONICS Performance Highlights - Si PIN diode - ST receptacle - 500MHz bandwidth - Responsivity typically 0.30A/W at 850nm with 50/125µm fibre - Operating temperature –40ºC to +85ºC - Storage temperature –40ºC to +85ºC LIMITING VALUES Continuous reverse voltage

Afonics Fibreoptics

Contextual Info: PXR0012 AFONICS - InGaAs PIN Diode - Precision machined housing - FC/PC receptacle - Typical responsivity 0.8A/W - Maximum dark current of 2nA - Bandwidth of 1.5GHz - DC electrical isolation of the photodiode case from the receptacle Performance Highlights

Contextual Info: LD-0003 AFONICS Performance Highlights 1310nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum

Contextual Info: R X-0010 AFONICS - Low cost Si PIN Diode - 50MHz bandwidth -R esp onsivit y ttypic ypic ally 0.55A/W Resp esponsivit onsivity ypically - Typic al dar ypical darkk cur currr en entt 0.1nA Per manc e Highligh ts erff or ormanc mance Highlights LIMITING VALUES

1550nm laser diode

Abstract: Laser InP LD-0004 PIN Photodiode 1550nm PF3000 Afonics Fibreoptics
Contextual Info: LD-0004 AFONICS Performance Highlights 1550nm DFB Laser Diode - 3.0mW into 9/125µm fibre available - 1550nm InGaAsP/InP DFB Laser Diode -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum (MQW activ tive lay - Laser diode electrically isolated from monitor photodiode

810nm

Abstract: TBA 60 LE-0005
Contextual Info: LE-0005 AFONICS High Power 810nm LED Preliminary specification Performance Highlights - Typic ally 60µW in e aatt IF=100mA ypically intto 50/125µm fibr fibre - Peak wavelength at 810nm - Bandwidth of 70MHz L I M I T I N G V A LU E S S Y M B OL V A LU E UNI T S

VXR0

Abstract: VXR0022 RSLD
Contextual Info: VXR0022 - 850nm VCSEL - ST receptacle - PCB mounting - 1.25Gb/s AFONICS Preliminary Specification Performance Highlights - Minimum 600µW into 50/125µm fibre - Operating temperature range 0ºC to +70ºC - Device electrically isolated from receptacle LIMITING VALUES

RX-0005

Contextual Info: RX-0005 AFONICS - InGaAs PIN Diode - High bandwidth - Responsivity typically 0.8A/W at 1300nm - Maximum dark current of 5nA - Bandwidth of 1.5GHz Performance Highlights LIMITING VALUES SYMBOL VALUE UNITS Continuous reverse voltage VR 30 V Forward current IF

860nm

Abstract: LE-0009
Contextual Info: LE-0009 AFONICS - 860nm LED - High p er manc e per erff or ormanc mance - General purpose - Typic ally 45µW in e aatt IF=60mA ypically intto 50/125µm fibr fibre - Peak wavelength at 860nm - Bandwidth of 70MHz Performance Highlights L I M I T I N G V A LU E S

Laser InP

Abstract: 1310nm photodiode
Contextual Info: LD-0032 AFONICS Performance Highlights 1310nm DFB Laser Diode - 3.0mW into 9/125µm fibre available - 1310nm InGaAsP/InP DFB Laser Diode -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum (MQW activ tive lay - Laser diode electrically isolated from monitor photodiode

Afonics Fibreoptics

Abstract: PIN 1300nm
Contextual Info: R X-0013 AFONICS - InGaAs PIN Diode - 1GHz bandwidth - High responsivity -R esp onsivit y minimum 0.8A/W aatt 1300nm Resp esponsivit onsivity -M aximum dar Maximum darkk cur currr en entt of 2nA - Op er a ting ttemp emp er a tur e -40°C tto o +85°C Oper

PHOTODIODE PD 20

Abstract: fabry perot 1550nm
Contextual Info: LD-0006 AFONICS Performance Highlights 1550nm FFabr abr yP er ot LLaser aser D io de abry Per erot Dio iode - Over 1.5mW into 9/125µm fibre available - Designed for 1.2 Gbit/s data rates -M ulti-Q uan tum Well MQ W ac tiv e la y er Multi-Q ulti-Quan uantum

1300nm

Contextual Info: R X-0018 AFONICS - InGaAs PIN Diode - Large area - High responsivity -R esp onsivit y ttypic ypic ally 0.8A/W aatt 1300nm Resp esponsivit onsivity ypically -M aximum dar Maximum darkk cur currr en entt of 10nA - Op er a ting ttemp emp er a tur e -40°C tto

Contextual Info: R A -0022 AFONICS - InGaAs PIN/TIA - Differential output and AGC - Dynamic range > 36dB -R esp onsivit y ttypic ypic ally 35 mV/ µW aatt 1300nm Resp esponsivit onsivity ypically mV/µ -B and width 155Mb/s Band andwidth -M inimum o v er load 0 dBm Minimum

LE-0002

Abstract: 1320nm LED Afonics Afonics Fibreoptics
Contextual Info: LE-0002 AFONICS - High power 1320nm LED - Ideal for local area networks - Minimum 50µW into 62.5/125µm fibre at IF=100mA - Peak wavelength at 1320nm - Bandwidth of 125MHz Performance Highlights L I M I T I N G V A LU E S S Y M B OL V A LU E UNI T S IF 150

PXR0108

Abstract: Afonics Fibreoptics
Contextual Info: PXR0108 AFONICS Performance Highlights - Si PIN diode - ST receptacle - 70MHz bandwidth - Responsivity typically 0.62A/W at 850nm with 62.5/125µm fibre - Operating temperature –40ºC to +100ºC - Storage temperature –40ºC to +100ºC LIMITING VALUES Continuous reverse voltage