MPSH10 S PARAMETERS Search Results

pulse h1251

Abstract: H1251 MMBTH10 MPSH10 TRANSISTOR C 3223 MPS-H10 national MPSH10 s parameters
Contextual Info: MPSH10 I MMBTH10 & D iscrete P O W E R & S ig n a l T echnologies National S e m i c o n d u c t o r " MPSH10 NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 pA to 20 mA range in common

mpsh10

Abstract: MPSH10 fairchild transistor MPSH10 s parameters TF135 MMBTH10 Spice Model MPS-H10 BF308 1358p
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C C E E TO-92 B SOT-23 B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 fairchild transistor

Abstract: MMBTH10 Spice Model MPS-H10 MMBTH10 MPSH10 TRANSISTOR C 3223 1358p
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10

Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

TRANSISTOR C 3223

Abstract: MPSH10 MMBTH10 Spice Model NPN power transistor spice MMBTH10
Contextual Info: N MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSH10 S parameters

Contextual Info: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

MPSH10

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

transistor polar

Abstract: mpsh
Contextual Info: MPSH10/11 NPN EPITAXIAL SILICON TRANSISTOR VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta= 25 °C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 °C ) Derate above 2 5 “ C Collector Dissipation (Tc= 2 5 °C )

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

MPSH10 s parameters

Abstract: MPSH10
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package B EC VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VCEO

MPSH10 fairchild transistor

Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

CBVK741B019

Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

Contextual Info: SAMSUNG ELECTRONICS INC 42E D MPSH10/11 Hi ?*Jb414H 000^072 4 E3SÎ1GK NPN EPITAXIAL SILICO N TRANSISTO R VHF/UHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta= 2 5 ° C )

MPSH10 s parameters

Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

2N5222

Abstract: 2n3544 2n918 die 2N918 motorola SILICON SMALL-SIGNAL DICE MPSH10 die 2n917 die MPS-65-48 MPS-6539 2N917
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DF|t.Bb7aS5 ODBTTTS 3 DIODES/OPTO 3^C 37972 D •r-~3/w<r SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C918 DIE NO. — NPN LINE SOURCE — DSL75 & This die provides performance similar to that of the following device types:

MMBTH10LT1

Abstract: MPSH10 MPSH11 jb transistor GFB30 MPSH10 S parameters
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

MPSH10 s parameters

Abstract: MMBTH10LT1 MPSH10 MPSH11
Contextual Info: MMBTH10LT1 NPN Silicon VHF/UHF Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage VCBO 30 Vdc Collector Emitter Voltage VCEO 25 Vdc Emitter Base Voltage VEBO 3 Vdc PD 225 mW 1.8 mW / C (1) o Total Device Dissipation FR-5 Board , TA=25 C

CLC411A

Contextual Info: CLC411 N a tio n a l Semiconductor Comlinear CLC411 High-Speed Video Op Amp with Disable General Description Features The Comlinear CLC411 combines a state-of-the-art complementary bipolar process with Comlinear's patented current-feedback architecture to provide a very high-speed op amp operating from

CLC411

Abstract: CLC411A8B CLC411AJE CLC411AJP CLC411AMC if amplifier 5mhz CLC411A
Contextual Info: N CLC411 High-Speed Video Op Amp with Disable General Description Features The CLC411 combines a state-of-the-art complementary bipolar process with National’s patented current-feedback architecture to provide a very high-speed op amp operating from ±15V supplies.

CLC411

Abstract: CLC411A8B CLC411AJE CLC411AJP CLC411AMC mpsh81 model MPSH10 small amplifier CLC411A
Contextual Info: N CLC411 High-Speed Video Op Amp with Disable General Description Features The CLC411 combines a state-of-the-art complementary bipolar process with National’s patented current-feedback architecture to provide a very high-speed op amp operating from ±15V supplies.

Circuit diagram of Regulated Power supply 6V 5A

Abstract: CLC411 CLC411A8B CLC411AJE CLC411AJP CLC411ALC CLC411AMC MPSH81 professional noise gate schematics CLC411A
Contextual Info: N Comlinear CLC411 High-Speed Video Op Amp with Disable General Description Features The Comlinear CLC411 combines a state-of-the-art complementary bipolar process with Comlinear’s patented current-feedback architecture to provide a very high-speed op amp operating from

BC237

Abstract: MPSH10 502 mpsa42 npn transistor to-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO

rfm 1207-5

Abstract: 433,92 resonator RP1207-5 433.92 Mhz two-port saw resonator 133524 MPSH10 P1239 RF1172 rx1305 IC rp1102
Contextual Info: Low Power Components Short Form Catalog l Introduction l Selection Guide by Frequency Application l Master Index Sorted by Frequency l Master Index Sorted by Lid Symbol l Typical Radio Types l Superhet Receiver Example l RO Series l RP Series l RF Series l

SANSUI all circuit diagram

Abstract: bd 9777 2N3906 MOTOROLA pll for cb 10.240 MC2833D schematic sumida sansui amplifier transformer mic amplifier using ic 741 Sumida LC IF 455 khz MC13110FB
Contextual Info: Order this document by MC13110/D Universal Cordless Telephone Subsystem IC with Scrambler The MC13110 integrates several of the functions required for a cordless telephone into a single integrated circuit. This significantly reduces component count, board space requirements, and external adjustments. It is