MPSH Search Results

NPN RF Amplifier

Abstract: y-parameter MMBTH20 MPSH20 U407
Contextual Info: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A

MPSH17

Abstract: MPSH17G MPSH17RLRA MPSH17RLRAG Marking code mps
Contextual Info: MPSH17 Preferred Device CATV Transistor NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 15 Vdc Collector −Base Voltage VCBO 20 Vdc Emitter −Base Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for

2N1674

Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31

MPSH10P

Abstract: DSA003760
Contextual Info: MPSH10P 1.0 VCE=-10V VCE=-10V 175°C -55°C 0.8 100 VBE - Volts hFE -Gain 150 100°C 25°C 0.6 25°C 100°C 0.4 175°C -55°C 50 0.1 1 10 0.1 1 IC - (mA) IC - (mA) hFE v IC VBE(on) v IC 1500 VCE=10V f=100MHz 1000 10 100 500 0.1 1 10 100 E-Line TO92 Compatible

MPSH81

Contextual Info: MOTOROLA Order this document by MPSH81/D SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor MPSH81 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Value Unit v CEO -2 0 Vdc Collector-Base Voltage v CBO -2 0 Vdc

Contextual Info: MPSH20/MMBTH20 W A National Jim Semiconductor MPSH20 MMBTH20 Ih r ¡J TO- 236 SOT-23 TO-92 TL/G/10100-5 TL/G/10100-3 NPN RF Transistor Electrical Characteristics ta =25°c unless otherwise noted Parameter Symbol Min Typ Max Units O FF CH ARACTERISTICS V (BR)CEO

MMBTH24

Abstract: MPSH11 MPSH24
Contextual Info: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator

Contextual Info: ON Semiconductort CATV Transistor MPSH17 NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Base Voltage VCBO 20 Vdc Emitter–Base Voltage VEBO 3.0 Vdc PD 350 2.81 mW

MPSH10

Abstract: MMBTH10 Spice Model NPN power transistor spice y-parameter MMBTH10 TRANSISTOR C 3223 MPS-H10 MPSH10 s parameters
Contextual Info: MPSH10 MMBTH10 C E C E TO-92 SOT-23 B B Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

J551

Abstract: TS 4142 MPSH20 MPSH24 S1000 sc 4145 276MH 4142 TS I10M1 213M1
Contextual Info: .SAMSUNG SEM ICO NDUCTOR INC 14E D | TTbMlME 0007304 S J MPSH20 7^3/- NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current

SILICON SMALL-SIGNAL DICE

Abstract: DIE npn RF MPS-H04 MPSH04
Contextual Info: MOTOROLA SC Î D I O D E S / O P T O J ] 314 6 3 6 7 2 5 5 M O T O R O L A SC DE I b3ti?ESS D I O D E S / O P T O 0D 3fl0a0 34C 38020 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) MPSHC05 DIE NO. — NPN LINE SOURCE — DEL434 & This die provides performance similar to that of the following device types:

Contextual Info: MPSH20* M A XIM U M RATINGS Rating Symbol Value Unit v CEO v CBO v EBO 30 Vdc 40 V dc 4.0 Vdc Collector Current — C o n tin u o u s 'c 100 m Adc Total Device D issip ation C» T a Derate a b o v e 25°C PD 350 2.81 mW m W rc Total Device D issip atio n a T c = 25°C

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA CATV Transistor NPN Silicon MPSH17 COLLECTOR 3 Motorola Preferred Device 2 EMITTER CASE 29-04, STYLE 2 TO -92 TO-226AA MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage VC EO 15 Vdc C o lle c to r-B a s e Voltage

MPSH81

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor PNP Silicon MPSH81 COLLECTOR Motorola Preferred Device 3 1 BASE 2 EMITTER M AXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO -20 Vdc Collector-Base Voltage VCBO -20 Vdc Emitter-Base Voltage

SILICON SMALL-SIGNAL DICE

Contextual Info: SC -CDIODES/OPTO} motorola 6367255 MOTOROLA SC i4 DE | b3k72S5 GOBflDaM S | ~ <DIODES/OPTO 3<tC 3 8 0 2 4 D SILICON SMALL-SIGNAL TRANSISTOR DICE continued) MPSHC55 DIE NO. — PNP LINE SOURCE — DEL484 This die provides performance similar to that of the following device types:

BC237

Abstract: MPSH10 502 mpsa42 npn transistor to-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 25 Vdc Collector – Base Voltage VCBO

mpsh81 model

Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

MPS-H20

Abstract: npn, transistor, sc 107 b MV400 3 w RF POWER TRANSISTOR NPN
Contextual Info: MPSH20 / MMBTH20 MPSH20 MMBTH20 C C B E TO-92 B SOT-23 E Mark: 3L NPN RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 49. Absolute Maximum Ratings*

MPSH10 fairchild transistor

Abstract: MPSH10 MMBTH10 Spice Model transistor top mark 3E L transistor bel 100 CBVK741B019 F63TNR MMBTH10 PN2222N TRANSISTOR C 3223
Contextual Info: MPSH10 / MMBTH10 MPSH10 MMBTH10 C E C E TO-92 B B SOT-23 Mark: 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency

MPSA10

Abstract: MPSH10 mps h10
Contextual Info: MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage

CMPSH10

Contextual Info: ON Semiconductort VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25°C

MPSH17

Contextual Info: MPSH17 NPN Silicon Epitaxial Planar Transistor The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g