MPSA13 30 Search Results

MPSA13L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free

MPSA13L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Package Lead Free

mpsa13l

Abstract: mpsa13 MPSA13G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MPSA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V  ORDERING INFORMATION Order Number Package Lead Free

MPSA13L

Abstract: utc mpsa13
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR „ DESCRIPTION The UTC MPSA13 is a Darlington transistor. „ FEATURES * Collector-Emitter Voltage: VCES = 30V „ ORDERING INFORMATION Order Number Normal Lead Free

To92 transistor motorola

Abstract: MPSA13 MPSA14 motorola mpsa13
Contextual Info: MOTOROLA Order this document by MPSA13/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA13 MPSA14 * NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCES

MPSA13

Abstract: utc mpsa13
Contextual Info: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPSA13

Abstract: vbe 10v, vce 5v NPN Transistor utc mpsa13
Contextual Info: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. 1 FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Darlington transistor

Abstract: MPSA13 transistor 625
Contextual Info: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

mpsa13

Abstract: MPS-A13 MPSA14 MPS-A13-14
Contextual Info: MPSA13/14 MPSA13, 14 Darlington TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE 0.625 PCM: W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range

MPSA13

Abstract: PT 10000
Contextual Info: UTC MPSA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA13 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 625 mW 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MPSA13

Abstract: MPSA14 npn darlington motorola to92 To92 transistor motorola
Contextual Info: MOTOROLA Order this document by MPSA13/D SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA13 MPSA14 * NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCES

mpsa13

Abstract: mps-a13 mpsa14
Contextual Info: Philips Semiconductors Product specification NPN Darlington transistors FEATURES MPSA13; MPSA14 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 • High DC current gain (min. 10000). 2 base 3 em itter collector APPLICATIONS

Contextual Info: MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V

transistor mpsa 250

Abstract: transistor mpsa 13 equivalent mpsa14 MPSA13 MPSA14
Contextual Info: MPSA13 MPSA14 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC

MPSA14

Abstract: MPSA13
Contextual Info: MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous

K5001000

Contextual Info: ON Semiconductort MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc

Contextual Info: MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage

mpsa13 636

Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA

MPSA13G

Abstract: MPSA14 MPSA14G MPSA14RLRPG MPSA13 MPSA13RLRA MPSA13RLRAG MPSA13RLRM MPSA13RLRMG MPSA13RLRP
Contextual Info: MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating BASE 2 Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage

Contextual Info: ON Semiconductort MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 10

mpsa13

Contextual Info: ON Semiconductort MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 10 Vdc

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

kmpsa13

Abstract: KMPS-A13 MPSA13G MPSA13 MPSA13RLRA MPSA13RLRAG MPSA13RLRMG MPSA13RLRPG MPSA13ZL1G MPSA14
Contextual Info: MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage

MPSA13G

Abstract: MPSA14G MPSA13 MPSA13RLRA MPSA13RLRAG MPSA13RLRMG MPSA13RLRPG MPSA13ZL1G MPSA14 MPSA14RLRAG
Contextual Info: MPSA13, MPSA14 MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc