MPR-20 201 Search Results

MPC10

Abstract: mpc marking MARKING MPC MILR83401 MPC7 MPC 55 mpc7 resistor
Contextual Info: High Power Resistors Type MPC Series Type MPC Series Characteristics Electrical A range of non inductive thick film power resistors complementing the T0220 packaged MPR series 20 Watt heat sink styles , being vertically mounted and suitable to Resistance Values:

Contextual Info: HELP4 TM ALT6720 E800 Band 20 LTE Linear PAM Data Sheet - Rev 2.3 FEATURES • LTE Compliant • 4th Generation HELPTM technology • High Efficiency (LTE MPR = 0 dB): • 36 % @ POUT = +27.5 dBm • 23 % @ POUT = +16 dBm • 16 % @ POUT = +7 dBm ALT6720

ADSP-210xx

Abstract: IXI1222 IXI1688S ixthos 741G ADSP-2101 IXI1204 IXI1210 IXI1241 IXI1688P
Contextual Info: Ixthos, Inc., 741-G Miller Drive SE, Leesburg, VA 20175 phone 703 779-7800 fax (703) 779-7805 email ixthos@ixthos.com website: www.ixthos.com Ixthos has provided commercial-off-the-shelf (COTS) integrated hardware and software solutions for the Analog Devices floating point DSP family (ADSP210xx) since 1991. The

TQM7M9023

Abstract: marking NS05 HSPA Module Rel99 triquint tqm7m9023 Multiband RF Transceiver HSDPA power amplifier LTE transceiver Triquint PA LTE MMPA
Contextual Info: TQM7M9023 Data Sheet 5.0x7.5mm Multimode Multiband Power Amplifier MMPA (Quad-Band GSM / EDGE and Tri-band W/CDMA/HSPA+/LTE) Functional Block Diagram Features •            Quad-Band Linear GSM/EDGE UMTS B1 and B5/8 Input power controlled – GMSK and 8PSK

jj18

Abstract: B220J MPR11P MPR12P
Contextual Info: Micro-Porcelain Features M ultilayer Porcelain unencapsulated capacitors Two case sizes o f chips: 1.40mm 0.55“ ler*gth=width=thickness 2.79mm (.110") length=width, 2.59mm (.102“) thickn. Variety o f Surface Mount term inations: □ Silver-Palladium metatized CHIP

Contextual Info: EM47DM0888SBA Revision History Revision 0.1 May. 2011 -First release. May. 2011 1/39 www.eorex.com EM47DM0888SBA 1Gb (16Mx8Bank×8) Double DATA RATE 3 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.5V 0.075V. • All inputs and outputs are compatible with SSTL_15

EM47DM0888SBA

Contextual Info: EM47DM0888SBA Revision History Revision 0.1 May. 2011 -First release. Revision 0.2 (Oct. 2014) -Update package size to 8x10.5mm. Oct. 2014 1/39 www.eorex.com EM47DM0888SBA 1Gb (16Mx8Bank×8) Double DATA RATE 3 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.5V±0.075V.

Contextual Info: EM47EM0888SBA Revision History Revision 0.1 Oct. 2011 -First release. Revision 0.2 (Apr. 2012) - Package dimension change – delete 9 x 10.5 mm2, add 8 x 10.5 mm2. Apr. 2012 1/39 www.eorex.com EM47EM0888SBA 2Gb (32Mx8Bank×8) Double DATA RATE 3 SDRAM Features

Contextual Info: MPR Series Stackpole Electronics, Inc. Flameproof Metal Plate Resistor Features: • • • • Resistive Product Solutions Small size with high power ratio Low resistance values and low inductance Crimped leads keep circuit board temperatures cooler RoHS compliant / lead-free

EM47DM1688SBC

Contextual Info: EM47DM1688SBC Revision History Revision 0.1 Jan. 2013 -First release. Revision 0.2 (Feb. 2014) -Update DC current. Feb. 2014 1/38 www.eorex.com EM47DM1688SBC 2Gb (16Mx8Bank×16) Double DATA RATE 3 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.5V±0.075V.

triquint tqm7m9023

Abstract: TQM7M9023 LTE RF Multiband RF transceiver LTE EVDO Rev A Triquint PA LTE
Contextual Info: TQM7M9023 Data Sheet 5.0x7.5mm Multimode Multiband Power Amplifier MMPA (Quad-Band GSM / EDGE and Tri-band W/CDMA/HSPA+/LTE) Functional Block Diagram Features •            Quad-Band Linear GSM/EDGE UMTS B1 and B5/8 Input power controlled – GMSK and 8PSK

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM PRELIMINARY INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V

IS43TR16640

Abstract: DDR31866K IS43TR81280A IS46TR ac-175a 96-ball IS43TR16640A
Contextual Info: IS43TR16640A, IS43TR81280A 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION APRIL 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V            Refresh Interval:

IS46TR

Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Contextual Info: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        

Contextual Info: 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 EM47EM3288SBA Revision History Revision 0.1 May. 2012 -First release. Revision 0.2 (Feb. 2013) -Update ZQ pins description. May. 2012 1/38 www.eorex.com 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 EM47EM3288SBA 8Gb (32Mx8Bank×32) Double DATA RATE 3 Stack SDRAM

RIO 1R0

Abstract: RIO 1R5
Contextual Info: Micro-Porcelain JUL Series M P R Features M ultilayer Porcelain unencapsulated capacitors Two case sizes of chips: 1,40mm 0.55" length=width=thickness 2,79mm (.110") length=width, 2,59mm (.102") thickn. Variety of Surface Mount term inations: f l Silver-Palladium metalized CHIP

Contextual Info: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V      

EM47EM3288SBA

Contextual Info: EM47EM3288SBA Revision History Revision 0.1 May. 2012 -First release. Revision 0.2 (Feb. 2013) -Update ZQ pins description. Revision 0.3 (Apr. 2014) -Update tFAW. Apr. 2014 1/39 www.eorex.com EM47EM3288SBA 8Gb (32Mx8Bank×32) Double DATA RATE 3 Stack SDRAM

Contextual Info: EM47CM1688SBB Revision History Revision 0.1 Jun. 2012 -First release. Revision 0.2 (Feb. 2014) -Update DC current. Feb. 2014 1/39 www.eorex.com EM47CM1688SBB 1Gb (8Mx8Bank×16) Double DATA RATE 3 SDRAM Features Description • JEDEC Standard VDD/VDDQ = 1.5V±0.075V.

Contextual Info: IS43/46TR16128A, IS43/46TR16128AL, IS43/46TR82560A, IS43/46TR82560AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V      

Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM PRELIMINARY INFORMATION NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V

IS43TR85120A

Abstract: IS43TR16256AL IS46TR16256A IS46TR85120A is46tr16256
Contextual Info: IS43/46TR16256A, IS43/46TR16256AL, IS43/46TR85120A, IS43/46TR85120AL 512Mx8, 256Mx16 4Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •

Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       

IS43TR81280A

Abstract: 96-ball FBGA RON40pu
Contextual Info: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •