MPF930 TRANSISTOR Search Results

MPF960

Abstract: MPF990 MPF930 motorola MPF990
Contextual Info: MOTOROLA Order this document by MPF930/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF930 MPF960 MPF990 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 Unit Drain – Source Voltage VDS 35 60 90 Vdc

MTP12N10 pin configuration

Abstract: PK MUR1100 MTP12N10 MTP8P10 PD-135 IC 7403 IC 7403 datasheet mjw16010a AM503 MJE210
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in

MR918

Abstract: MTP12N10 two transistor flyback mje16 IRFD113 MJE16106 mtp25n06 AM503 MJE210 MPF930
Contextual Info: MOTOROLA Order this document by MJE16106/D SEMICONDUCTOR TECHNICAL DATA Designer's MJE16106  Data Sheet NPN Silicon Power Transistor Switchmode Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. • •

MTP12N10 pin configuration

Abstract: MTP12N10 P6302
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in

MTP12N10 pin configuration

Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

transistor mje13007 equivalent

Abstract: mtp8p mje13007 equivalent
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

Contextual Info: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state−of−the−art die

Contextual Info: ON Semiconductor BUH50 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state−of−art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications.

Contextual Info: ON Semiconductor MJE18006 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 100 WATTS The MJE18006 has an applications specific state−of−the−art die

BUL44

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductor BUL44 SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies

npn transistor 400 volts.10 amperes

Abstract: BUL 380
Contextual Info: BUL42D High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability The BUL42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable

MJE18002

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: ON Semiconductor MJE18002 * SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 50 WATTS The MJE18002 have an applications specific state–of–the–art die

Contextual Info: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110* M JW 16110* D esigner’s Data Sheet NPN Silicon Power Transistors ‘ Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.

Contextual Info: ON Semiconductor BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS The BUH51 has an application specific state−of−art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large

BUL44

Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features

BUH50

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50  Data Sheet Designer's SWITCHMODE NPN Silicon Planar Power Transistor POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS The BUH50 has an application specific state–of–art die designed for use in

1N5761

Abstract: marking code t1a BUL45 BUL45G MJE210 MPF930 MTP12N10 MTP8P10 MUR105 MUR150
Contextual Info: BUL45 NPN Silicon Power Transistor High Voltage SWITCHMODEt Series Designed for use in electronic ballast light ballast and in Switchmode Power supplies up to 50 Watts. Features • Improved Efficiency Due to: ♦ Low Base Drive Requirements (High and Flat DC Current Gain hFE)

mje18008

Abstract: MJE/MJF18008
Contextual Info: ON Semiconductor MJE18008 * MJF18008 * SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications *ON Semiconductor Preferred Device POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS The MJE/MJF18008 have an applications specific state−of−the−art

Contextual Info: ON Semiconductor BUH100 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 10 AMPERES 700 VOLTS 100 WATTS The BUH100 has an application specific state−of−art die designed for use in 100 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large

AN719

Abstract: transistor mje13007 equivalent on semiconductor AN719 AN569 mje13007 equivalent on semiconductor AN951 CMJE13007 MJE13007* transistor
Contextual Info: ON Semiconductor MJE13007 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switchmode applications such as Switching

MJE18006G

Abstract: MJE18006 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.

Contextual Info: ON Semiconductor BUH150 SWITCHMODEt NPN Silicon Planar Power Transistor POWER TRANSISTOR 15 AMPERES 700 VOLTS 150 WATTS The BUH150 has an application specific state−of−art die designed for use in 150 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large

369D

Abstract: BUD42D BUD42DT4 MPF930 MTP8P10 MUR105
Contextual Info: BUD42D High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability http://onsemi.com 4 AMPERES 650 VOLTS, 25 WATTS POWER TRANSISTOR The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic