MPF102
Abstract: mpf102 equivalent equivalent to MPF102 Transistors MPF102 circuit application MPF102 Transistor MPF102 JFET MPF-102 mpf102 application note
Contextual Info: MOTOROLA Order this document by MPF102/D SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc
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mpf102/dmpf102226aampf102 equivalent+6equivalent to mpf102 transistorsmpf102 circuit applicationmpf102 transistormpf102 jfetmpf-102mpf102 application note
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MPF102
Abstract: MPF102 Transistor transistor mpf102 Fairchild taping TO-92 MPF102G
Contextual Info: MPF102 TO-92 G SD N-Channel RF Amplifier This device is designed for electronic switching Applications such as low ON resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings * TA=25 degree C unless otherwise noted Symbol Parameter Value
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mpf102mpf102 transistortransistor mpf102fairchild taping to-92+1mpf102g
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MPF102 equivalent transistor
Abstract: mpf102 replacement BC237 MPF102 model MPF102 Transistor 2N1893 equivalent replacement of MPF102 JFET 2N3019 and applications BSS89 APPLICATION mpf102 application note
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N–Channel — Depletion MPF102 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS – 25
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mpf102226aamsc1621t1msc2404+16msd1819amv1620mv1624mv1636mv1640mv1642mpf102 equivalent transistormpf102 replacementbc237mpf102 modelmpf102 transistor2n1893 equivalentreplacement of mpf102 jfet2n3019 and applicationsbss89 applicationmpf102 application note
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L129
Contextual Info: MPF102 SILICO N Silicon N-channel junction field-effect transistor designed for VHF amplifier and m ixer applications. M A X IM U M R A T IN G S l*A = 2 S * C unlM S o t h e r « * ! n o t« i> Symbol Value Unit Draln-Source Voltage VDS 25 Vdc Draln-Gate Voltage
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mpf102
Abstract: equivalent to MPF102 Transistors mpf102 equivalent MPF102 y parameters
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T VHF Amplifier N-Channel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VdS 25 Vdc VDG 25 Vdc VGS -2 5 Vdc 'g 10 mAdc Pd 350 2.8 mW mW/°C Tj 125 °C Tstg - 6 5 to +150 °c D rain -S ou rce Voltage
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100ccmpf102equivalent to mpf102 transistorsmpf102 equivalent+1mpf102 y parameters
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2n3819 field-effect transistors
Abstract: MPF102 MMBF-5457 bf245b
Contextual Info: Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re Yfs @ 1 kHz Re Yos @ 1 kHz mmho Min µmho Max − − − 2N5460 2N5461 2N5462 − − − 3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5 MMBF5460LT1 BFR30LT1 BFR31LT1 N−Channel 2N3819 2N5457
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2n38192n54572n5458bf245a+9bf245bbf256a2n54602n54612n5462o-226aa2n3819 field-effect transistorsmpf102mmbf-5457
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mpf102
Abstract: mpf102 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C
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o-226aampf102b3b7255mpf102 equivalent |
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dna100
Abstract: mpf103 MPF107
Contextual Info: ALL E GR O M I C R O S Y S T E M S INC 8 5 1 4 0 1 9 SPRA GU E. T3 » • Q50433Ô S E M I C O N D S / ICS D G ü 3 b Q 2 7 ■ ALGR 2> 93D 03602 PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C VgS oH
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q50433tp5951tp5952tp5953+9tp6449tp6450tp6451tp6452tp6453tp6454dna100mpf103mpf107
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2N3797
Abstract: MPF102 equivalent transistor MPF102 JFET mpf102 fet 2N3797 equivalent 2N4221 motorola MPF102 Transistor mpf102 application note P-Channel Depletion Mode FET JFET TRANSISTOR REPLACEMENT GUIDE
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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an211a/dan211a2n3797mpf102 equivalent transistor+8mpf102 jfetmpf102 fet2n3797 equivalent2n4221 motorolampf102 transistormpf102 application notep-channel depletion mode fetjfet transistor replacement guide
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MPF102 equivalent transistor
Abstract: MPF102 JFET AN211A 2N3797 mpf102 fet 2N4351 MPF102 Transistor 2N3797 equivalent mpf102 application note P-Channel Depletion Mode FET
Contextual Info: AN211A/D Field Effect Transistors in Theory and Practice http://onsemi.com APPLICATION NOTE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide Semiconductor” Field-Effect Transistor (MOSFET), or
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an211a/dr14525mpf102 equivalent transistormpf102 jfet+8an211a2n3797mpf102 fet2n4351mpf102 transistor2n3797 equivalentmpf102 application notep-channel depletion mode fet
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AN211A
Abstract: MPF102 JFET MPF102 equivalent transistor MPF102 Transistor MPF102 JFET data sheet 2N3797 2N3797 equivalent mpf102 fet mpf102 equivalent P channel 2N4221 motorola
Contextual Info: Order this document by AN211A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN211A FIELD EFFECT TRANSISTORS IN THEORY AND PRACTICE INTRODUCTION There are two types of field-effect transistors, the Junction Field-Effect Transistor JFET and the “Metal-Oxide
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an211a/dan211ampf102 jfetmpf102 equivalent transistor+7mpf102 transistormpf102 jfet data sheet2n37972n3797 equivalentmpf102 fetmpf102 equivalent p channel2n4221 motorola
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TP6449
Abstract: MPF106 J300C MPF105
Contextual Info: -“ sPRAGÏÏË/SEniCOND GR OU P 8 5 14 0 1 9 SPRAGUE, ^3 J> Ô513Ô5G m S E M I C O N D S / ICS D003b0E 3> 93D 03602 7 ô • = 2 ^ - 2 5 " PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C V g s [0 1
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d003b0eo-226aa/stylestp6449mpf106+2j300cmpf105
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MPF103
Abstract: J300B J112A MPF104 MPF105 BF244A BF246A NJ32 TP5951 TP5952
Contextual Info: PLASTIC-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g S[0 1 VtBHJGSS Conditions Limits Ig s s Oh loss Cnss* < w rDS Min. (V) Max. (V) Vos (V) lo (nA) Min. (mA) Max. (mA) G1vos (V) Min. (mS) Max. (mS) -1 5
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MPF102 JFET
Abstract: motorola AN211A 2N3797 MPF102 Transistor 2N4221 MOTOROLA POWER TRANSISTOR 2N4221 motorola JFET with Yos MPF102 circuit application 2N4351 MOTOROLA igfet
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN211A/D SEMICONDUCTOR APPLICATION NOTE AN211A NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Field Effect Transistors in Theory
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an211a/dan211ampf102 jfetmotorola an211a+82n3797mpf102 transistor2n4221 motorola power transistor2n4221 motorolajfet with yosmpf102 circuit application2n4351 motorolaigfet
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low noise transistors bc638
Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22
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mun5313dw1t1mun5314dw1t1mun5315dw1t1mun5316dw1t1+16mun5330dw1t1mun5331dw1t1mun5332dw1t1mun5333dw1t1mun5334dw1t1mun5335dw1t1low noise transistors bc638bc548mps5172 "cross-referencebc237low noise bc638bc449 "cross-referencebc307bdtc114e series2n6520 diodesmpf4856
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BC237
Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
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1ss383t12n38192n39032n3904+162n39062n44012n44032n50872n50882n5089bc237bc847bpdw1t1 seriesbc548low noise transistors bc638cbc550cbc3072n5550* surface mountbc212bsr58lt1nsdemn11xv6t1
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F245B
Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten
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BC327 BC337 noise figure
Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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m1ma151at1m1ma151kt1m1ma152at1m1ma152kt1+13m1ma151wat1m1ma151wkt1m1ma152wat1m1ma152wkt1bas16wt1m1ma141kt1bc327 bc337 noise figurebc337transistor bc307bmps5172 "cross-referencebc237bc307bc212
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2N3906 Darlington transistor
Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11
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m1ma151at1m1ma151kt1m1ma152at1m1ma152kt1+16m1ma151wat1m1ma151wkt1m1ma152wat1m1ma152wkt1bas16wt1m1ma141kt12n3906 darlington transistorbc337mps5172 "cross-referencelow noise transistors bc638transistor mpf102low noise bc638sot-346 431bc237bc307bc212
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2N2222A mps
Abstract: fsk modulator MPF102 MC13173 SFH484 Wideband FM Modulator 1N4001 2N2222A MC13156 MC13173FTB
Contextual Info: Order this document by MC13173/D MC13173 The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared LED transmitter. This device was designed to provide communications between portable computers via a half duplex infrared link at data rates up to
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mc13173/dmc131732n2222a mpsfsk modulator+7mpf102sfh484wideband fm modulator1n40012n2222amc13156mc13173ftb
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E421 fet
Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.
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o-72po-92xo-105o-106+11o-106pe421 fetequivalent transistor e176j2n2608j2n3821e112 jfete420 dual jfet2n390g transistore421 dual jfet2n4360 equivalent transistorsteledyne semiconductor jfet
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Contextual Info: Order this document by MC13173/D MC13173 Advance Information Infrared Integrated Transceiver IC INFRARED TRANSCEIVER The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared
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pll fsk MODULATOR
Abstract: FSK modulator and demodulator 2N2222A motorola Wideband FM receiver FSK modulator circuit PLL FSK DEMODULATOR 2N2222A plastic MPF102 fsk modulator iris driver control drive coil
Contextual Info: Order this document by MC13173/D MC13173 Infrared Integrated Transceiver IC The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared LED transmitter. This device was designed to provide communications
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mc13173/dmc13173pll fsk modulatorfsk modulator and demodulator+82n2222a motorolawideband fm receiverfsk modulator circuitpll fsk demodulator2n2222a plasticmpf102fsk modulatoriris driver control drive coil
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pll fsk MODULATOR
Abstract: SFH484-2 SFH206K motorola FM TRANSCEIVER siemens SFH nm mpf 102 k33n mps 2N2222A
Contextual Info: Order this document by MC13173/D MC13173 Infrared Integrated Transceiver IC The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared LED transmitter. This device was designed to provide communications
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