MOUNTING AND SOLDERING OF RF TRANSISTORS Search Results

AN10896

Contextual Info: AN10896 Mounting and Soldering of RF transistors Rev. 2 — 13 Nov 2012 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages

AN10896

Abstract: finger print sensor pcb with circuit Mounting and Soldering of RF transistors heller 1700 ipc 610D JEDEC J-STD-020d Moisture/Reflow sensitivity HVQFN48 J-STD-020D bga rework graphite thermal spreader
Contextual Info: AN10896 Mounting and Soldering of RF transistors Rev. 01 — 17 May 2010 Application note Document information Info Content Keywords Surface mount, reflow soldering, bolt down Abstract This application note provides bolt down and soldering guidelines for NXP’s RF transistor packages

Contextual Info: AN11183 Mounting and soldering of RF transistors in over-molded plastic packages Rev. 1 — 6 November 2012 Application note Document information Info Content Keywords Over-Molded Plastic OMP packages, heat sink, footprint, surface mount, reflow soldering, component handling, exposed heat spreader, SMDP,

bc 339

Contextual Info: Philips Semiconductors RF Wideband Transistors General section MOUNTING AND SOLDERING Screen printing Mounting methods This Is the best high-voiume production method of solder paste application. An emulsion-coated, fine mesh screen with apertures etched in the emulsion to coincide with the

SMD transistors

Abstract: msa42 smd-transistor DATA BOOK MSA444 RF Power Modules msa4 smd-transistor code book MSA422 "RF Power Modules" transistor smd code 404
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Modules and Transistors for Mobile Phones 1996 Jun 06 File under Discrete Semiconductors, SC09 Philips Semiconductors RF Power Modules and Transistors for Mobile Phones General • Acceptance tests on finished products to verify

TRANSISTOR SMD MARKING CODE NM

Abstract: thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF General • Acceptance tests on finished products to verify conformance with the device specification. The test

AN3263

Abstract: metric bolts tightening torque graphite foil m2 m2.5 m3 bolt tensile bts 2140 1b data sheet "RF Power Transistors"pallet metric bolts torque metric bolts torque m 32 omp amplifier A104
Contextual Info: Freescale Semiconductor Application Note AN3263 Rev. 0, 6/2006 Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages By: Mahesh Shah, Richard Wetz, Lindsey Tiller, Leonard Pelletier, Eddie Mares and Jin - wook Jang

transistor working principle

Abstract: weller tinning rf transistor 320 SN62 SN63 Cold solder joint gold embrittlement METCAL MX-500 circuit metcal iron
Contextual Info: RF Power Innovations 310 320-6160 AN3025 Transistor Mounting and Soldering Brett Kelley and Eric Hokenson 18 December 2003 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. 1. Solder pre-tin the transistor leads.

TRANSISTOR SMD CODE PACKAGE SOT353

Abstract: msa42 transistor working principle 250 B 340 smd Transistor Basic Transistor and Cross Reference Specification Mounting and Soldering of RF transistors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET General section RF Wideband Transistors Product specification File under Discrete Semiconductors, SC14 1997 Nov 26 Philips Semiconductors Product specification RF Wideband Transistors General section • Acceptance tests on finished products to verify

h0 sod123

Abstract: Transistor SMD SOT363 SC70 SOT353 hf Device h0 sod123 GaAs tunnel diode gFE smd diode SOD80 footprint sot23 footprint SOT346 ZENER thyristor handbook
Contextual Info: Philips Semiconductors RF Wideband Transistors General section • Acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective actions. The inspection and test requirements are

STAC244

Abstract: drying oven STAC265F M252 substitution AN3232 C10100 M252 STAC265B seho
Contextual Info: AN3232 Application note Mounting recommendations for STAC boltdown packages Introduction RF power transistors are amongst the highest power density devices in the semiconductor industry. It is crucial to the reliability and performance of such devices to consider

AN3025

Abstract: transistor working principle tinning METCAL MX-500 circuit free transistor SN62 SN63 GC Electronics 108109 metcal transistor free
Contextual Info: Application Note AN3025 Transistor Mounting and Soldering Rev. 3 Introduction There are three basic steps recommended to mount and solder RF power transistors into a circuit. Solder pre-tin the transistor leads Mount the transistor Solder the transistor leads to the circuit trace

gsm signal repeater

Contextual Info: Product Description Sirenza Microdevices’ XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in GSM and EDGE RF applications. This module is optimized to minimize the EVM at typical operating levels. The power transistors are fabricated using Sirenza's latest, high

GSM repeater circuit

Abstract: Rogers 4350 datasheet AN060 XD010-14S-D4F XD010-14S-D4FY
Contextual Info: Product Description Sirenza Microdevices’ XD010-14S-D4F 15W power module is a robust 2stage Class A/AB amplifier module for use in GSM and EDGE RF applications. This module is optimized to minimize the EVM at typical operating levels. The power transistors are fabricated using Sirenza's latest, high

RF MODULE CIRCUIT DIAGRAM

Abstract: Rogers 4350 datasheet AN060 XD010-51S-D4F AT915
Contextual Info: XD010-51S-D4F Product Description Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a

Contextual Info: XD010-04S-D4F Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is

XD010-51S-D4FY

Abstract: LDMOS 15w Rogers 4350 datasheet AN060 XD010-51S-D4F
Contextual Info: Product Description Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a

Contextual Info: Product Description Sirenza Microdevices’ XD010-51S-D4F 15W power module is a robust 2stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a

Contextual Info: Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is

VD-1-43

Abstract: Rogers 4350 datasheet AN060 XD010-04S-D4F 10MF 35V
Contextual Info: Product Description Sirenza Microdevices’ XD010-04S-D4F 12W power module is a robust broadband 2-stage Class A/AB amplifier, suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, notune, solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. Internal bias current compensation ensures stable performance over a wide temperature range. It is

GSM repeater circuit

Abstract: EDS-102930 repeater gsm Rogers 4350 datasheet AN060 XD010-22S-D2F GSM repeater power amplifier module
Contextual Info: XD010-22S-D2F 1805-1880 MHz Class A/AB 12W Power Amplifier Module Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors

XD010-22S-D2FY

Abstract: GSM repeater circuit Rogers 4350 datasheet XD010-22S-D2F AN060
Contextual Info: XD010-22S-D2F XD010-22S-D2FY Product Description Sirenza Microdevices’ XD010-22S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of GSM/ EDGE RF power amplifiers for cellular base stations. The power transistors

XD010-24S-D2FY

Abstract: Rogers 4350 datasheet AN060 XD010-24S-D2F
Contextual Info: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s

Contextual Info: XD010-24S-D2F XD010-24S-D2FY Product Description Sirenza Microdevices’ XD010-24S-D2F 12W power module is a robust 2stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers. The power transistors are fabricated using Sirenza’s