MOTOROLA DRAM 16 X 16 Search Results

Contextual Info: Order this document by MCM218160B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family Fast Page Mode, 1M x 16, and 1K Refresh MCM218160B Fast Page Mode 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4 1 CMOS

555E

Contextual Info: Order this document by MCM218165B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165B EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4|i CMOS high-speed silicon-gate process technology. It includes devices organized as

cm218

Abstract: MCM21
Contextual Info: Order this document by MCM218165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16, and 1K Refresh MCM218165BV EDO 1024 Cycle Refresh The family of 16M Dynamic RAMs is fabricated using 0.4^ CMOS high-speed silicon-gate process technology. It includes devices organized as

I051

Abstract: ez35
Contextual Info: Order this document by 3VEDOU32D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M DRAM Sm all Outline D ual-In-Line Memory Module SO-DIMM X 32 3.3 V, EDO, Unbuffered 4, 8, and 16 Megabyte 1M x 32 (4MB), 2M x 32 (BMB) 72-LEAD SMALL OUTLINE DIMM CASE 992A-01

MB642BT18TADG60

Abstract: MB641BT18TADG60 MB641BT18TADG70 MB642BT18TADG70 MB644CT10TADG60 MB644CT10TADG70 EEE Std 404
Contextual Info: Order this document by 3VEDOU64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2, 4M x 64 DRAM Dual-In-Line Memory Module DIMM 8, 16, and 32 Megabyte • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM) 3.3 V, EDO, Unbuffered 1M x 64 (8MB), 2M x 64 (16MB)

8M DRAM

Abstract: VCCC1-C10
Contextual Info: Order this document by 5VEDOU36SQ/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4, 8M X 36 5 V, EDO, Unbuffered DRAM Single-In-Line Memory Module SIMM 4M x 36 (16MB), 8M x 36 (32MB) 72-LEAD LOW HEIGHT SIMM CASE 866-02 16 and 32 Megabyte • JEDEC-Standard 72-Lead Single-In-Line Memory Module (SIMM)

Contextual Info: Order this document by 3VFPMU32D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M X 32 DRAM Small Outline Dual-In-Line Memory Module SO-DIMM 3.3 V, FPM, Unbuffered 4M x 32 (16MB) 72-LEAD SMALL OUTLINE DIMM MODULE CASE 992A-01 BACK FRONT 16 Megabyte • JEDEC-Standard 72-Lead Small Outline Dual-ln-Line

Contextual Info: Order this document by MCM516165B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information 16M CMOS Wide DRAM Family EDO, 1M x 16,1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50p. C M O S high-speed silicon-gate process technology. It includes devices organized as 1,048,576 six­

Contextual Info: Order this document by 5VFPMU36SO/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4, 8M x 36 DRAM S in g le -ln -L in e M em ory M odule SIMM 5 V, FPM, Unbuffered DRAWING 1 4M x 36 (16MB), 8M x 36 (32MB) 72-LEAD SIMM, CASE 86&-02 16 and 32 Megabyte • • JEDEC-Standard 72-Lead Singie-ln-Line Memory

MB641BT08TADG60

Abstract: MB641BT08TADG70 MB642BT08TADG60 MB642BT08TADG70 MB644CT00TADG60 MB644CT00TADG70
Contextual Info: Order this document by 5VEDOU64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2, 4M x 64 DRAM Dual-In-Line Memory Module DIMM 5 V, EDO, Unbuffered 8, 16, and 32 Megabyte • • • • • • • • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM)

HA 1156 wp

Abstract: YXXXX
Contextual Info: Order this document by MCM516165BV/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information M CM 516165BV 16M CMOS Wide DRAM Family EDO, 1M x 1 6 ,1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50 i CMOS high-speed silicon-gate process technology. It includes devices organized as 1,048,576

MCM518160A-XX

Contextual Info: Order this document by MCM516160A/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516160A 16M CMOS Wide DRAM Family Fast Page Mode, x16 and x18 The family of 16M dynamic RAMs is fabricated using 0.55|i CMOS high-speed silicon-gate process technology. It includes devices organized as 1,048,576 sixteen- and

LASCR

Abstract: OB64D
Contextual Info: Order this document by 3VEDOB64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 , 2 M DRAM Dual-ln-Line Memory Module DIMM x 6 4 3.3 V, EDO, Buffered 8 and 16 Megabyte • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM) • Single 3.3 V Power Supply, LVTTL-Compatible Inputs and Outputs

1115A

Abstract: MB721BT08TADG60 MB721BT08TADG70 MB722BT08TADG60 MB722BT08TADG70 MB724CT00TADG60 MB724CT00TADG70
Contextual Info: Order this document by 5VEDOU72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2, 4M x 72 5 V, EDO, Unbuffered DRAM Dual-In-Line Memory Module DIMM 8, 16, and 32 Megabyte • JEDEC–Standard 168–Lead Dual–In–Line Memory Module (DIMM) • Single 5 V Power Supply, TTL_Compatible Inputs and Outputs

Contextual Info: Order this document by MCM516160B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M Advance Information 16M CMOS Wide DRAM Family Fast Page Mode, x16 The family of 16M Dynamic RAMs is fabricated using 0.5 m. CMOS high-speed sili­ con—gate process technology. It includes devices organized as 1,048,576 sixteen-bit

max2952

Contextual Info: Order this document by 3VEDOU72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M X 72 3.3 V, EDO, Unbuffered DRAM D u al-ln -Lin e M emory Module DIMM 8,16, and 32 Megabyte • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM) • Single 3.3 V Power Supply, LVTTL-Compatible Inputs and Outputs

Contextual Info: Order this document by 5VEDOU64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M DRAM Dual-ln-Line Memory Module DIMM X 64 5 V, EDO, Unbuffered 8,16, and 32 Megabyte • • • • • • • • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM)

Contextual Info: Order this document by MC16S044T3B/D SEMICONDUCTOR -TECHNICAL DATA 2 X 2M X 4 MC16S044T3B Product Previe 16M Synchronous DRAM Fam ily x 4 , x 8 2 x 1M x 8 MC16S084T3B

capacitor 56J pF

Contextual Info: MOTOROLA Order this document by 3VEDOB72D~ SEMICONbUCTOR TECHNICAL DATA — lM x72 DRAM Dual-In-Line Memory Module DIMM 3.3 V, EDO, Buffered For Error Correction Code Applications 8 Megab~e JEDEGStandard 168–Lead Dual-In-tine Single 3.3 V Power Supply, LWL<ompatible

Contextual Info: Order this document by 5VEDOU72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M X 72 5 V, EDO, Unbuffered DRAM Dual-In-Line Memory Module DIMM 1M x 72 (8MB), 2M x 72 (16MB) 168-LEAD DIMM CASE 1115A-01 8,16, and 32 Megabyte • JEDEC-Standard 168-Lead D ual-In-Line Memory Module (DIMM)

MCM317400CT60

Contextual Info: O rder this docum ent by MCM317400C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M Advance Information 16M CMOS Dynamic RAM Family Fast Page Mode 4M x 4 Fast Page Mode 2048 Cycle Refresh MIL SOJ CASE 8 8 0 A -0 2 • Three-State Data Outputs • Fast Page Mode

Contextual Info: Order this document by 5VFPMU72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M X 72 5 V, FPM, Unbuffered DRAM D ual-ln-Line Memory Module DIMM 1M x 72 (8MB), 2M x 72 (16MB) 168-LEAD DIMM CASE 1115A-01 8,16, and 32 Megabyte • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM)

Contextual Info: Order this document by MCM417400C/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M X 4 Advance Information 16M CMOS Dynamic RAM Family Fast Page Mode x4 2K Refresh MCM417400C Fast Page Mode 2048 Cycle Refresh The family of 16M dynamic RAMs is fabricated using sub-micron CMOS

Contextual Info: Order this document by 5VFPMB72D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M X 72 5 V, FPM, Buffered DRAM Dual-ln-Line Memory Module DIMM For Error Correction Code Applications 8 Megabyte • JEDEC-Standard 168-Lead Dual-ln-Line Memory Module (DIMM) • Single 5 V Power Supply, TTL_Compatible Inputs and Outputs