MOSFET VGS 5V Search Results

MOSFET VGS 5V Result Highlights (5)

Part	Manufacturer	Description	Download
TCK424G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E	Datasheet
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G	Datasheet

MOSFET VGS 5V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si7501DN Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET	Original	Si7501DN 07-mm Si7501DN-T1--E3 S-32419--Rev. 24-Nov-03	PDF
Si7501DN Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET	Original	Si7501DN 07-mm Si7501DN-T1--E3 08-Apr-05	PDF
Si7501DN Abstract: si-7501 si7501dn-t1 Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel - 30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = - 10 V - 6.4 0.075 @ VGS = - 6 V - 5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET	Original	Si7501DN 07-mm Si7501DN-T1 S-03722--Rev. 07-Apr-03 si-7501	PDF
MDS9754 Abstract: 8v15 Contextual Info: Dual Enhancement N-P Channel Trench MOSFET General Description Features N-Channel VDS = 40V ID = 6.1A @ VGS = 10V RDS ON <29mΩ @ VGS = 10V <37mΩ @ VGS = 4.5V The MDS9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in	Original	MDS9754 MDS9754 8v15	PDF
MDD1653 Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state	Original	MDD1653 MDD1653 MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R	PDF
0342F Abstract: 82269 MagnaChip Semiconductor Contextual Info: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state	Original	MDS1656 MDS1656 0342F 82269 MagnaChip Semiconductor	PDF
MDF1752 Abstract: 220F Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state	Original	MDF1752 MDF1752 220F	PDF
KI9410DY Abstract: sop-8 smd type mosfet smd Contextual Info: MOSFET SMD Type N-Channel 30-V D-S MOSFET KI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) D D D D ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) G S S N/C 1 8 D S 2 7 D S 3	Original	KI9410DY KI9410DY sop-8 smd type mosfet smd	PDF
MDI1752 Abstract: 40V50A 40V, 50A n mosfet 82269 Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state	Original	MDI1752 MDI1752 40V50A 40V, 50A n mosfet 82269	PDF
Contextual Info: MOSFET SMD Type N-Channel 30-V D-S MOSFET SI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) D D D D N/C 1 8 D S 2 7 D S 3 6 D G	Original	SI9410DY	PDF
MDD1751 Abstract: 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET Contextual Info: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 60A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in	Original	MDD1751 MDD1751 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET	PDF
MDE1751 Abstract: trench mosfet Contextual Info: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ General Description Features The MDE1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in	Original	MDE1751 MDE1751 trench mosfet	PDF
MDE1752 Abstract: MDE1752R Contextual Info: N-Channel Trench MOSFET 40V, 66A,8.0mΩ General Description Features The MDE1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 66A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state	Original	MDE1752 MDE1752 MDE1752R	PDF
6903 Abstract: MDE1751 Contextual Info: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ Features General Description VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V The MDE1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in	Original	MDE1751 MDE1751 6903	PDF

IRFH8330 Abstract: mosfet J 3305 Contextual Info: PD - 97652C IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters	Original	97652C IRFH8330PbF IRFH8330 mosfet J 3305	PDF
Contextual Info: IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters	Original	IRFH8330PbF	PDF
SI7540DP Contextual Info: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET	Original	Si7540DP 07-mm 500-kHz S-21417â 12-Aug-02	PDF
TS16949 Abstract: ZXMC3F31DN8 ZXMC3F31DN8TA Contextual Info: ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V BR DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Q2 -30 12.7 Description This new generation Trench MOSFET from Zetex has been designed to	Original	ZXMC3F31DN8 D-81541 TX75248, TS16949 ZXMC3F31DN8 ZXMC3F31DN8TA	PDF
Si4806DY Abstract: Si4806DY-T1 Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET	Original	Si4806DY Si4806DY-T1 18-Jul-08	PDF
IRFH8330 Contextual Info: PD - 97652A IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters	Original	7652A IRFH8330PbF IRFH8330	PDF
Contextual Info: PD - 97652C IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters	Original	97652C IRFH8330PbF	PDF
Contextual Info: DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(on) max 20V 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching	Original	DMN2014LHAB DS36441	PDF
Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS	Original	IRFH7932PbF IRFH7932TRPbF IRFH7932TR2PbF 078mH,	PDF
Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS	Original	IRFH7932PbF IRFH7932TRPbF IRFH7932TR2PbF IRFH7934PbF	PDF

MOSFET VGS 5V Search Results

MOSFET VGS 5V Result Highlights (5)

MOSFET VGS 5V Datasheets Context Search

Si7501DN

Si7501DN

Si7501DN

MDS9754

MDD1653

0342F

MDF1752

KI9410DY

MDI1752

MDD1751

MDE1751

MDE1752

6903

IRFH8330

SI7540DP

TS16949

Si4806DY

IRFH8330