MOSFET VGS 5V Search Results

Si7501DN

Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET

SI7501DN

Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET

SI7501DN-T1-E3

Abstract: 72173 SI7501DN
Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET

Si7501DN

Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel −30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = −10 V −6.4 0.075 @ VGS = −6 V −5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET

Si7501DN

Abstract: si-7501 si7501dn-t1
Contextual Info: Si7501DN Vishay Siliconix Complementary 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) P-Channel - 30 N Channel N-Channel 30 rDS(on) (W) ID (A) 0.051 @ VGS = - 10 V - 6.4 0.075 @ VGS = - 6 V - 5.3 0.035 @ VGS = 10 V 7.7 0.050 @ VGS = 4.5 V 6.5 D TrenchFETr Power MOSFET

MDS9754

Abstract: 8v15
Contextual Info: Dual Enhancement N-P Channel Trench MOSFET General Description Features N-Channel VDS = 40V ID = 6.1A @ VGS = 10V RDS ON <29mΩ @ VGS = 10V <37mΩ @ VGS = 4.5V The MDS9754 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in

MDD1653

Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
Contextual Info: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state

0342F

Abstract: 82269 MagnaChip Semiconductor
Contextual Info: N-Channel Trench MOSFET 30V, 7.2A, 28mΩ General Description Features The MDS1656 uses advanced Magnachip’s trench MOSFET VDS = 30V ID = 7.2A @VGS = 10V RDS ON < 28mΩ @VGS = 10V < 42mΩ @VGS = 4.5V Technology to provide high performance in on-state

MDF1752

Abstract: 220F
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDF1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

KI9410DY

Abstract: sop-8 smd type mosfet smd
Contextual Info: MOSFET SMD Type N-Channel 30-V D-S MOSFET KI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) D D D D ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) G S S N/C 1 8 D S 2 7 D S 3

MDI1752

Abstract: 40V50A 40V, 50A n mosfet 82269
Contextual Info: N-Channel Trench MOSFET 40V, 50A, 8.0mΩ General Description Features The MDI1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

Contextual Info: MOSFET SMD Type N-Channel 30-V D-S MOSFET SI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) D D D D N/C 1 8 D S 2 7 D S 3 6 D G

MDD1751

Abstract: 60V 60A TO-252 N-CHANNEL 40V 60A MOSFET
Contextual Info: 40V N-channel Trench MOSFET : 40V, 60A, 7.5mΩ General Description Features The MDD1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 60A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in

MDE1751

Abstract: trench mosfet
Contextual Info: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ General Description Features The MDE1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in

6903

Abstract: MDE1751
Contextual Info: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ Features General Description VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V The MDE1751 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in

MDD1752

Abstract: MDD*1752 trench mosfet MDD1752R MAGNACHIP
Contextual Info: N-Channel Trench MOSFET 40V, 50A,8.0mΩ General Description Features The MDD1752 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 50A @VGS = 10V RDS ON < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V performance in on-state

IRFH8330

Abstract: mosfet J 3305
Contextual Info: PD - 97652C IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters

Contextual Info: IRFH8330PbF VDS VGS max RDS on max 30 V ± 20 V 6.6 (@VGS = 10V) (@VGS = 4.5V) 9.9 Qg typ. 9.3 ID 25 (@Tc(Bottom) = 25°C) HEXFET Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters • Synchronous MOSFET for high frequency buck converters

SI7540DP

Contextual Info: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET

TS16949

Abstract: ZXMC3F31DN8 ZXMC3F31DN8TA
Contextual Info: ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V BR DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Q2 -30 12.7 Description This new generation Trench MOSFET from Zetex has been designed to

Si7540DP

Abstract: DIODE TH 5 N
Contextual Info: Si7540DP New Product Vishay Siliconix N- and P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET

Contextual Info: Si4806DY Vishay Siliconix N-Channel 30:1 Ratio Dual-Gate 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) Gate 1 30 Gate 2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.7 0.03 @ VGS = 4.5 V 6.4 0.25 @ VGS = 10 V 2.0 0.40 @ VGS = 4.5 V 1.5 D TrenchFETr Power MOSFET

SI7540DP

Contextual Info: Si7540DP New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 12 P-Channel -12 rDS(on) (W) ID (A) 0.017 @ VGS = 4.5 V 11.8 0.025 @ VGS = 2.5 V 9.8 0.032 @ VGS = -4.5 V -8.9 0.053 @ VGS = -2.5 V -6.9 D TrenchFETr Power MOSFET

TS16949

Abstract: ZXMC3F31DN8 ZXMC3F31DN8TA
Contextual Info: ZXMC3F31DN8 30V SO8 Complementary dual enhancement mode MOSFET Summary Device V BR DSS (V) QG (nC) RDS(on) (Ω) ID (A) Q1 30 12.9 0.024 @ VGS= 10V 7.3 0.039 @ VGS= 4.5V 5.7 0.045 @ VGS= -10V 5.3 0.080 @ VGS= -4.5V 4 Q2 -30 12.7 Description This new generation Trench MOSFET from Zetex has been designed to