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    MOSFET TRANSISTOR 400 VOLTS.100 AMPERES Search Results

    MOSFET TRANSISTOR 400 VOLTS.100 AMPERES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130AT
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOSFET TRANSISTOR 400 VOLTS.100 AMPERES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    pd 223

    Abstract: AN569 MTU20N40E motorola MOSFET 935
    Contextual Info: MOTOROLA Order this document by MTU20N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTU20N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 20 AMPERES 400 VOLTS RDS on = 0.19 OHM This high voltage MOSFET uses an advanced termination


    Original     		MTU20N40E/D MTU20N40E pd 223 AN569 MTU20N40E motorola MOSFET 935 PDF

    AN569

    Abstract: MTY16N80E
    Contextual Info: MOTOROLA Order this document by MTY16N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY16N80E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 800 VOLTS


    Original     		MTY16N80E/D MTY16N80E MTY16N80E/D* AN569 MTY16N80E PDF

    MTW7N80E

    Contextual Info: MOTOROLA Order this document by MTW7N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW7N80E Motorola Preferred Device TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS on = 1.0 OHM


    Original     		MTW7N80E/D O-247 MTW7N80E MTW7N80E/D* MTW7N80E PDF

    511 MOSFET TRANSISTOR motorola

    Abstract: MTP3N100E transistor 131-6 AN569
    Contextual Info: MOTOROLA Order this document by MTP3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP3N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1000 VOLTS


    Original     		MTP3N100E/D MTP3N100E MTP3N100E/D* 511 MOSFET TRANSISTOR motorola MTP3N100E transistor 131-6 AN569 PDF

    transistor mj 1503 motorola

    Abstract: mosfet transistor 400 volts.100 amperes AN569 MTE53N50E CISS 3010
    Contextual Info: MOTOROLA Order this document by MTE53N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE53N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 53 AMPERES


    Original     		MTE53N50E/D MTE53N50E MTE53N50E/D* transistor mj 1503 motorola mosfet transistor 400 volts.100 amperes AN569 MTE53N50E CISS 3010 PDF

    AN569

    Abstract: MTY10N100E transistor 667 7A
    Contextual Info: MOTOROLA Order this document by MTY10N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY10N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 1000 VOLTS


    Original     		MTY10N100E/D MTY10N100E MTY10N100E/D* AN569 MTY10N100E transistor 667 7A PDF

    MTP1N100E

    Abstract: AN569
    Contextual Info: MOTOROLA Order this document by MTP1N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP1N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 1.0 AMPERES 1000 VOLTS


    Original     		MTP1N100E/D MTP1N100E MTP1N100E/D* MTP1N100E AN569 PDF

    2N3904

    Abstract: AN569 MTP5N40E 221A-06 MTP5N40E-D
    Contextual Info: MOTOROLA Order this document by MTP5N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP5N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS on = 1.0 OHM


    Original     		MTP5N40E/D MTP5N40E MTP5N40E/D* 2N3904 AN569 MTP5N40E 221A-06 MTP5N40E-D PDF

    MTP10N40E

    Abstract: motorola an569 thermal 2N3904 AN569
    Contextual Info: MOTOROLA Order this document by MTP10N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP10N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.55 OHMS This advanced high voltage TMOS E–FET is designed to


    Original     		MTP10N40E/D MTP10N40E MTP10N40E/D* MTP10N40E motorola an569 thermal 2N3904 AN569 PDF

    MTP-2N50E

    Abstract: mtp2n50e
    Contextual Info: MOTOROLA Order this document by MTP2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor MTP2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS on = 3.6 OHM


    Original     		MTP2N50E/D MTP2N50E/D* MTP-2N50E mtp2n50e PDF

    MTB8N50E

    Contextual Info: MOTOROLA Order this document by MTB8N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB8N50E TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = 0.8 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB8N50E/D MTB8N50E MTB8N50E PDF

    transistor mj 1503 motorola

    Abstract: AN569 MTE30N50E tp 312 transistor
    Contextual Info: MOTOROLA Order this document by MTE30N50E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTE30N50E ISOTOP TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 30 AMPERES 500 VOLTS


    Original     		MTE30N50E/D MTE30N50E MTE30N50E/D* transistor mj 1503 motorola AN569 MTE30N50E tp 312 transistor PDF

    AN569

    Abstract: MTE215N10E mosfet transistor 400 volts.100 amperes
    Contextual Info: MOTOROLA Order this document by MTE215N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE215N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 215 AMPERES


    Original     		MTE215N10E/D MTE215N10E MTE215N10E/D* AN569 MTE215N10E mosfet transistor 400 volts.100 amperes PDF

    UC3845BN USED CIRCUIT

    Abstract: MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes
    Contextual Info: MOTOROLA Order this document by MTP3N120E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E TMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 1200 VOLTS


    Original     		MTP3N120E/D MTP3N120E UC3845BN USED CIRCUIT MBR370 UC3845BN AN1327 AN569 MOC8102 MTP3N120E MUR430 MTP3N120E-D mosfet transistor 800 volts.400 amperes PDF

    MTP3N6

    Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
    Contextual Info: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS


    Original     		MTP3N60E/D MTP3N60E MTP3N6 MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR PDF

    AN569

    Abstract: MTD1N80E SMD310
    Contextual Info: MOTOROLA Order this document by MTD1N80E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD1N80E Motorola Preferred Device TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS on = 12 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTD1N80E/D MTD1N80E MTD1N80E/D* AN569 MTD1N80E SMD310 PDF

    1029 01

    Abstract: AN569 MTB10N40E SMD310
    Contextual Info: MOTOROLA Order this document by MTB10N40E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB10N40E Motorola Preferred Device TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.55 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB10N40E/D MTB10N40E MTB10N40E/D* 1029 01 AN569 MTB10N40E SMD310 PDF

    AN569

    Abstract: MTY14N100E 340G
    Contextual Info: MOTOROLA Order this document by MTY14N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTY14N100E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 1000 VOLTS


    Original     		MTY14N100E/D MTY14N100E MTY14N100E/D* AN569 MTY14N100E 340G PDF

    Contextual Info: MOTOROLA Order this document by MTP50N06V/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet V MTP50N06V Designer's TMOS Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS on = 0.028 OHM


    Original     		MTP50N06V/D MTP50N06V MTP50N06V/D* PDF

    AN569

    Abstract: MTE125N20E mosfet transistor 400 volts.100 amperes CISS 3010 transistor mj 1503 motorola
    Contextual Info: MOTOROLA Order this document by MTE125N20E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet ISOTOP TMOS E-FET. Power Field Effect Transistor Designer's MTE125N20E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 125 AMPERES


    Original     		MTE125N20E/D MTE125N20E MTE125N20E/D* AN569 MTE125N20E mosfet transistor 400 volts.100 amperes CISS 3010 transistor mj 1503 motorola PDF

    AN569

    Abstract: MTB2N60E SMD310
    Contextual Info: MOTOROLA Order this document by MTB2N60E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB2N60E Motorola Preferred Device TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS on = 3.8 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB2N60E/D MTB2N60E AN569 MTB2N60E SMD310 PDF

    AN569

    Abstract: MTB3N100E SMD310 LS 1316
    Contextual Info: MOTOROLA Order this document by MTB3N100E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET D2PAK for Surface Mount Designer's MTB3N100E Motorola Preferred Device TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS on = 4.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		MTB3N100E/D MTB3N100E MTB3N100E/D* AN569 MTB3N100E SMD310 LS 1316 PDF

    AN569

    Abstract: MTP12N06EZL mosfet transistor 400 volts.100 amperes
    Contextual Info: MOTOROLA Order this document by MTP12N06EZL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP12N06EZL N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.180 OHM This advanced TMOS power FET is designed to withstand high


    Original     		MTP12N06EZL/D MTP12N06EZL MTP12N06EZL/D* AN569 MTP12N06EZL mosfet transistor 400 volts.100 amperes PDF

    MTP60N05HDL

    Abstract: AN569 TRANSISTOR MOTOROLA
    Contextual Info: MOTOROLA Order this document by MTP60N05HDL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTP60N05HDL HDTMOS E-FET. Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 60 AMPERES 50 VOLTS RDS on = 0.014 OHM


    Original     		MTP60N05HDL/D MTP60N05HDL MTP60N05HDL AN569 TRANSISTOR MOTOROLA PDF