Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    MTB4N80E1 Search Results

    MTB4N80E1 Datasheets (4)

    On Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MTB4N80E1
    		On Semiconductor TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead Original PDF 163.56KB 8
    MTB4N80E1
    		On Semiconductor N-Channel Enhancement-Mode Silicon Gate Original PDF 193.81KB 8
    MTB4N80E1/D
    		On Semiconductor TMOS POWER FET 4.0 AMPERES 800 VOLTS Original PDF 163.56KB 8
    MTB4N80E1-D
    		On Semiconductor TMOS E-FET High Energy Power FET D2PAK-SL Straight Original PDF 163.57KB 8

    MTB4N80E1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    418C

    Abstract: AN569 MTB4N80E1
    Contextual Info: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview TMOS E−FET. High Energy Power FET D2PAK−SL Straight Lead MTB4N80E1 Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N−Channel Enhancement−Mode Silicon Gate


    Original     		mtb4n80e1/dmtb4n80e1418can569 PDF

    418C

    Abstract: AN569 MTB4N80E1
    Contextual Info: MOTOROLA Order this document by MTB4N80E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET. High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3.0 OHM N–Channel Enhancement–Mode Silicon Gate


    Original     		mtb4n80e1/dmtb4n80e1418can569 PDF

    FAG 29 diode

    Contextual Info: MOTOROLA Order this document by MTB4N&0E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3-0 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		mtb4n80e1418c-01b3b72ssfag 29 diode PDF