MOSFET SWITCHING Search Results

APV1121S

Contextual Info: PHOTOVOLTAIC MOSFET DRIVER APV1,2 PHOTOVOLTAIC MOSFET DRIVER (APV1,2) PHOTOVOLTAIC MOSFET DRIVER 6 Control circuit 1 2 4 1 4 Control circuit 3 3 2 FEATURES TYPICAL APPLICATIONS 1. High-speed switching Since release time is 0.1 ms, the MOSFET can be turned off quickly in

MCH3312

Abstract: CPH5854 SB1003M3 A05166 marking YG
Contextual Info: CPH5854 Ordering number : ENA0516 SANYO Semiconductors DATA SHEET CPH5854 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type containing a P-Channel MOSFET MCH3312 and a Schottky Barrier Diode (SB1003M3),

smd diode 46A

Abstract: equivalent smd mosfet IRF7205 IC MOSFET QG KRF7205 ld smd transistor smd mosfet
Contextual Info: MOSFET IC SMD Type HEXFET Power MOSFET KRF7205 IRF7205 Features Adavanced Process Technology Ultra Low On-Resistance P-Channel MOSFET Surface Mount Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V @ TA = 25

CPH5862

Contextual Info: CPH5862 Ordering number : ENA0464 SANYO Semiconductors DATA SHEET CPH5862 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter applications. Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 MOSFET 2Amps, 600/650 Volts N-CHANNEL MOSFET 1 TO- 251 1 DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged

EMH2302

Contextual Info: EMH2302 Ordering number : EN8726 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EMH2302 General-Purpose Switching Device Applications Features • • The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

emh2402

Contextual Info: EMH2402 Ordering number : EN8729 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EMH2402 General-Purpose Switching Device Applications Features • • The EMH2402 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching,

EMH2401

Abstract: IT10403 it10408
Contextual Info: EMH2401 Ordering number : EN8728 N-Channel Silicon MOSFET EMH2401 General-Purpose Switching Device Applications Features • • The EMH2401 incorporates an N-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting.

RG107

Contextual Info: 4V Drive Nch MOSFET RSH125N03 Dimensions Unit : mm Structure Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8) . Application Power switching, DC / DC converter.

Contextual Info: 2SK3787-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power TO-220F Applications Switching regulators

Contextual Info: 2SK3726-01MR 200305 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

2sk3687-01mr

Contextual Info: 2SK3687-01MR 200311 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators

2SK3599-01MR

Abstract: 2sk3599 uninterruptible power supply
Contextual Info: 2SK3599-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators

ufn330

Contextual Info: POWER MOSFET TRANSISTORS 400 Volt, 1.0 Ohm N-Channel UFN332 UFN333 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Roscom and a high transconductance. FEATURES • Fast Switching

Contextual Info: FDS6614A N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

4025-C

Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

SDC40

Contextual Info: 2SK2875-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

7v71

Contextual Info: 2SK2760-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2755-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Contextual Info: 2SK2764-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply

Marking D9N

Abstract: NID9N05ACL A 673 C2 transistor NID9N05ACLT4G 05AC NID9N05CLG
Contextual Info: NID9N05CL, NID9N05ACL Power MOSFET 9.0 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation VDSS Clamped RDS(ON) TYP

AN569

Abstract: MTB23P06V MTB23P06VT4
Contextual Info: MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

AN569

Abstract: MTB36N06V MTB36N06VT4
Contextual Info: MTB36N06V Preferred Device Power MOSFET 32 Amps, 60 Volts N–Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power

3055V

Abstract: paste AN569 MTD3055V MTD3055V1 MTD3055VT4 t3055v
Contextual Info: MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power