Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MOSFET SPICE MODEL Search Results

    MOSFET SPICE MODEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    AM9513ADIB
    		Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    CA3130AT/B
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    		Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOSFET SPICE MODEL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Spice Model for TMOS Power MOSFETs

    Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
    Contextual Info: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in


    Original     		PDF

    1910 0016 diode

    Abstract: sir412dp
    Contextual Info: SPICE Device Model SiR412DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR412DP 18-Jul-08 1910 0016 diode PDF

    SiR422DP

    Contextual Info: SPICE Device Model SiR422DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR422DP 18-Jul-08 PDF

    sir418dp

    Contextual Info: SPICE Device Model SiR418DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR418DP 18-Jul-08 PDF

    Contextual Info: SPICE Device Model SiR408DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR408DP 18-Jul-08 PDF

    Si2367DS

    Contextual Info: SPICE Device Model Si2367DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		Si2367DS 18-Jul-08 PDF

    Si5471DC

    Contextual Info: SPICE Device Model Si5471DC Vishay Siliconix P-Channel 20-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		Si5471DC 18-Jul-08 PDF

    sir426

    Abstract: SiR426DP diode 1776 B
    Contextual Info: SPICE Device Model SiR426DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR426DP 18-Jul-08 sir426 diode 1776 B PDF

    SI2305CDS

    Abstract: SI2305 44A16
    Contextual Info: SPICE Device Model Si2305CDS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		Si2305CDS 18-Jul-08 SI2305 44A16 PDF

    Contextual Info: SPICE Device Model Si5458DU Vishay Siliconix N-Channel 30-V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		Si5458DU 18-Jul-08 PDF

    Si7288DP

    Abstract: s091 SI7288
    Contextual Info: SPICE Device Model Si7288DP Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		Si7288DP 18-Jul-08 s091 SI7288 PDF

    SIR172DP

    Contextual Info: SPICE Device Model SiR172DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR172DP 18-Jul-08 PDF

    Contextual Info: SPICE Device Model SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		SiR820DP 11-Mar-11 PDF

    Si7625DN

    Abstract: mosfet 4430 si7625 S10-2503
    Contextual Info: SPICE Device Model Si7625DN Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503 PDF

    mosfet 2891

    Contextual Info: SPICE Device Model Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si8499DB 18-Jul-08 mosfet 2891 PDF

    si7997

    Contextual Info: SPICE Device Model Si7997DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7997DP 18-Jul-08 si7997 PDF

    S10-1617

    Contextual Info: SPICE Device Model Si4004DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4004DY 18-Jul-08 S10-1617 PDF

    Contextual Info: SPICE Device Model Si7629DN Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si7629DN 18-Jul-08 PDF

    Contextual Info: SPICE Device Model SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiZ710DT 18-Jul-08 PDF

    Si2329DS

    Abstract: si2329 si23
    Contextual Info: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si2329DS 11-Mar-11 si2329 si23 PDF

    Si4401DDY

    Contextual Info: SPICE Device Model Si4401DDY Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4401DDY 18-Jul-08 PDF

    Contextual Info: SPICE Device Model SiS454DN Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiS454DN 18-Jul-08 PDF

    S10-2445

    Contextual Info: SPICE Device Model SiB410DK Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiB410DK 18-Jul-08 S10-2445 PDF

    SIR164DP

    Abstract: A7282 65060 spice model 740
    Contextual Info: SPICE Device Model SiR164DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiR164DP 18-Jul-08 A7282 65060 spice model 740 PDF