MOSFET SOT-89 PACKAGE Search Results

CXDM4060P

Abstract: PB CXDM4060P MOSFET SMD MARKING CODE MOSFET marking smd SOT89 smd marking 13 sot-89 Marking LB pb sot89 mosfet
Contextual Info: Product Brief CXDM4060P 6.0A, 40V P-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET

CXDM1002N

Abstract: PB CXDM1002N sot-89 PF MOSFET SMD MARKING CODE 100V N-Channel MOSFET
Contextual Info: Product Brief CXDM1002N 2.0A, 100V N-Channel MOSFET in the SOT-89 package SOT-89 Typical Electrical Characteristics Central Semiconductor’s CXDM1002N is a 2.0 Amp, 100 Volt N-Channel enhancement-mode MOSFET, designed for motor control, DC-DC conversion and relay driver applications. This

GM3055

Abstract: GM-305 8A SOT89
Contextual Info: GM3055 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89

CHM6426XGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM6426XGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. SC-62/SOT-89

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM6426XPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE * Small package. SC-62/SOT-89

2070-P

Abstract: APM2070P APM2070PD BY 235
Contextual Info: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A , RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • Reliable and Rugged 1 2 3 G D S SOT-89 Package Top View of SOT-89 D Applications • Power Management in Notebook Computer ,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT06P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE  TO-252 SOT-89 The UT06P03 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

MOSFET SOT-89 package

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM3055LXPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE

Contextual Info: Power MOSFET transistors Power MOSFET transistors Features • available in the following packages — MPT3 SC-62, US/European SOT-89 — CPT F5 (SC-63, TO-252 D-PAK) — PSD(D2-PAK) • can be driven at 4 V, that is directly from an 1C, saving inclusion of buffer transistors on

CHM3055LXGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM3055LXGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 3.7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-62/SOT-89 FEATURE

LND150N8 equivalent

Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

Contextual Info: Advanced Power Electronics Corp. AP01N40G-HF-3 N-channel Enhancement-mode Power MOSFET Fast Switching Characteristics D Low Gate Charge Simple Drive Requirement G 100% Avalanche-tested RoHS-compliant, halogen-free SOT-89 package BV DSS 400V RDS ON 16Ω ID

N-Channel Depletion-Mode MOSFET high voltage

Contextual Info: LND150 inc. N-Channel Depletion-Mode MOSFET Ordering Informâtion Order Number / Package b v dsx/ ^DS ON •d s s BVdcx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£i 1.0mA LND150N3 LND150N8 LND150ND * Sam e as SOT-89 Features Advanced DMOS Technology □ ESD gate protection

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

MOSFET 818 ln

Contextual Info: LN D 1 E incN-Channel Depletion-Mode MOSFET Ordering Information B Vdsx / Order Number / Package f*DS OH '□(ON) b v dgx (max) (min) TO-92 TO-243AA* Die 500V 1.0K£2 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89 Features Advanced DMOS Technology 7! ESD gate protection

TS19451CY

Abstract: mosfet triggering circuit "coil capacitance" DC DC converter 50mA 400V WLED driver ext design of triggering circuit of mosfet TS19451 DC DC converter 400V lighting mosfet as switch circuit diagram in dc to dc DC DC converter 400V
Contextual Info: TS19451 AC/DC WLED Driver with Internal MOSFET Universal Switch Mode SOT-89 Pin Definition: 1. Drain 2. GND 3. VDD General Description The TS19451 is a PWM high efficiency LED driver control IC. It allows efficient operation of LED strings from voltage source ranging up to 400VDC. It includes an internal high voltage switching MOSFET controlled with fixed

RG611

Contextual Info: APM3195PD P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-2A, RDS ON =230mΩ(Typ.) @ VGS=-10V RDS(ON)=385mΩ(Typ.) @ VGS=-4.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM3054ND

Abstract: apm3054 sot89 MARKING 3C 48M025 APM3054N STD-020C
Contextual Info: APM3054ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/4A, RDS ON =48mΩ(typ.) @ VGS=10V RDS(ON)=75mΩ(typ.) @ VGS=4.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

apm2070

Contextual Info: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

SGM2305A

Abstract: p-channel mosfet sot89 5V SGM2305 2305a
Contextual Info: SGM2305A -3.2 A, -30 V, RDS ON 80 mΩ P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 A The SGM2305A provide the designer with best combination of fast switching,

Contextual Info: APM2070PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-3A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=70mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM2071

Abstract: sot-89 MARKING CODE 4A APM2071PD APM2071P STD-020C apm*2071 marking code IR SOT89
Contextual Info: APM2071PD P-Channel Enhancement Mode MOSFET Features • Pin Description -20V/-4A, RDS ON =50mΩ(typ.) @ VGS=-4.5V RDS(ON)=75mΩ(typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM3040ND

Abstract: STD-020C ED-7500 APM3040
Contextual Info: APM3040ND N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/3A, RDS ON =31mΩ(typ.) @ VGS=10V RDS(ON)=35mΩ(typ.) @ VGS=4.5V RDS(ON)=55mΩ(typ.) @ VGS=2.5V • • • Top View of SOT-89 Super High Dense Cell Design Reliable and Rugged