APM3195P Search Results

RG611

Contextual Info: APM3195PD P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-2A, RDS ON =230mΩ(Typ.) @ VGS=-10V RDS(ON)=385mΩ(Typ.) @ VGS=-4.5V • • • Super High Dense Cell Design Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

Contextual Info: APM3195PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-4A , RDS ON =100mΩ(typ.) @ VGS=-10V RDS(ON)=170mΩ(typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)

APM3195PD

Abstract: SOT89 mosfet 1E4 SOT-89
Contextual Info: APM3195PD P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-2A, RDS ON =230mΩ(Typ.) @ VGS=-10V G RDS(ON)=385mΩ(Typ.) @ VGS=-4.5V • • • D Super High Dense Cell Design S Top View of SOT-89 Reliable and Rugged Lead Free and Green Devices Available

APM3195PU

Contextual Info: APM3195PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-11.8A , RDS ON =100mΩ (typ.) @ VGS=-10V G RDS(ON)=170mΩ (typ.) @ VGS=-4.5V • • • Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free and Green Devices Available

IC tl 072

Abstract: APM3195PD STD-020C
Contextual Info: APM3195PD P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-2A, RDS ON =230mΩ(Typ.) @ VGS=-10V RDS(ON)=385mΩ(Typ.) @ VGS=-4.5V • • • G D Super High Dense Cell Design S Top View of SOT-89 Reliable and Rugged Lead Free Available (RoHS Compliant)

APM3195PU

Abstract: STD-020C 3V02
Contextual Info: APM3195PU P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-11.8A , RDS ON =100mΩ (typ.) @ VGS=-10V RDS(ON)=170mΩ (typ.) @ VGS=-4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)