MOSFET SN60 Search Results

LN9926

Contextual Info: LESHAN RADIO COMPANY, LTD. Dual N-Channel Enhancement-Mode MOSFET 20V, 6A LN9926LT1G 6 Description 5 This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a

Sn60Pb40

Abstract: SOIC-8 mosfet 993j st mosfet ST20A
Contextual Info: DESIGN TIP DT 99-3J International Rectifier • 233 Kansas Street El Segundo CA 90245 USA SO-8 MOSFETの手付けによるはんだ付け の手付けによるはんだ付け SO-8 MOSFETを手付けでプリント板（PCB）に はんだ付けする際はんだ付けが適切に行われな

quad N-Channel MOSFET dip package

Contextual Info: SHORT FORM CATALOG ADVANCED LINEAR DEVICES, INC. precision analog semiconductors Nano-Power • Standard & Unique Functions • User-Specified Options Small Signal MOSFET Arrays Operational Amplifiers EPAD Voltage Comparators Analog Switches CMOS Analog Timers

MOSFET TSSOP-8

Abstract: MOSFET TSSOP-8 dual n-channel H08N02CTS
Contextual Info: HI-SINCERITY Spec. No. : MOS200611 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4 MICROELECTRONICS CORP. H08N02CTS 8-Lead Plastic TSSOP-8 Package Code: TS Dual N-Channel Enhancement-Mode MOSFET 20V, 8A H08N02CTS Symbol & Pin Assignment

H6968CTS

Contextual Info: HI-SINCERITY Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : 2006.06.28 Page No. : 1/4 MICROELECTRONICS CORP. H6968CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6.5A (Battery Switch, ESD Protected) 8-Lead Plastic TSSOP-8 Package Code: TS

diode 47-6 H6

Abstract: H6968CTS ultra low idss
Contextual Info: HI-SINCERITY Spec. No. : MOS200610 Issued Date : 2006.06.01 Revised Date : 2006.02.25 Page No. : 1/4 MICROELECTRONICS CORP. H6968CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 7.0A (Battery Switch, ESD Protected) 8-Lead Plastic TSSOP-8 Package Code: TS

H9435S

Abstract: diode marking 91a marking CODE 91A h4435 91A MARKING
Contextual Info: HI-SINCERITY Spec. No. : MOS200101 Issued Date : 2008.01.12 Revised Date :2009.02.06 Page No. : 1/5 MICROELECTRONICS CORP. H4435S • P-Channel Enhancement-Mode MOSFET -30V, -9.1A) 8-Lead Plastic SO-8 Package Code: S H4435S Symbol & Pin Assignment Features

mosfet 2g2

Abstract: H9926CTS H9926TS mark 6A N-channel code TS
Contextual Info: HI-SINCERITY Spec. No. : MOS200513 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9926TS / H9926CTS Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H9926TS Symbol & Pin Assignment

H9435S

Contextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features

H12N60F

Abstract: H-10N h12n60 H10N60F mosfet p 30v 60a
Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/4 MICROELECTRONICS CORP. H12N60F H12N60F N-Channel Power MOSFET 600V,12A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching

Contextual Info: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.01.20 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H10N60F H10N60F N-Channel Power MOSFET 600V,10A Applications • Switch Mode Power Supply • Uninterruptable Power Supply • High Speed Power Switching

H9435S

Abstract: SO-8 V 052
Contextual Info: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2010.07.08 Page No. : 1/5 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment

H8205A

Abstract: *8205a H-8205A
Contextual Info: HI-SINCERITY Spec. No. : MOS200905 Issued Date : 2009.02.27 Revised Date : 2010.06.30 Page No. : 1/4 MICROELECTRONICS CORP. H8205A Dual N-Channel Enhancement-Mode MOSFET 20V, 6A 8-Lead Plastic TSSOP-8L Package Code: TS H8205A Symbol & Pin Assignment Description

H9435S

Contextual Info: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2008.12.04 Page No. : 1/4 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment

rf740

Abstract: HIRF740F HIRF740 mosfet 400V
Contextual Info: HI-SINCERITY Spec. No. : MOS200512 Issued Date : 2005.09.01 Revised Date : 2005.09.22 Page No. : 1/4 MICROELECTRONICS CORP. HIRF740 / HIRF740F HIRF740 Series Pin Assignment Tab N-Channel Power MOSFET 400V, 10A 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate

Marking G2

Abstract: S1 DIODE H6968CS H6968S G2 - 395
Contextual Info: HI-SINCERITY Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H6968S / H6968CS • Dual N-Channel Enhancement-Mode MOSFET 20V, 6.5A (Battery Switch, ESD Protected) 8-Lead Plastic SO-8 Package Code: S

HIRF730

Abstract: HIRF730F RF730
Contextual Info: HI-SINCERITY Spec. No. : MOS200406 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 MICROELECTRONICS CORP. HIRF730 / HIRF730F HIRF730 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain

MOSFET MARK y2

Abstract: MOSFET MARK H1 marking code k1 H01N60S marking A1 TRANSISTOR marking y1 mosfet k 61 y1 mosfet y1 PB40 H01N60SI
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2006.08.31 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

rf630

Abstract: HIRF630 HIRF630F
Contextual Info: HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain

MOSFET MARK y2

Abstract: H01N60S H01N60SI H01N60SJ MOSFET MARK H1 mosfet y1
Contextual Info: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60S Series N-Channel Power Field Effect Transistor H01N60S Series Pin Assignment Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to

BC237

Abstract: BC857A MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  BSS138LT1 Motorola Preferred Device N-Channel Enhancement Mode Logic Level SOT-23 MOSFET N–CHANNEL LOGIC LEVEL TMOS FET TRANSISTOR Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers,

RF830

Abstract: HIRF830 HIRF830F
Contextual Info: HI-SINCERITY Spec. No. : MOS200407 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 MICROELECTRONICS CORP. HIRF830 / HIRF830F HIRF830 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain

H50N03J

Abstract: MOSFET N 30V 30A 252
Contextual Info: HI-SINCERITY Spec. No. : MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5 MICROELECTRONICS CORP. H50N03J H50N03J Pin Assignment Tab N-Channel Enhancement-Mode MOSFET 25V, 50A 1 3 2 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate

MOSFET MARK y2

Abstract: H01N60I MOSFET MARK H1 H01N60 H01N60J TL 434 mosfet sn60
Contextual Info: HI-SINCERITY Spec. No. : MOS200502 Issued Date : 2005.03.01 Revised Date : 2005.09.28 Page No. : 1/5 MICROELECTRONICS CORP. H01N60 Series H01N60 Series Pin Assignment N-Channel Power Field Effect Transistor Tab Description 1 This high voltage MOSFET uses an advanced termination scheme to