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    MOSFET QG Search Results

    MOSFET QG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    AM9513ADIB
    Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    CA3130AT/B
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOSFET QG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    SW740

    Abstract: Samwin
    Contextual Info: SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics,


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    SW740 SW740 Samwin PDF

    Samwin* sw640

    Abstract: Samwin SW640
    Contextual Info: SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better


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    SW640 200nF 300nF Samwin* sw640 Samwin SW640 PDF

    Samwin

    Abstract: sw840
    Contextual Info: SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as


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    SW840 Samwin sw840 PDF

    SW50N06

    Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
    Contextual Info: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


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    SW50N06 023ohm SW50N06 Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent PDF

    20V P-Channel Power MOSFET

    Abstract: US6M2
    Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    PDF

    Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


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    US6M11 R0039A PDF

    IRFH7934TRPBF

    Contextual Info: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits


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    IRFH7934PbF 535mH, IRFH7934TRPBF PDF

    IRF Power MOSFET code marking

    Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
    Contextual Info: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l


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    6140A IRFH7932PbF 071mH, IRF Power MOSFET code marking 24v 12v 20A regulator IRFH7932pbF DM marking code PDF

    IC MOSFET QG

    Abstract: mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG
    Contextual Info: IC IC SMD Type N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET)


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    KI4300DY IC MOSFET QG mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG PDF

    Contextual Info: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l


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    IRFH7934PbF IRFH7934TRPBF 535mH, PDF

    Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


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    R0039A PDF

    Samwin sw830

    Abstract: SW830 Samwin CHMC 37
    Contextual Info: SAMWIN SW830 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,


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    SW830 Samwin sw830 SW830 Samwin CHMC 37 PDF

    Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


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    R0039A PDF

    Samwin

    Abstract: SW730 73WD
    Contextual Info: SAMWIN SW730 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,


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    SW730 Samwin SW730 73WD PDF

    Samwin

    Abstract: chmc SW634
    Contextual Info: SAMWIN SW634 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on


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    SW634 Samwin chmc SW634 PDF

    Si7962DP

    Contextual Info: Si7962DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg(Typ) 40 0.017 @ VGS = 10 V 11.1 46.2 D D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Package Dual MOSFET for Space Savings


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    Si7962DP Si7962DP-T1--E3 S-42058--Rev. 15-Nov-04 PDF

    Si2301CDS

    Abstract: SI2301CDS-T1-GE3 n1 marking 072b 27VDS
    Contextual Info: Si2301CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.112 at VGS = - 4.5 V - 3.1 0.142 at VGS = - 2.5 V - 2.7 VDS (V) - 20 • Halogen-free Option Available • TrenchFET Power MOSFET Qg (Typ.) RoHS


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    Si2301CDS O-236 OT-23) Si2301CDS-T1-E3 Si2301CDS-T1-GE3 18-Jul-08 n1 marking 072b 27VDS PDF

    Si2333CDS

    Contextual Info: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • TrenchFET Power MOSFET MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 Qg (Typ.) APPLICATIONS


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    Si2333CDS O-236 OT-23) Si2333CDS-T1-E3 18-Jul-08 PDF

    SI2351DS-T1-GE3

    Abstract: Si2351DS
    Contextual Info: Si2351DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 0.205 at VGS = - 2.5 V - 2.2 • • • • Qg (Typ.) 3.2 nC Halogen-free Option Available TrenchFET Power MOSFET


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    Si2351DS O-236 OT-23) Si2351DS-T1-E3 Si2351DS-T1-GE3 11-Mar-11 PDF

    Contextual Info: Si2351DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.115 at VGS = - 4.5 V - 3.0 0.205 at VGS = - 2.5 V - 2.2 • • • • Qg (Typ.) 3.2 nC Halogen-free Option Available TrenchFET Power MOSFET


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    Si2351DS O-236 OT-23) Si2351DS-T1-E3 Si2351DS-T1-GE3 25ded 08-Apr-05 PDF

    Si2303CDS

    Contextual Info: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.)


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    Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 08-Apr-05 PDF

    si4833a

    Abstract: SI4833ADY
    Contextual Info: Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A)a 0.072 at VGS = - 10 V - 4.6 0.110 at VGS = - 4.5 V - 3.4 Qg (Typ) • LITTLE FOOT Plus Power MOSFET RoHS - 4.6 COMPLIANT


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    Si4833ADY Si4833ADY-T1-E3 S-60428-Rev. 20-Mar-06 si4833a PDF

    Samwin

    Abstract: SW4N60 CHMC
    Contextual Info: SAMWIN SW4N60 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better


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    SW4N60 Samwin SW4N60 CHMC PDF