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    MOSFET QG Search Results

    MOSFET QG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    ICL7667MJA/883B
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) PDF Buy
    AM9513ADIB
    Rochester Electronics LLC AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 PDF Buy
    CA3130AT/B
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy

    MOSFET QG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


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    2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS PDF

    SW740

    Abstract: Samwin
    Contextual Info: SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics,


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    SW740 SW740 Samwin PDF

    Samwin* sw640

    Abstract: Samwin SW640
    Contextual Info: SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better


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    SW640 200nF 300nF Samwin* sw640 Samwin SW640 PDF

    Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    PDF

    Samwin

    Abstract: sw840
    Contextual Info: SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as


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    SW840 Samwin sw840 PDF

    SW50N06

    Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
    Contextual Info: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better


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    SW50N06 023ohm SW50N06 Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent PDF

    20V P-Channel Power MOSFET

    Abstract: US6M2
    Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.


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    PDF

    Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).


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    US6M11 R0039A PDF

    IRFH7934TRPBF

    Contextual Info: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits


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    IRFH7934PbF 535mH, IRFH7934TRPBF PDF

    QS6M4

    Contextual Info: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.


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    PDF

    Contextual Info: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l


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    6140A IRFH7932PbF 071mH, PDF

    Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS


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    IRFH7932PbF IRFH7932TRPbF IRFH7932TR2PbF IRFH7934PbF PDF

    Contextual Info: PD - 97336 IRFH7914PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 8.7mΩ@VGS = 10V 8.3nC Converters in Networking Systems Benefits


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    IRFH7914PbF PDF

    IRF Power MOSFET code marking

    Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
    Contextual Info: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l


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    6140A IRFH7932PbF 071mH, IRF Power MOSFET code marking 24v 12v 20A regulator IRFH7932pbF DM marking code PDF

    Contextual Info: PD - 96263 IRF8714GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS on max Qg Converters used for Notebook Processor Power 30V 8.7m @VGS = 10V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits


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    IRF8714GPbF IRF8714GPbF PDF

    Contextual Info: PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 150V 43m @VGS = 10V 25nC 1 8 S 2 7 S 3


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    IRF7815PbF 110mH, PDF

    Contextual Info: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3


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    IRF8734PbF 10irf PDF

    IC MOSFET QG

    Abstract: mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG
    Contextual Info: IC IC SMD Type N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET)


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    KI4300DY IC MOSFET QG mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG PDF

    Contextual Info: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l


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    IRFH7934PbF IRFH7934TRPBF 535mH, PDF

    Contextual Info: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l


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    -97337A IRFH7936PbF PDF

    Contextual Info: PD -97337 IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l l


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    IRFH7936PbF PDF

    IXYS

    Abstract: D600B
    Contextual Info: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement N-Channel Enhancement ModeMode Switch Mode RF MOSFET Low Qg and RZ-MOS g Low Capacitance TM MOSFET Process High for dv/dt Optimized RF Operation Nanosecond Ideal for Class C, D,Switching & E Applications


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    IXZR16N60 IXZR16N60A/B dsIXZR16N60 IXYS D600B PDF

    Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.


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    R0039A PDF

    4006E

    Contextual Info: PD - 97137 IRF8788PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l VDSS RDS on max Qg 30V 2.8m:@VGS = 10V 44nC Benefits l l l l l l l Very Low Gate Charge


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    IRF8788PbF IRF8788PbF onEIA-541. 4006E PDF