MOSFET QG Search Results

9n90c

Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
Contextual Info: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W

SW740

Abstract: Samwin
Contextual Info: SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics,

Samwin* sw640

Abstract: Samwin SW640
Contextual Info: SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better

Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

Samwin

Abstract: sw840
Contextual Info: SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as

SW50N06

Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
Contextual Info: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better

20V P-Channel Power MOSFET

Abstract: US6M2
Contextual Info: US6M2 Transistors 2.5V Drive Nch+Pch MOSFET US6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) High-speed switching, low On-resistance.

Contextual Info: 1.5V Drive Nch+Pch MOSFET US6M11 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm 0.2Max. TUMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive).

IRFH7934TRPBF

Contextual Info: PD -97151 IRFH7934PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits

QS6M4

Contextual Info: QS6M4 QS6M4 Transistors 2.5V Drive Nch+Pch MOSFET QS6M4 zDimensions Unit : mm zStructure Silicon P-channel MOSFET Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOSFET with a Nch MOSFET in a single TSMT6 package.

Contextual Info: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l

Contextual Info: IRFH7932PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems l l VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits Very low RDS(ON) at 4.5V VGS

Contextual Info: PD - 97336 IRFH7914PbF HEXFET Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS on max Qg 8.7mΩ@VGS = 10V 8.3nC Converters in Networking Systems Benefits

IRF Power MOSFET code marking

Abstract: 24v 12v 20A regulator IRFH7932pbF DM marking code
Contextual Info: PD - 96140A IRFH7932PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS 30V RDS on max Qg 3.3m @VGS = 10V 34nC : Benefits l l l l l

Contextual Info: PD - 96263 IRF8714GPbF Applications HEXFET Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS on max Qg Converters used for Notebook Processor Power 30V 8.7m @VGS = 10V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits

Contextual Info: PD - 96284 IRF7815PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 150V 43m @VGS = 10V 25nC 1 8 S 2 7 S 3

Contextual Info: PD - 96226 IRF8734PbF HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg (typ.) 30V 3.5m @VGS = 10V 20nC 1 8 S 2 7 S 3

IC MOSFET QG

Abstract: mosfet with schottky body diode mosfet Vds 30 Vgs 25 1A smd mosfet 10V Schottky Diode 78 DIODE SMD MOSFET QG
Contextual Info: IC IC SMD Type N-Channel 30-V D-S , Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET)

Contextual Info: IRFH7934PbF HEXFET Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS on max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l

Contextual Info: PD -97337A IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l

Contextual Info: PD -97337 IRFH7936PbF HEXFET Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS on max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l l

IXYS

Abstract: D600B
Contextual Info: IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement N-Channel Enhancement ModeMode Switch Mode RF MOSFET Low Qg and RZ-MOS g Low Capacitance TM MOSFET Process High for dv/dt Optimized RF Operation Nanosecond Ideal for Class C, D,Switching & E Applications

Contextual Info: 1.2V Drive Nch+Pch MOSFET EM6M2 zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET zDimensions Unit : mm EMT6 zFeatures 1) Nch MOSFET and Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode.

4006E

Contextual Info: PD - 97137 IRF8788PbF HEXFET Power MOSFET Applications Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l VDSS RDS on max Qg 30V 2.8m:@VGS = 10V 44nC Benefits l l l l l l l Very Low Gate Charge