Samwin
Abstract: SW4N60 CHMC
Contextual Info: SAMWIN SW4N60 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 600 V : 2.2 ohm : 4.0 A : 20 nc : 73 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better
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SW630
Abstract: Samwin* sw630 Samwin emosfet 2250u chmc
Contextual Info: SAMWIN SW630 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better
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Samwin sw830
Abstract: SW830 Samwin CHMC 37
Contextual Info: SAMWIN SW830 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,
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SW50N06
Abstract: Samwin* sw50n06 Samwin samwin sw50n06 CHMC sw50n chmc equivalent
Contextual Info: SAMWIN SW50N06 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better
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Samwin* sw640
Abstract: Samwin SW640
Contextual Info: SAMWIN SW640 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in SAMWIN with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better
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Samwin
Abstract: SW730 73WD
Contextual Info: SAMWIN SW730 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,
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SW740
Abstract: Samwin
Contextual Info: SAMWIN SW740 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe.This technology enable power MOSFET to have better characteristics,
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Samwin
Abstract: chmc SW634
Contextual Info: SAMWIN SW634 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on
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SW7N60
Abstract: Samwin
Contextual Info: SAMWIN SW7N60 Features General Description N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ℃) This power MOSFET is produced in CHMC with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better
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Samwin
Abstract: sw840
Contextual Info: SAMWIN SW840 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced with advanced VDMOS process, planar stripe. This technology enable power MOSFET to have better characteristics, such as
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SW2N60
Abstract: Samwin SW2N
Contextual Info: SAMWIN SW2N60 General Description Features zN-Channel MOSFET zBVDSS Minimum zRDS(ON) (Maximum) zID zQg (Typical) zPD (@TC=25 ℃) : 600 V : 5.0 ohm : 2.0 A : 16 nc : 50 W This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This
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SW6N70
Abstract: PCH477M6R3S1AGE08K 600V/SW6N70
Contextual Info: DN05073/D Design Note – DN05073/D Universal AC Input, 5.3V2A Output, 10.6 Watt Charger Device Application Input Voltage Output Power Topology I/O Isolation NCP1360BBCC NCP1360BCCC Mobile, tablet Charger, adapter 90 to 264 Vac 10.6W Quasi Resonant Flyback
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