MOSFET P 950 Search Results

Contextual Info: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage

Contextual Info: Si4965DY VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL Drain-Source Voltage L IM IT

Contextual Info: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET

Contextual Info: FQB34P10 P-Channel QFET MOSFET 100 V, -33.5 A, 60 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Contextual Info: Si6955DQ VISH A Y Siliconix Dual P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) r DS(ON) (//) Id (A) 0.085 @ VGS = —10 V ±2 .5 0.19 @ VGs = —4.5 V ±1 .8 -3 0 Si Q S2 Q Di d2 TSSOP-8 d2 Di Si s2 s2 Gi g2 Si Si6955DQ Top View P-Channel MOSFET P-Channel MOSFET

TO-253 SILICONIX

Contextual Info: SÌ6955DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET Vos (V) ^O S(O M } ( f i) lD (A) 0.085 @ V q S = -1 0 V -30 0.19 @ Vos = "4-5 V 2 Si s o Q TSSOP-8 3i O G2 i} It Top View Ô o, Ô d2 P-Channel MOSFET P-Channel MOSFET SYMBOL LIM IT Drain-Source Voltage

OM12P10SA

Abstract: OM12P10ST OM20P10SA OM20P10ST OM23P06SA OM23P06ST OM2P50ST OM8P20SA OM8P20ST OM8P25SA
Contextual Info: OM23P06ST OM20P10ST OM12P10ST OM8P20ST OM8P25ST OM2P50ST OM23P06SA OM20P10SA OM12P10SA OM8P20SA OM8P25SA OM2P50SA POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE, P-CHANNEL 60V To 500V P-Channel MOSFET In A Hermetic Package FEATURES • • • • • •

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3139KDW Dual P-Channel Power MOSFET SOT-363 GENERRAL DESCRIPTION This Dual P-Channel MOSFET has been designed using advanced Power Trench process to optimize the RDS ON .

Contextual Info: PRODUCT DATASHEET AAT4601A SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601A SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET

516MA

Abstract: SOP8 1251
Contextual Info: PRODUCT DATASHEET AAT4601 SmartSwitchTM 1.8A Current Limited P-Channel Switch General Description Features The AAT4601 SmartSwitch is a member of AnalogicTech’s Application Specific Power MOSFET ASPM™ product family. It is a 1.8A current limited P-channel MOSFET

semiconductor body marking

Contextual Info: CTLDM8120-M563 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120-M563 is a high quality, enhancement-mode P-channel MOSFET packaged in a space saving 1.6 x 1.6mm TLMTM surface mount package. This

JESD51-5

Abstract: JESD51-7 CTLDM8120-M621H TLM621H
Contextual Info: Central CTLDM8120-M621H TM SURFACE MOUNT TLM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM8120-M621H is a very low profile 0.4mm P-Channel enhancement-mode MOSFET in a small, thermally efficient, 1.5mm x 2mm TLM package.

Contextual Info: SUD/SUU10P06-280L VISH A Y Siliconix P-Ch 60-V D-S , 175°C MOSFET, Logic Level New Product Top View Order Number: SUD10P06-280L P-Channel MOSFET Order Number: SUU10P06-280L ABSOLUTE MAXIMUM RATINGS (Tc = 25 C UNLESS OTHERWISE NOTED) PARAM ETER Gate-Source Voltage

Contextual Info: SÌ6965DQ Vishay Siliconix P-Channel 2.5-V G-S Battery Switch New Product Ros{on) (f ì ) I d (AJ 0.035 @ VGs = -4 -5 V ±5 .0 0.060 @ VGS = -2 .5 V ±3.9 vos m -2 0 TSSOP-8 Top View P-Channel MOSFET P-Channel MOSFET • m ■ ■ ■ ■ ■ ■ 1 SYMBOL

Contextual Info: Si9407AEY VISHAY Siliconix P-Channel 60-V D-S , 175°C MOSFET New Product Product Summary VDS(V) rDS(on) (£2) -60 0.120 @VGs = -10 V 0.15 @ Ygs = ^1.5 V Id (A) ±3.5 ±3.1 Vv^V°sf6ls P 0- >N e t s s s SO-8 D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25°C Unless Otherwise Noted)

P channel MOSFET 10A

Abstract: P channel MOSFET 10A schematic LPT-4545-A002 UU100 LTC1266-3.3 919AS-4R7M LTC1266 MBR0530T1 MBRS130LT3 Si9410
Contextual Info: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout

Contextual Info: LTC1266 LTC1266-3.3/LTC1266-5 Synchronous Regulator Controller for N- or P-Channel MOSFETs FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Ultrahigh Efficiency: Over 95% Possible Drives N-Channel MOSFET for High Current or P-Channel MOSFET for Low Dropout

IRLML6402

Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
Contextual Info: PD - 93755B IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

AN-994

Abstract: EIA-541
Contextual Info: PD - 95060B IRLML6402PbF l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free HEXFET Power MOSFET D VDSS = -20V G RDS(on) = 0.065Ω S Description

irlml2402

Abstract: IRLML5203 irlml5203 H IRLML6302
Contextual Info: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier

2U 73 diode

Abstract: siliconix
Contextual Info: SÌ6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SU M M AR v V d s CV) RDS(OM) (ß ) Id là) 0,019 @ VGS = - 1 0 V ±6.5 0.030 @ V gs = -4 .5 V ±5.2 -3 0 S* P TSSOP-8 * Source Pins 2, 3, 6 and 7 must be tied common. Top View ò D P-Channel MOSFET

amplifier marking code a c8g

Abstract: CMLDM8120 C81 diode
Contextual Info: Central CMLDM8120 CMLDM8120G* SURFACE MOUNT PICOminiTM P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are Enhancement-mode P-Channel Field Effect Transistors, manufactured by the P-Channel DMOS Process,

Bi-Directional P-Channel mosfet

Contextual Info: _ Si3801 DV Vishay Siliconix Bi-Directional P-Channel MOSFET/Battery Switch New Product V* on R s s o m (Q ) 1» (A ) 0.220 O V GS = -4 .5 V ± 2 .3 0.400 @ V 3S = -2 .5 V ± 1 .7 A -1 2 FEATURES Low rss(on) Symmetrical P-Channel MOSFET

SUD45P03-15

Contextual Info: SUD45P03-15 Siliconix P-Channel 30-V D-S , 150_C MOSFET Product Summary rDS(on) (W) ID (A)a 0.015 @ VGS = –10 V "13 0.024 @ VGS = –4.5 V "8 VDS (V) –30 30 S TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD45P03-15 D P-Channel MOSFET