MOSFET N-CH 200V Search Results

Contextual Info: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns FMP26-02P VDSS 43 ID25 T1 5 34 T2 (Electrically Isolated Tab) 11 22 Symbol Test Conditions

Contextual Info: Preliminary Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 (Electrically Isolated Tab) T2 11 22 Symbol Test Conditions

FMP26-02P

Abstract: IXYS Class D Switching Amplifiers
Contextual Info: Advance Technical Information PolarTM P & N-Channel Power MOSFET Common Drain Topology FMP26-02P P CH. N CH. - 200V 200V - 17A 26A RDS on 170mΩ Ω 60mΩ Ω trr(typ) 240ns 150ns VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings

Contextual Info: SMN09L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=9nC (Typ.)  Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)  100% avalanche tested  RoHS compliant device

04l20

Contextual Info: SMN04L20IS Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device

Contextual Info: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device

Contextual Info: SMN04L20D Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.)  100% avalanche tested  RoHS compliant device

SMN630L

Contextual Info: SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • Drain-Source breakdown voltage: BVDSS=200V Min.  Low gate charge: Qg=12nC (Typ.)  Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)  100% avalanche tested  RoHS compliant device

SMN01L20

Contextual Info: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information Part Number

IS085

Contextual Info: SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features • 0.85A, 200V, RDS on =1.35Ω @ VGS=10V  Low gate charge: Qg=4nC (Typ.)  Fast switching  100% avalanche tested  RoHS compliant device D G Ordering Information D S Part Number

Contextual Info: IRL620A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level G ate Drive 0.8Q > cn Rugged G ate O xide T e ch n o lo g y a ♦ II ^D S o n = ♦ A va la n ch e Rugged T e ch n o lo g y ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge

T518

Contextual Info: IRL620 A d van ced Power MOSFET FEATURES 200 V 0.8Q > Rugged G ate O xide T e ch n o lo g y cn ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge

Contextual Info: IRL630 A d v a n c e d Power MOSFET FEATURES 200 V 0.4Q > Rugged G ate O xide T e ch n o lo g y CO ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge

SSD20N20-125D

Abstract: MosFET MOSFET N-CH 200V
Contextual Info: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

diode smd 1D

Contextual Info: Provisional Data Sheet No. PD-9.1554A International IQ R Rectifier HEXFET POWER MOSFET IRFN9240 P-CH A N N EL -200 Volt, 0.51 £2 HEXFET Product Summary H E X F E T te c h n o lo g y is th e key to In te rn a tio n a l Rectifier’s advanced line of power MOSFET transis­

Contextual Info: IRFS250A Advanced Power MOSFET FEATURES BV dss = 200 V • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^DS on = 0.085 £2 lD = 21.3 A ■ E xtended S afe O pe ra ting A rea

SSD14N25-280D

Abstract: MosFET
Contextual Info: SSD14N25-280D 10.9A , 250V , RDS ON 280mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)

SMK1820

Abstract: marking code MJ Marking Code 18A TO-220F-3
Contextual Info: SMK1820FJ Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) : RDS(on)=0.17Ω(Max.) D G Ordering Information

Contextual Info: SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage: BVDSS=200V Min. Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17 (Max.)

SMK630

Contextual Info: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

smk 630

Abstract: SMK630D SMK630 mosfet 45a 200v SMK630 TO-252
Contextual Info: SMK630D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

SMK1820

Abstract: SMK1820D mosfet VDS 30V ID 18A TO 252 mosfet 30V 18A TO 252
Contextual Info: SMK1820D Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage: BVDSS=200V Min. Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) :RDS(on)=0.17Ω(Max.)

Contextual Info: SMN09L20D Advanced LOGIC N-Ch MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features •    PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=17pF(Typ.) Low gate charge : Qg=9nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)

SMK630

Abstract: mosfet 45a 200v
Contextual Info: SMK630F Advanced N-Ch Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=200V Min. Low Crss : Crss=24pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.)